Photoemission study of chemisorption and Fermi-level pinning at K/GaAs(100) interface with synchrotron radiation

2005 ◽  
Vol 249 (1-4) ◽  
pp. 340-345 ◽  
Author(s):  
M.H. Sun ◽  
T.X. Zhao ◽  
C.Y. Jia ◽  
P.S. Xu ◽  
E.D. Lu ◽  
...  
Keyword(s):  
Synchrotron Radiation ◽  
Fermi Level ◽  
Fermi Level Pinning ◽  
Photoemission Study

Photoemission Study of the α-Sn/Cdte(110) Interface Growth

1987 ◽  
Vol 94 ◽  
Author(s):  
Ming Tang ◽  
David W. Niles ◽  
Isaac Hernández-Calderón ◽  
Hartmut Hóchst
Keyword(s):  
Synchrotron Radiation ◽  
Fermi Level ◽  
Valence Band ◽  
Valence Band Maximum ◽  
Photoemission Spectroscopy ◽  
Mbe Growth ◽  
Band Maximum ◽  
Interface Growth ◽  
Interfacial Growth ◽  
Photoemission Study

ABSTRACTAngular Resolved Photoemission Spectroscopy with Synchrotron radiation has been used to study the MBE growth of α-Sn on CdTe(110). Sn grows epitaxially and the Fermi level pins at 0.72eV above the CdTe valence band maximum. Outdiffusion or segregation of Cd in the α-Sn layer is not observed. For small Sn coverages the Sn4d core spectra show a second component which may be due to the initial interfacial growth of SnTe.

Soft-x-ray photoemission study of chemisorption and Fermi-level pinning at the Cs/GaAs(110) and K/GaAs(110) interfaces

1988 ◽  
Vol 38 (11) ◽  
pp. 7568-7575 ◽  
Author(s):  
T. Kendelewicz ◽  
P. Soukiassian ◽  
M. H. Bakshi ◽  
Z. Hurych ◽  
I. Lindau ◽  
...  
Keyword(s):  
Fermi Level ◽  
X Ray ◽  
Fermi Level Pinning ◽  
Photoemission Study

Interaction of Thin Ga Overlayer with InP(110): a Photoemission Study

1988 ◽  
Vol 143 ◽  
Author(s):  
R. Cao ◽  
K. Miyano ◽  
T. Kendelewicz ◽  
I. Lindau ◽  
W. E. Spicer
Keyword(s):  
Low Temperature ◽  
Fermi Level ◽  
Temperature Dependence ◽  
Room Temperature ◽  
Replacement Reaction ◽  
High Coverage ◽  
Fermi Level Pinning ◽  
Different Temperatures ◽  
Photoemission Study ◽  
Low Coverage

AbstractPhotoemission study of the Ga/InP(110) interface, in particular at the In 4d cooper minimum (CM) reveals that the growth of the deposited Ga on InP(110) at room temperature (RT) has two modes: chemisorption at low coverage and metallic island formation at high coverage, whereas the Ga overlayer is much more uniform at 80K low temperature (LT). A replacement reaction between Ga and InP is found to take place only underneath the Ga islands. Metal screening from the Ga islands is suggested to weaken the substrate bonds and enhance the replacement reaction. Distinct behavior of Fermi level pinning has been observed at different temperatures. This is correlated with the temperature dependence of the overlayer morphology as well as the interfacial reaction.

Fermi level pinning and band bending in δ-doped BaSnO3

2021 ◽  
Vol 118 (5) ◽  
pp. 052101
Author(s):  
Youjung Kim ◽  
Hyeongmin Cho ◽  
Kookrin Char
Keyword(s):  
Fermi Level ◽  
Band Bending ◽  
Fermi Level Pinning

Fermi‐Level Pinning Free High‐Performance 2D CMOS Inverter Fabricated with Van Der Waals Bottom Contacts

2021 ◽  
pp. 2001212
Author(s):  
Tien Dat Ngo ◽  
Zheng Yang ◽  
Myeongjin Lee ◽  
Fida Ali ◽  
Inyong Moon ◽  
...  
Keyword(s):  
Fermi Level ◽  
High Performance ◽  
Van Der Waals ◽  
Cmos Inverter ◽  
Fermi Level Pinning

scholarly journals Defect Dominated Charge Transport and Fermi Level Pinning in MoS2/Metal Contacts

2017 ◽  
Vol 9 (22) ◽  
pp. 19278-19286 ◽  
Author(s):  
Pantelis Bampoulis ◽  
Rik van Bremen ◽  
Qirong Yao ◽  
Bene Poelsema ◽  
Harold J. W. Zandvliet ◽  
...  
Keyword(s):  
Fermi Level ◽  
Charge Transport ◽  
Metal Contacts ◽  
Fermi Level Pinning

Metal silicide Schottky barriers on Si and Ge show weaker Fermi level pinning

2012 ◽  
Vol 101 (5) ◽  
pp. 052110 ◽  
Author(s):  
L. Lin ◽  
Y. Guo ◽  
J. Robertson
Keyword(s):  
Fermi Level ◽  
Schottky Barriers ◽  
Metal Silicide ◽  
Fermi Level Pinning

Synchrotron-radiation photoemission study of Ba on W(110)

1998 ◽  
Vol 58 (7) ◽  
pp. 4149-4155 ◽  
Author(s):  
Tun-Wen Pi ◽  
Ie-Hong Hong ◽  
Chiu-Ping Cheng
Keyword(s):  
Synchrotron Radiation ◽  
Photoemission Study ◽  
Synchrotron Radiation Photoemission

Fermi level pinning in low‐temperature molecular beam epitaxial GaAs

1992 ◽  
Vol 61 (13) ◽  
pp. 1585-1587 ◽  
Author(s):  
H. Shen ◽  
F. C. Rong ◽  
R. Lux ◽  
J. Pamulapati ◽  
M. Taysing‐Lara ◽  
...  
Keyword(s):  
Low Temperature ◽  
Fermi Level ◽  
Molecular Beam ◽  
Epitaxial Gaas ◽  
Fermi Level Pinning ◽  
Molecular Beam Epitaxial
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