Soft-x-ray photoemission study of chemisorption and Fermi-level pinning at the Cs/GaAs(110) and K/GaAs(110) interfaces

1988 ◽  
Vol 38 (11) ◽  
pp. 7568-7575 ◽  
Author(s):  
T. Kendelewicz ◽  
P. Soukiassian ◽  
M. H. Bakshi ◽  
Z. Hurych ◽  
I. Lindau ◽  
...  
Keyword(s):  
Fermi Level ◽  
X Ray ◽  
Fermi Level Pinning ◽  
Photoemission Study

Photoemission study of chemisorption and Fermi-level pinning at K/GaAs(100) interface with synchrotron radiation

2005 ◽  
Vol 249 (1-4) ◽  
pp. 340-345 ◽  
Author(s):  
M.H. Sun ◽  
T.X. Zhao ◽  
C.Y. Jia ◽  
P.S. Xu ◽  
E.D. Lu ◽  
...  
Keyword(s):  
Synchrotron Radiation ◽  
Fermi Level ◽  
Fermi Level Pinning ◽  
Photoemission Study

Interaction of Thin Ga Overlayer with InP(110): a Photoemission Study

1988 ◽  
Vol 143 ◽  
Author(s):  
R. Cao ◽  
K. Miyano ◽  
T. Kendelewicz ◽  
I. Lindau ◽  
W. E. Spicer
Keyword(s):  
Low Temperature ◽  
Fermi Level ◽  
Temperature Dependence ◽  
Room Temperature ◽  
Replacement Reaction ◽  
High Coverage ◽  
Fermi Level Pinning ◽  
Different Temperatures ◽  
Photoemission Study ◽  
Low Coverage

AbstractPhotoemission study of the Ga/InP(110) interface, in particular at the In 4d cooper minimum (CM) reveals that the growth of the deposited Ga on InP(110) at room temperature (RT) has two modes: chemisorption at low coverage and metallic island formation at high coverage, whereas the Ga overlayer is much more uniform at 80K low temperature (LT). A replacement reaction between Ga and InP is found to take place only underneath the Ga islands. Metal screening from the Ga islands is suggested to weaken the substrate bonds and enhance the replacement reaction. Distinct behavior of Fermi level pinning has been observed at different temperatures. This is correlated with the temperature dependence of the overlayer morphology as well as the interfacial reaction.

Fermi-level pinning at the interface between metals and nitrogen-doped Ge2Sb2Te5 examined by x-ray photoelectron spectroscopy

2009 ◽  
Vol 95 (19) ◽  
pp. 192109 ◽  
Author(s):  
Lina Wei-Wei Fang ◽  
Rong Zhao ◽  
Jisheng Pan ◽  
Zheng Zhang ◽  
Luping Shi ◽  
...  
Keyword(s):  
Fermi Level ◽  
Photoelectron Spectroscopy ◽  
X Ray ◽  
Nitrogen Doped ◽  
Fermi Level Pinning

X-Ray Photoemission Study of SiO2/Si/Si0.55Ge0.45/Si Heterostructures

2013 ◽  
Vol E96.C (5) ◽  
pp. 680-685 ◽  
Author(s):  
Akio OHTA ◽  
Katsunori MAKIHARA ◽  
Seiichi MIYAZAKI ◽  
Masao SAKURABA ◽  
Junichi MUROTA
Keyword(s):  
X Ray ◽  
Photoemission Study

Fermi level pinning and band bending in δ-doped BaSnO3

2021 ◽  
Vol 118 (5) ◽  
pp. 052101
Author(s):  
Youjung Kim ◽  
Hyeongmin Cho ◽  
Kookrin Char
Keyword(s):  
Fermi Level ◽  
Band Bending ◽  
Fermi Level Pinning

Fermi‐Level Pinning Free High‐Performance 2D CMOS Inverter Fabricated with Van Der Waals Bottom Contacts

2021 ◽  
pp. 2001212
Author(s):  
Tien Dat Ngo ◽  
Zheng Yang ◽  
Myeongjin Lee ◽  
Fida Ali ◽  
Inyong Moon ◽  
...  
Keyword(s):  
Fermi Level ◽  
High Performance ◽  
Van Der Waals ◽  
Cmos Inverter ◽  
Fermi Level Pinning
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