Local structure around phosphorus atoms in nickel-phosphorus alloy films studied by total electron yield x-ray absorption fine structure

2001 ◽  
Vol 30 (1) ◽  
pp. 15-20 ◽  
Author(s):  
Takashi Watanabe ◽  
Jun Kato ◽  
Shuji Matsuo ◽  
Hisanobu Wakita ◽  
Norimasa Umesaki
1988 ◽  
Vol 37 (5) ◽  
pp. 2450-2464 ◽  
Author(s):  
A. Erbil ◽  
G. S. Cargill III ◽  
R. Frahm ◽  
R. F. Boehme

1992 ◽  
Vol 281 ◽  
Author(s):  
T. K. Sham ◽  
D. T. Jiang ◽  
I. Coulthard ◽  
J. W. Lorimer ◽  
X. H. Feng ◽  
...  

ABSTRACTOptical luminescence in porous silicon induced by soft X-ray and vacuum UV excitation with energies in the vicinity of the Si K-edge (1838 eV) and the Si L-edge (99 eV) has been observed. The luminescence has been used, together with total electron yield, to record X-ray absorption fine structure (XAFS) in the near-edge region of both Si edges. The near- edge spectra recorded simultaneously with either luminescence or total electron yield were compared, and the implications of these measurements for the structure of porous silicon are discussed.


Symmetry ◽  
2021 ◽  
Vol 13 (8) ◽  
pp. 1315
Author(s):  
Takafumi Miyanaga

X-ray absorption fine structure (XAFS) is a powerful technique used to analyze a local electronic structure, local atomic structure, and structural dynamics. In this review, I present examples of XAFS that apply to the local structure and dynamics of functional materials: (1) structure phase transition in perovskite PbTiO3 and magnetic FeRhPd alloys; (2) nano-scaled fluctuations related to their magnetic properties in Ni–Mn alloys and Fe/Cr thin films; and (3) the Debye–Waller factors related to the chemical reactivity for catalysis in polyanions and ligand exchange reaction. This study shows that the local structure and dynamics are related to the characteristic function of the materials.


2003 ◽  
Vol 798 ◽  
Author(s):  
V. Katchkanov ◽  
J. F. W. Mosselmans ◽  
S. Dalmasso ◽  
K. P. O'Donnell ◽  
R. W. Martin ◽  
...  

ABSTRACTThe local structure around Er and Eu atoms introduced into GaN epilayers was studied by means of Extended X-ray Absorption Fine Structure above the appropriate rare-earth X-ray absorption edge. The samples were doped in situ during growth by Molecular Beam Epitaxy. The formation of ErN clusters was found in samples with high average Er concentrations of 32±6% and 12.4±0.8%, estimated by Wavelength Dispersive X-ray analysis. When the average Er concentration is decreased to 6.0±0.2%, 1.6±0.2% and 0.17±0.02%, Er is found in localised clusters of ErGaN phase with high local Er content. Similar behaviour is observed for Eu-doped samples. For an average Eu concentration of 30.5±0.5% clusters of pure EuN occur. Decreasing the Eu concentration to 10.4±0.5% leads to EuGaN clusters with high local Eu content. However, for a sample with an Eu concentration of 14.2±0.5% clustering of Eu was not observed.


2005 ◽  
Vol 54 (12) ◽  
pp. 5837
Author(s):  
Wu Tai-Quan ◽  
Tang Jing-Chang ◽  
Zhu Ping ◽  
Li Hai-Yang

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