Determination of transition energies and oscillator strengths in GaAs-AlxGa1−xAs multiple quantum wells using photovoltage-induced photocurrent spectroscopy

1987 ◽  
Vol 35 (17) ◽  
pp. 9250-9258 ◽  
Author(s):  
P. W. Yu ◽  
G. D. Sanders ◽  
D. C. Reynolds ◽  
K. K. Bajaj ◽  
C. W. Litton ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Oscillator Strengths ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
Transition Energies ◽  
Photocurrent Spectroscopy

Piezoelectric-field effects on transition energies, oscillator strengths, and level widths in (111)B-grown (In,Ga)As/GaAs multiple quantum wells

1993 ◽  
Vol 48 (11) ◽  
pp. 8491-8494 ◽  
Author(s):  
R. A. Hogg ◽  
T. A. Fisher ◽  
A. R. K. Willcox ◽  
D. M. Whittaker ◽  
M. S. Skolnick ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Oscillator Strengths ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
Transition Energies ◽  
Field Effects ◽  
Piezoelectric Field

Spectroscopic determination of the band offset in CdTe/Cd1-xMnxTe multiple quantum wells grown on InSb substrates

1990 ◽  
Vol 101 (1-4) ◽  
pp. 594-598 ◽  
Author(s):  
T.J. Gregory ◽  
C.P. Hilton ◽  
J.E. Nicholls ◽  
W.E. Hagston ◽  
J.J. Davies ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Multiple Quantum Wells ◽  
Spectroscopic Determination ◽  
Band Offset ◽  
Multiple Quantum

Determination of the band offset of CdTe/Cd1−xMnxTe multiple quantum wells with very lowxvalues

1995 ◽  
Vol 52 (7) ◽  
pp. 4732-4735 ◽  
Author(s):  
P. Chen ◽  
J. E. Nicholls ◽  
J. H. C. Hogg ◽  
T. Stirner ◽  
W. E. Hagston ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Multiple Quantum Wells ◽  
Band Offset ◽  
Multiple Quantum

Photocurrent spectroscopy of ZnCdSe/ZnSe multiple quantum wells

1994 ◽  
Vol 16 (4) ◽  
pp. 363-365 ◽  
Author(s):  
R. Cingolani ◽  
M. De Vittorio ◽  
M. Di Dio ◽  
M. Lomascolo ◽  
A. Cola ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
Photocurrent Spectroscopy

Strain field and chemical composition determination of InGaN/GaN and AlGaN/GaN multiple quantum wells grown on SiC substrates

2002 ◽  
Vol 92 (1) ◽  
pp. 70-76 ◽  
Author(s):  
M. A. Tagliente ◽  
L. De Caro ◽  
L. Tapfer ◽  
P. Waltereit ◽  
O. Brandt ◽  
...  
Keyword(s):  
Chemical Composition ◽  
Quantum Wells ◽  
Strain Field ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
Composition Determination

Determination of the Optical Properties of AlGaAs/GaAs Multiple Quantum Wells by Using Power-dependent Photoluminescence

2014 ◽  
Vol 64 (2) ◽  
pp. 121-125
Author(s):  
Janghyun CHO ◽  
Yong-Sub JUNG ◽  
Clare Chisu BYEON* ◽  
Jin Dong SONG ◽  
 Eun Hye LEE
Keyword(s):  
Optical Properties ◽  
Quantum Wells ◽  
Multiple Quantum Wells ◽  
Multiple Quantum

Growth and Characterization of InAsxP1−x/InP Strained Multiple Quantum Wells by Gas Source Molecular Beam Expitaxy

1996 ◽  
Vol 450 ◽  
Author(s):  
H. C. Kuo ◽  
S. Thomas ◽  
A. P. Curtis ◽  
G. E. Stillman ◽  
C. H. Lin ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Molecular Beam ◽  
Interband Transition ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
Misfit Dislocations ◽  
Double Crystal ◽  
Cross Sectional ◽  
Transition Energies ◽  
Gas Source

AbstractInAsxPi.x/InP (10 period 50/100Å with x=0.25–0.79) pseudomorphically strained multiple quantum wells (SMQWs) were grown by gas source molecular beam expitaxy (GSMBE) at 470°C and characterized by cross-sectional transmission electron microscope (XTEM), double crystal x-ray diffraction (DCXRD), and optical spectroscopy. The structural analysis demonstrates that excellent control of the sharp interface and limited As-P interdiffusion can be achieved by GSMBE growth. XTEM images of these SMQWs display no misfit dislocations, and DCXRD scans reveal high order superlattice satellite peaks. Photoluminescence (PL) and transmission measurements were performed for all SMQWs to evaluate crystal quality. Only slight degradation in luminescence was observed as the As composition increased. Based on the three-band Kane model which includes the lattice strain, the transition energies of SMQWs were calculated using the conduction-band offset (Qc=δEc/δEg) as an adjustable parameter. The best fit of measured and calculated interband transition energies suggests that Qc is independent of As composition and is 0.70±0.05. Finally, a growth kinetics model based on the Langmuir equation was derived to realize the As/P incorporation ratio in the InAsP materials. Theoretical results show good agreement with experimental data.

Determination of absolute indium content in InGaN/GaN multiple quantum wells using anomalous x-ray scattering

2002 ◽  
Vol 81 (27) ◽  
pp. 5120-5122 ◽  
Author(s):  
H. H. Lee ◽  
M. S. Yi ◽  
H. W. Jang ◽  
Y.-T. Moon ◽  
S.-J. Park ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Indium Content ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
X Ray ◽  
X Ray Scattering ◽  
Ray Scattering
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