scholarly journals Giant band bending and interface formation of Cs/InAs(110) at room temperature

1994 ◽  
Vol 04 (C9) ◽  
pp. C9-217-C9-220 ◽  
Author(s):  
V. Yu. Aristov ◽  
P. S. Mangat ◽  
P. Soukiassian ◽  
G. Le Lay
Keyword(s):  
Room Temperature ◽  
Interface Formation ◽  
Band Bending

Critical role of nanoinclusions in silver selenide nanocomposites as a promising room temperature thermoelectric material

2019 ◽  
Vol 7 (9) ◽  
pp. 2646-2652 ◽  
Author(s):  
Khak Ho Lim ◽  
Ka Wai Wong ◽  
Yu Liu ◽  
Yu Zhang ◽  
Doris Cadavid ◽  
...  
Keyword(s):  
Seebeck Coefficient ◽  
Room Temperature ◽  
Opposite Effect ◽  
Critical Role ◽  
Free Carrier ◽  
Silver Selenide ◽  
Band Bending ◽  
Seebeck Coefficients ◽  
Electrical Conductivities

The introduction of nonmetal nanoinclusions within Ag2Se results in an interphase band bending that promotes electron filtering and increase Seebeck coefficient. Similar loading of metal nanoinclusions provided an opposite effect-modulating free carrier concentration, as characterized by superior electrical conductivities and lower Seebeck coefficients.

Co/Si(111) interface formation at room temperature

1987 ◽  
Vol 36 (12) ◽  
pp. 6681-6684 ◽  
Author(s):  
J. Derrien ◽  
M. De Crescenzi ◽  
E. Chainet ◽  
C. d’Anterroches ◽  
C. Pirri ◽  
...  
Keyword(s):  
Room Temperature ◽  
Interface Formation

Formation of interfacial phases in the epitaxial growth of Sb on Si(111)-7 ¥ 7 reconstructed surface

2002 ◽  
Vol 74 (9) ◽  
pp. 1651-1661 ◽  
Author(s):  
Vinod Kumar Paliwal ◽  
A. G. Vedeshwar ◽  
S. M. Shivaprasad
Keyword(s):  
Photoelectron Spectroscopy ◽  
Room Temperature ◽  
Branching Ratio ◽  
Interface State ◽  
Peak Position ◽  
Band Bending ◽  
Desorption Process ◽  
Surface Phase Transformation ◽  
Complementary Techniques ◽  
Reconstructed Surface

Understanding the evolution of the Sb/Si(111) interface is of great interest in the formation of devices of nanodimensions. We have undertaken in situ (∼10-11 torr) studies of Sb adsorption (at room temperature) and its desorption on the 7 X 7 reconstructed Si(111) surface, by complementary techniques such as X-ray photoelectron spectroscopy (XPS), Auger electron spectroscopy (AES), low-energy electron diffraction (LEED), and electron energy loss spectroscopy (EELS). For room-temperature (RT) Sb adsorption, the overlayer grows in the Frank van der Merwe mode, forming an interface state of δ(7 X 7) in the submonolayer Sb coverage regime. Adsorption of 1.0 monolayer (ML) Sb at RT shows an abrupt shift of 0.8 eV in the peak position of the Sb 3d5/2 transition owing to band-bending caused by a metallic (7 X 7) to a semiconducting (1 X 1) surface phase transformation. Changes observed in full width at half-maximum (fwhm) and Sb 3d3/2 and 3d5/2 branching ratio are discussed. Thermal annealing experiments provide evidence for agglomeration of Sb islands, before the multilayer and monolayer desorption. During this desorption process, we have observed two novel surface phases of (5 X 5) at 0.4 ML and (5√3 X 5√3­R30°) at 0.2 ML, stable at higher temperatures.

Initial Stages of Interface Formation in the Si/Sn System

1986 ◽  
Vol 77 ◽  
Author(s):  
M. Zinke-Allmang ◽  
H.-J. Gossmann ◽  
L. C. Feldman ◽  
G. J. Fisanick
Keyword(s):  
Room Temperature ◽  
Group Iv ◽  
Necessary Condition ◽  
Interface Formation ◽  
Island Formation ◽  
Simple Growth ◽  
Critical Coverage

ABSTRACTGroup IV-IV heterostructures with Sn as one constituent have potentially important applications. We report on an investigation of the initial stages of interface formation for deposition of Sn on Si(100)2×1 and Si(111)7×7. We find that simple growth occurs up to a critical coverage θc. (α1.25×1015 cm-2), independent of temperature. Beyond θc. growth continues to be laminar for deposition at 150 K only, while island formation is observed at temperatures at and above room temperature. The Si(111)7×7 reconstruction seems unperturbed by Sn deposition at room temperature while the Si(100)2×1 begins to order. However, the reordering, a necessary condition for perfect growth, is incomplete.

