Resonant-photoemission study of the mechanism for room-temperature-alloyed interface formation of Au and Ag on Si(111)-(2×1)

1988 ◽  
Vol 38 (2) ◽  
pp. 1047-1051 ◽  
Author(s):  
Motohiro Iwami ◽  
Masakazu Kubota ◽  
Tadashi Koyama ◽  
Hiroshi Tochihara ◽  
Yoshitada Murata
Keyword(s):  
Room Temperature ◽  
Interface Formation ◽  
Resonant Photoemission ◽  
Photoemission Study

PHOTOEMISSION STUDY OF THE GADOLINIUM/GaAs(100) INTERFACE WITH SYNCHROTRON RADIATION

1997 ◽  
Vol 04 (01) ◽  
pp. 25-31 ◽  
Author(s):  
SHIHONG XU ◽  
FAPEI ZHANG ◽  
ERDONG LU ◽  
XIAOJIANG YU ◽  
FAQIANG XU ◽  
...  
Keyword(s):  
Synchrotron Radiation ◽  
Epitaxial Growth ◽  
Room Temperature ◽  
Interface Structure ◽  
Binding Energies ◽  
Photoemission Spectroscopy ◽  
Interface Formation ◽  
X Ray ◽  
Solution Density ◽  
Photoemission Study

Soft-X-ray photoemission spectroscopy was used to characterize the Gd/GaAs(100)-interface formation at room temperature. At low Gd coverage (<1 Å), the interface is near-abrupt, because no evidence of reaction is observed. With increasing Gd coverage, photoemission signals from chemically reacted product at the interface are observed, causing some intermixing between the overlayer and the substrate. For As atoms, they remain near the interface and have little diffusion. Ga atoms, however, are not kept near the interface, and they can diffuse into the Gd overlayer and segregate onto the surface instead. From the observed variations with metal coverage of binding energies and relative intensities of photoemission signals from the reacted layer, a profile of the interface structure is proposed, and some parameters (decaying length, segregation density and solution density, etc.) have been obtained. The results show that the deposition of Gd onto the GaAs (100) surface induces limited substrate disruption except for some diffusion and segregation of Ga atoms into the metal overlayer. This paper demonstrates that the disruption and epitaxial growth are not mutually exclusive in the Gd / GaAs (100) system.

High-resolution resonant photoemission study of CeRu2

2000 ◽  
Vol 281-282 ◽  
pp. 729-730 ◽  
Author(s):  
K Matsuda ◽  
A Sekiyama ◽  
S Suga ◽  
S Imada ◽  
Y Saitoh ◽  
...  
Keyword(s):  
High Resolution ◽  
Resonant Photoemission ◽  
Photoemission Study

High resolution Ce 3 d –4 f resonant photoemission study of CeNiSn and CePdSn

1999 ◽  
Vol 111 (7) ◽  
pp. 373-378 ◽  
Author(s):  
A Sekiyama ◽  
S Suga ◽  
Y Saitoh ◽  
S Ueda ◽  
H Harada ◽  
...  
Keyword(s):  
High Resolution ◽  
Resonant Photoemission ◽  
Photoemission Study

Angle-resolved and resonant photoemission study of the ZrO-like film on ZrC(100)

2007 ◽  
Vol 601 (21) ◽  
pp. 5077-5082 ◽  
Author(s):  
K. Edamoto ◽  
T. Nagayama ◽  
K. Ozawa ◽  
S. Otani
Keyword(s):  
Resonant Photoemission ◽  
Photoemission Study

Interface formation of Ag and Au with InP(001)2×4: a photoemission study

1999 ◽  
Vol 143 (1-4) ◽  
pp. 104-114 ◽  
Author(s):  
S. Sloboshanin ◽  
H. Engelhard ◽  
A. Goldmann ◽  
J.A. Schaefer
Keyword(s):  
Interface Formation ◽  
Photoemission Study

Resonant photoemission study on the boron 1sexciton of the wide-band-gap semiconductorc-BN

1995 ◽  
Vol 52 (16) ◽  
pp. 11853-11858 ◽  
Author(s):  
S. Shin ◽  
A. Agui ◽  
M. Fujisawa ◽  
Y. Tezuka ◽  
T. Ishii ◽  
...  
Keyword(s):  
Band Gap ◽  
Wide Band ◽  
Wide Band Gap ◽  
Resonant Photoemission ◽  
Photoemission Study

Co/Si(111) interface formation at room temperature

1987 ◽  
Vol 36 (12) ◽  
pp. 6681-6684 ◽  
Author(s):  
J. Derrien ◽  
M. De Crescenzi ◽  
E. Chainet ◽  
C. d’Anterroches ◽  
C. Pirri ◽  
...  
Keyword(s):  
Room Temperature ◽  
Interface Formation

Photoemission study of the Fe/MnO interface formation

1993 ◽  
Vol 293 (1-2) ◽  
pp. 41-46 ◽  
Author(s):  
V.Di Castro ◽  
G. Polzonetti ◽  
S. Ciampi ◽  
G. Contini ◽  
O. Sakho
Keyword(s):  
Interface Formation ◽  
Photoemission Study
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