16th IPRM. 2004 International Conference on Indium Phosphide and Related Materials, 2004.
Latest Publications

TOTAL DOCUMENTS

220

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Published By IEEE

0780385950

Latest Documents Most Cited Documents Contributed Authors Related Sources Related Keywords

Buffer optimization for INP-ON-SI [001] quasi-substrates

16th IPRM. 2004 International Conference on Indium Phosphide and Related Materials, 2004. ◽

10.1109/iciprm.2004.1442625 ◽

2005 ◽

Cited By ~ 1

Author(s):

V. Khorenko ◽

A.C. Mofor ◽

A. Bakin ◽

S. Neumann ◽

A. Guttzeit ◽

...

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2 μm InAsSb quantum-dot lasers

16th IPRM. 2004 International Conference on Indium Phosphide and Related Materials, 2004. ◽

10.1109/iciprm.2004.1442820 ◽

2005 ◽

Author(s):

Yuemmg Qiu ◽

D. Uhl ◽

S. Keo

Keyword(s):

Quantum Dot ◽

Quantum Dot Lasers

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InP-based IC technologies for 100-Gbit/s and beyond

16th IPRM. 2004 International Conference on Indium Phosphide and Related Materials, 2004. ◽

10.1109/iciprm.2004.1442599 ◽

2005 ◽

Cited By ~ 5

Author(s):

K. Murata ◽

K. Sano ◽

T. Enoki ◽

H. Sugahara ◽

M. Tokumitsu

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Design and operation of uncooled 10 GB/S, 1310 NM electroabsorption modulated lasers

16th IPRM. 2004 International Conference on Indium Phosphide and Related Materials, 2004. ◽

10.1109/iciprm.2004.1442789 ◽

2005 ◽

Cited By ~ 3

Author(s):

M.R. Gokhale ◽

P.V. Studerikov ◽

J. Ueng-McHale ◽

J. Thomson ◽

K. Yogeeswaran ◽

...

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High power CW-DFB-LD with a novel non-integer order grating structure

16th IPRM. 2004 International Conference on Indium Phosphide and Related Materials, 2004. ◽

10.1109/iciprm.2004.1442770 ◽

2005 ◽

Author(s):

K. Takaki ◽

M. Funabashi ◽

A. Kasukawa

Keyword(s):

High Power ◽

Integer Order ◽

Grating Structure

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The effect of current annealing for GaInNAs/GaAs laser grown by metalorganic chemical vapor deposition

16th IPRM. 2004 International Conference on Indium Phosphide and Related Materials, 2004. ◽

10.1109/iciprm.2004.1442610 ◽

2005 ◽

Author(s):

A. Saito ◽

T. Miyamoto ◽

M. Kawaguchi ◽

F. Koyama

Keyword(s):

Chemical Vapor Deposition ◽

Vapor Deposition ◽

Metalorganic Chemical Vapor Deposition ◽

Chemical Vapor ◽

Gaas Laser ◽

Current Annealing ◽

Metalorganic Chemical

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Improvement of optical flip-flop characteristics of compact directionally coupled bistable laser diode

16th IPRM. 2004 International Conference on Indium Phosphide and Related Materials, 2004. ◽

10.1109/iciprm.2004.1442772 ◽

2005 ◽

Author(s):

M. Takenaka ◽

M. Raburn ◽

Y. Nakano

Keyword(s):

Laser Diode ◽

Flip Flop ◽

Bistable Laser Diode

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Monolithic integration of InGaAs/InAlGaAs-based semiconductor optical amplifiers and 10 Gb/s broadband electro-absorption modulators using quantum well intermixing technology

16th IPRM. 2004 International Conference on Indium Phosphide and Related Materials, 2004. ◽

10.1109/iciprm.2004.1442741 ◽

2005 ◽

Author(s):

S.D. McDougall ◽

B.C. Qiu ◽

G. Ternent ◽

D.A. Yanson ◽

V. Loyo-Maldonado ◽

...

Keyword(s):

Quantum Well ◽

Optical Amplifiers ◽

Semiconductor Optical Amplifiers ◽

Monolithic Integration ◽

Quantum Well Intermixing

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Mechanical stress caused by adsorption of O or N on a ga-terminated [100] GaAs surface: O gives compressive stress but N don't

16th IPRM. 2004 International Conference on Indium Phosphide and Related Materials, 2004. ◽

10.1109/iciprm.2004.1442638 ◽

2005 ◽

Cited By ~ 1

Author(s):

H. Seto ◽

S. Miyamura ◽

T. Inokuma ◽

K. Ilyama ◽

S. Takamiya

Keyword(s):

Mechanical Stress ◽

Compressive Stress ◽

Gaas Surface

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Improved transconductance N-channel enhancement/inversion mode GaAs-MISFETs with gate insulating layers formed by dry oxi-nitridation

16th IPRM. 2004 International Conference on Indium Phosphide and Related Materials, 2004. ◽

10.1109/iciprm.2004.1442642 ◽

2005 ◽

Cited By ~ 2

Author(s):

M. Tametou ◽

M. Takebe ◽

K. Nakamura ◽

N.C. Paul ◽

K. Iiyama ◽

...

Keyword(s):

Inversion Mode

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16th IPRM. 2004 International Conference on Indium Phosphide and Related Materials, 2004.Latest Publications

TOTAL DOCUMENTS

H-INDEX

Published By IEEE

Buffer optimization for INP-ON-SI [001] quasi-substrates

2 μm InAsSb quantum-dot lasers

InP-based IC technologies for 100-Gbit/s and beyond

Design and operation of uncooled 10 GB/S, 1310 NM electroabsorption modulated lasers

High power CW-DFB-LD with a novel non-integer order grating structure

The effect of current annealing for GaInNAs/GaAs laser grown by metalorganic chemical vapor deposition

Improvement of optical flip-flop characteristics of compact directionally coupled bistable laser diode

Monolithic integration of InGaAs/InAlGaAs-based semiconductor optical amplifiers and 10 Gb/s broadband electro-absorption modulators using quantum well intermixing technology

Mechanical stress caused by adsorption of O or N on a ga-terminated [100] GaAs surface: O gives compressive stress but N don't

Improved transconductance N-channel enhancement/inversion mode GaAs-MISFETs with gate insulating layers formed by dry oxi-nitridation

16th IPRM. 2004 International Conference on Indium Phosphide and Related Materials, 2004.
Latest Publications