Lack of proportionality of total electron yield and soft x-ray absorption coefficient

2000 ◽  
Vol 87 (1) ◽  
pp. 257-268 ◽  
Author(s):  
H. Henneken ◽  
F. Scholze ◽  
G. Ulm
Keyword(s):  
Absorption Coefficient ◽  
Total Electron Yield ◽  
Total Electron ◽  
X Ray ◽  
Electron Yield ◽  
X Ray Absorption

VUV- and Soft X-Ray-Induced Optical Luminescence and X-Ray Absorption Fine Structures of Porous Silicon

1992 ◽  
Vol 281 ◽  
Author(s):  
T. K. Sham ◽  
D. T. Jiang ◽  
I. Coulthard ◽  
J. W. Lorimer ◽  
X. H. Feng ◽  
...  
Keyword(s):  
Porous Silicon ◽  
Total Electron Yield ◽  
Total Electron ◽  
X Ray ◽  
Absorption Fine ◽  
Electron Yield ◽  
Optical Luminescence ◽  
Fine Structures ◽  
X Ray Absorption ◽  
Uv Excitation

ABSTRACTOptical luminescence in porous silicon induced by soft X-ray and vacuum UV excitation with energies in the vicinity of the Si K-edge (1838 eV) and the Si L-edge (99 eV) has been observed. The luminescence has been used, together with total electron yield, to record X-ray absorption fine structure (XAFS) in the near-edge region of both Si edges. The near- edge spectra recorded simultaneously with either luminescence or total electron yield were compared, and the implications of these measurements for the structure of porous silicon are discussed.

Probing depth of soft x-ray absorption spectroscopy measured in total-electron-yield mode

1992 ◽  
Vol 18 (1) ◽  
pp. 65-69 ◽  
Author(s):  
M. Abbate ◽  
J. B. Goedkoop ◽  
F. M. F. de Groot ◽  
M. Grioni ◽  
J. C. Fuggle ◽  
...  
Keyword(s):  
Absorption Spectroscopy ◽  
Total Electron Yield ◽  
Total Electron ◽  
X Ray ◽  
Electron Yield ◽  
Probing Depth ◽  
X Ray Absorption ◽  
Yield Mode

scholarly journals Total-electron-yield current measurements for near-surface extended x-ray-absorption fine structure

1988 ◽  
Vol 37 (5) ◽  
pp. 2450-2464 ◽  
Author(s):  
A. Erbil ◽  
G. S. Cargill III ◽  
R. Frahm ◽  
R. F. Boehme
Keyword(s):  
Fine Structure ◽  
Total Electron Yield ◽  
Total Electron ◽  
Near Surface ◽  
X Ray ◽  
Absorption Fine ◽  
Electron Yield ◽  
X Ray Absorption

Spectral Distribution of Oscillator Strength for Core-to-Valence Transitions probed by using X-ray Absorption and Total Electron Yield Modes

2018 ◽  
Vol 232 (5-6) ◽  
pp. 907-917 ◽  
Author(s):  
Xenia O. Brykalova ◽  
Andrey A. Pavlychev
Keyword(s):  
Oscillator Strength ◽  
Spectral Distribution ◽  
Function Method ◽  
Chem Phys ◽  
Total Electron Yield ◽  
Total Electron ◽  
X Ray ◽  
Line Shapes ◽  
Electron Yield ◽  
X Ray Absorption

Abstract Changes in spectral distribution of oscillator strength for core-to-valence transitions probed by X-ray absorption and total electron yield (TEY) modes are studied in more detail. The quantitative analysis of their redistribution in TEY due to the saturation effect is performed by applying the model $\tilde M$ -function method suggested by Flesch et al. J. Chem. Phys. 138 (2013) 144302. The model $\tilde M$ -function method is generalized to account for the saturation-induced distortion of the line shape of the transitions embedded into the core ionization continua and located below them. It is shown that TEY measurements produce essential changes not only in the relative intensity of the transitions but also shift upward the transition energy, broaden the Lorentzian and Gaussian widths and enhance the line asymmetry. The Gaussian width of the TEY signal undergoes the most substantial broadening though the Lorentzian width increases significantly too. The saturation-induced distortion of the line shapes is not negligible even if the well-known escape-to-penetration condition is valid.

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