Growth and Characterization of InAsxP1−x/InP Strained Multiple Quantum Wells by Gas Source Molecular Beam Expitaxy

1996 ◽  
Vol 450 ◽  
Author(s):  
H. C. Kuo ◽  
S. Thomas ◽  
A. P. Curtis ◽  
G. E. Stillman ◽  
C. H. Lin ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Molecular Beam ◽  
Interband Transition ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
Misfit Dislocations ◽  
Double Crystal ◽  
Cross Sectional ◽  
Transition Energies ◽  
Gas Source

AbstractInAsxPi.x/InP (10 period 50/100Å with x=0.25–0.79) pseudomorphically strained multiple quantum wells (SMQWs) were grown by gas source molecular beam expitaxy (GSMBE) at 470°C and characterized by cross-sectional transmission electron microscope (XTEM), double crystal x-ray diffraction (DCXRD), and optical spectroscopy. The structural analysis demonstrates that excellent control of the sharp interface and limited As-P interdiffusion can be achieved by GSMBE growth. XTEM images of these SMQWs display no misfit dislocations, and DCXRD scans reveal high order superlattice satellite peaks. Photoluminescence (PL) and transmission measurements were performed for all SMQWs to evaluate crystal quality. Only slight degradation in luminescence was observed as the As composition increased. Based on the three-band Kane model which includes the lattice strain, the transition energies of SMQWs were calculated using the conduction-band offset (Qc=δEc/δEg) as an adjustable parameter. The best fit of measured and calculated interband transition energies suggests that Qc is independent of As composition and is 0.70±0.05. Finally, a growth kinetics model based on the Langmuir equation was derived to realize the As/P incorporation ratio in the InAsP materials. Theoretical results show good agreement with experimental data.

Photoluminescence investigation of GaInP/GaAs multiple quantum wells grown on (001) and (311) B GaAs surfaces by gas source molecular beam epitaxy

1998 ◽  
Vol 83 (12) ◽  
pp. 7900-7902 ◽  
Author(s):  
Xiaobing Li ◽  
Dianzhao Sun ◽  
Jianrong Dong ◽  
Jianping Li ◽  
Meiying Kong ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Quantum Wells ◽  
Molecular Beam ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
Gas Source

Strain-Compensation in InAsP/GaInP Multiple Quantum Wells for 1.3 μm Wavelength

1995 ◽  
Vol 379 ◽  
Author(s):  
X. B. Mei ◽  
C.W. Tu
Keyword(s):  
Quantum Wells ◽  
Lattice Mismatch ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
X Ray Diffraction ◽  
Double Crystal ◽  
Narrow Line Width ◽  
Gas Source ◽  
Wide Range ◽  
Strain Compensation

ABSTRACTWe show that high-quality strain-compensated InAsxP1−x/GayIn1−yP multiple quantum wells (MQWs) can be grown by gas-source molecular beam epitaxy on InP substrates even though the InAsxP1−x quantum wells have a large lattice mismatch (∼ 1.3%) with respect to InP. Very sharp satellite peaks in double-crystal X-ray diffraction and narrow line width in low-temperature photoluminescence (FWHM of 4 meV at 9 K) are obtained from MQWs of up to 50 periods. Strain compensation allows a wide range of the net strain around the ideally compensated point, where the net strain equals zero, without degrading crystalline quality.

Interface optimization of multiple quantum wells grown by gas source molecular beam epitaxy

1996 ◽  
Vol 158 (4) ◽  
pp. 393-398 ◽  
Author(s):  
J.M. Kuo ◽  
H.C. Kuo ◽  
J.Y. Cheng ◽  
Y.C. Wang ◽  
Y. Lu ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Quantum Wells ◽  
Molecular Beam ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
Gas Source
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