Total electron yield measurements of extended x‐ray absorption fine structures (EXAFS) of Ni and Fe thin foils, and adsorption of Ni on polycrystalline Fe substrates

1985 ◽  
Vol 83 (11) ◽  
pp. 5914-5922 ◽  
Author(s):  
T. K. Sham ◽  
R. G. Carr
1992 ◽  
Vol 281 ◽  
Author(s):  
T. K. Sham ◽  
D. T. Jiang ◽  
I. Coulthard ◽  
J. W. Lorimer ◽  
X. H. Feng ◽  
...  

ABSTRACTOptical luminescence in porous silicon induced by soft X-ray and vacuum UV excitation with energies in the vicinity of the Si K-edge (1838 eV) and the Si L-edge (99 eV) has been observed. The luminescence has been used, together with total electron yield, to record X-ray absorption fine structure (XAFS) in the near-edge region of both Si edges. The near- edge spectra recorded simultaneously with either luminescence or total electron yield were compared, and the implications of these measurements for the structure of porous silicon are discussed.


1988 ◽  
Vol 37 (5) ◽  
pp. 2450-2464 ◽  
Author(s):  
A. Erbil ◽  
G. S. Cargill III ◽  
R. Frahm ◽  
R. F. Boehme

1992 ◽  
Vol 18 (1) ◽  
pp. 65-69 ◽  
Author(s):  
M. Abbate ◽  
J. B. Goedkoop ◽  
F. M. F. de Groot ◽  
M. Grioni ◽  
J. C. Fuggle ◽  
...  

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