PHOTOEMISSION STUDY OF THE GADOLINIUM/GaAs(100) INTERFACE WITH SYNCHROTRON RADIATION

1997 ◽  
Vol 04 (01) ◽  
pp. 25-31 ◽  
Author(s):  
SHIHONG XU ◽  
FAPEI ZHANG ◽  
ERDONG LU ◽  
XIAOJIANG YU ◽  
FAQIANG XU ◽  
...  
Keyword(s):  
Synchrotron Radiation ◽  
Epitaxial Growth ◽  
Room Temperature ◽  
Interface Structure ◽  
Binding Energies ◽  
Photoemission Spectroscopy ◽  
Interface Formation ◽  
X Ray ◽  
Solution Density ◽  
Photoemission Study

Soft-X-ray photoemission spectroscopy was used to characterize the Gd/GaAs(100)-interface formation at room temperature. At low Gd coverage (<1 Å), the interface is near-abrupt, because no evidence of reaction is observed. With increasing Gd coverage, photoemission signals from chemically reacted product at the interface are observed, causing some intermixing between the overlayer and the substrate. For As atoms, they remain near the interface and have little diffusion. Ga atoms, however, are not kept near the interface, and they can diffuse into the Gd overlayer and segregate onto the surface instead. From the observed variations with metal coverage of binding energies and relative intensities of photoemission signals from the reacted layer, a profile of the interface structure is proposed, and some parameters (decaying length, segregation density and solution density, etc.) have been obtained. The results show that the deposition of Gd onto the GaAs (100) surface induces limited substrate disruption except for some diffusion and segregation of Ga atoms into the metal overlayer. This paper demonstrates that the disruption and epitaxial growth are not mutually exclusive in the Gd / GaAs (100) system.

Schottky-barrier and interface formation of Cs/GaSb(110) and Rb/GaSb(110) at room temperature

1994 ◽  
Vol 49 (8) ◽  
pp. 5490-5497 ◽  
Author(s):  
K. M. Schirm ◽  
P. Soukiassian ◽  
P. S. Mangat ◽  
L. Soonckindt
Keyword(s):  
Schottky Barrier ◽  
Room Temperature ◽  
Interface Formation

Transition from Schottky Limit to Bardeen Limit in the Schottky Barrier Formation of al on n- and p-GaAs(110) Interfaces

1986 ◽  
Vol 77 ◽  
Author(s):  
K. K. Chin ◽  
R. Cao ◽  
T. Kendelewicz ◽  
K. Miyano ◽  
M. D. Williams ◽  
...  
Keyword(s):  
Fermi Level ◽  
Schottky Barrier ◽  
Room Temperature ◽  
Defect Model ◽  
Surface Band ◽  
Band Bending ◽  
Pinning Centers ◽  
Free Interface ◽  
Barrier Formation ◽  
Surface Disturbance

ABSTRACTSchottky barrier formation at room temperature (RT) and low temperature (LT) is studied by photoemission. In the low Al coverage regime (from 0.001 to about 1 ML), it is found that, compared to RT pinning behavior, the n-GaAs(110) surface band bending is attenuated, while the p-GaAs(110) surface band bending is enhanced. This striking phenomenon indicates that, by lowering the substrate temperature, one reduces the disturbance of the GaAs(110) surface, and the surface Fermi level of the n- and p-GaAs(110) tends to go to the same position, the so-called Schottky limit that characterizes a perfect defect-free interface. However, as the coverage increases (up to 30 ML), a new mechanism (in the framework of the unified defect model, it is the formation of defect levels due to the energy released as the adsorbed Al atoms start to form clusters and replace Ga) associated with a disturbed surface becomes dominant. Thus, the LT Fermi level positions of n- and p-GaAs move towards the RT positions, the so-called Bardeen limit. This demonstrates that, by controlling the surface disturbance, one can modify the Schottky barrier formation process, going from the Schottky limit which does not have pinning centers to the Bardeen limit which suggests the existence of pinning centers.

scholarly journals Effect of Au substrate and coating on the lasing characteristics of GaAs nanowires

2021 ◽  
Vol 11 (1) ◽  
Author(s):  
Gyanan Aman ◽  
Fatemeh Mohammadi ◽  
Martin Fränzl ◽  
Mykhaylo Lysevych ◽  
Hark Hoe Tan ◽  
...  
Keyword(s):  
Room Temperature ◽  
Field Enhancement ◽  
Low Loss ◽  
Band Bending ◽  
Radiative Efficiency ◽  
Polarization Control ◽  
Au Film ◽  
Gaas Nanowires ◽  
On Chip ◽  
Film Substrate

AbstractOptically pumped lasing from highly Zn-doped GaAs nanowires lying on an Au film substrate and from Au-coated nanowires has been demonstrated up to room temperature. The conically shaped GaAs nanowires were first coated with a 5 nm thick Al2O3 shell to suppress atmospheric oxidation and band-bending effects. Doping with a high Zn concentration increases both the radiative efficiency and the material gain and leads to lasing up to room temperature. A detailed analysis of the observed lasing behavior, using finite-difference time domain simulations, reveals that the lasing occurs from low loss hybrid modes with predominately photonic character combined with electric field enhancement effects. Achieving low loss lasing from NWs on an Au film and from Au coated nanowires opens new prospects for on-chip integration of nanolasers with new functionalities including electro-optical modulation, conductive shielding, and polarization control.

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