scholarly journals Total-electron-yield current measurements for near-surface extended x-ray-absorption fine structure

1988 ◽  
Vol 37 (5) ◽  
pp. 2450-2464 ◽  
Author(s):  
A. Erbil ◽  
G. S. Cargill III ◽  
R. Frahm ◽  
R. F. Boehme
Keyword(s):  
Fine Structure ◽  
Total Electron Yield ◽  
Total Electron ◽  
Near Surface ◽  
X Ray ◽  
Absorption Fine ◽  
Electron Yield ◽  
X Ray Absorption

VUV- and Soft X-Ray-Induced Optical Luminescence and X-Ray Absorption Fine Structures of Porous Silicon

1992 ◽  
Vol 281 ◽  
Author(s):  
T. K. Sham ◽  
D. T. Jiang ◽  
I. Coulthard ◽  
J. W. Lorimer ◽  
X. H. Feng ◽  
...  
Keyword(s):  
Porous Silicon ◽  
Total Electron Yield ◽  
Total Electron ◽  
X Ray ◽  
Absorption Fine ◽  
Electron Yield ◽  
Optical Luminescence ◽  
Fine Structures ◽  
X Ray Absorption ◽  
Uv Excitation

ABSTRACTOptical luminescence in porous silicon induced by soft X-ray and vacuum UV excitation with energies in the vicinity of the Si K-edge (1838 eV) and the Si L-edge (99 eV) has been observed. The luminescence has been used, together with total electron yield, to record X-ray absorption fine structure (XAFS) in the near-edge region of both Si edges. The near- edge spectra recorded simultaneously with either luminescence or total electron yield were compared, and the implications of these measurements for the structure of porous silicon are discussed.

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