Dynamics of the creation of light-induced defects in amorphous silicon alloys

1986 ◽  
Vol 33 (4) ◽  
pp. 2512-2519 ◽  
Author(s):  
M. Hack ◽  
S. Guha ◽  
W. den Boer
Keyword(s):  
Amorphous Silicon ◽  
Silicon Alloys ◽  
The Creation ◽  
Induced Defects

A Critical Test of Defect Creation Models in Hydrogenated Amorphous Silicon Alloys

2000 ◽  
Vol 609 ◽  
Author(s):  
Kimon C. Palinginis ◽  
Jeffrey C. Yang ◽  
S. Guha ◽  
J. David Cohen
Keyword(s):  
Amorphous Silicon ◽  
Defect Density ◽  
Dangling Bonds ◽  
Silicon Alloys ◽  
Illumination Time ◽  
Deep Defect ◽  
Photocurrent Spectroscopy ◽  
Defect Creation ◽  
The Creation ◽  
Kinetics Of

ABSTRACTUsing the modulated photocurrent method we studied the deep defect creation and annealing kinetics of amorphous silicon-germanium alloys with Ge fractions below 10at.%. The modulated photocurrent spectroscopy clearly discloses the existence of two distinct bands of majority carrier traps in these alloys. The bands were identified as neutral Si dangling bonds and neutral Ge dangling bonds. Our studies show clearly that the Si and Ge defects directly compete with each other during annealing, implying a global reconfiguration mechanism. The creation kinetics reveal the usual t1/3 illumination time dependence for the total deep defect density. However, the individual densities of Si and Ge defects have different time dependencies. The details of the creation and annealing kinetics of Ge and Si defects are used to test predictions of certain defect creation models.

Contributions of D0 and non-D0 Gap States to the Kinetics of Light Induced Degradation of Amorphous Silicon under 1 sun Illumination

2001 ◽  
Vol 664 ◽  
Author(s):  
J. Pearce ◽  
X. Niu ◽  
R. Koval ◽  
G. Ganguly ◽  
D. Carlson ◽  
...  
Keyword(s):  
Amorphous Silicon ◽  
Degradation Kinetics ◽  
Hydrogen Dilution ◽  
Spin Resonance ◽  
The Creation ◽  
Staebler Wronski Effect ◽  
Gap States ◽  
Induced Changes ◽  
Induced Defects ◽  
Hydrogenated Amorphous

ABSTRACTLight induced changes to 1 sun degraded steady state (DSS) have been investigated on hydrogenated amorphous silicon (a-Si:H) p-i-n solar cells and corresponding films fabricated with and without hydrogen dilution of silane. Striking similarities are found for the degradation kinetics, between the electron mobility lifetime (μτ) products and the corresponding fill factors (FF). These correlations that exist for both intrinsic materials at temperatures between 25 and 100°C, are present for the DSS as well as in the kinetics, which exihibit distinctly different dependence on temperature. No such correlations are present between μτ, FF and densities of D0 defects, measured with subgap absorption α(E) at 1.2eV, and electron spin resonance (ESR). The creation of non-D0 defects is also clearly indicated by the temperature dependence of the kinetics and the changes in the shape of α(E) with the results suggesting the presence of more than one mechanism for the creation of light induced defects associated with the Staebler-Wronski effect (SWE).

Metastable Defects in a-SiOx:H and a-SiCx:H

1991 ◽  
Vol 219 ◽  
Author(s):  
X.-M. Deng ◽  
A. Hamed ◽  
H. Fritzsche ◽  
M. Q. Tran
Keyword(s):  
Amorphous Silicon ◽  
Charge Exchange ◽  
Hydrogenated Amorphous Silicon ◽  
Silicon Alloys ◽  
The Creation ◽  
Hydrogenated Amorphous ◽  
Anneal Temperature

ABSTRACTMetastable defects are created in hydrogenated amorphous silicon alloys presumably by the same mechanism as in a-Si:H. We find metastable defects created in a-SiCx:H and a-SiOx:H by hopping injection of photocarriers from adjacent a-Si:H layers. In a-SiCx:H the defects can be created only below T=150K, they anneal at TE=400K. In a-SiOx:H they are created at or below T=300K, they anneal at TE=480K. The anneal temperature is nearly independent of the creation temperature. The defects are detected by their charge exchange with adjacent a-Si:H layers whose conductance is thereby changed.

Vibrational properties of amorphous silicon alloys

1981 ◽  
Vol 23 (10) ◽  
pp. 5263-5268 ◽  
Author(s):  
W. B. Pollard ◽  
J. D. Joannopoulos
Keyword(s):  
Amorphous Silicon ◽  
Vibrational Properties ◽  
Silicon Alloys

Determination of Density of Localized States in Amorphous Silicon Alloys From the Low Field Conductance of Thin N-I-N Diodes

1985 ◽  
Vol 49 ◽  
Author(s):  
Michael Shur ◽  
Michael Hack
Keyword(s):  
Temperature Dependence ◽  
Amorphous Silicon ◽  
Bulk Density ◽  
Density Of States ◽  
Energy Gap ◽  
Localized States ◽  
New Technique ◽  
Silicon Alloys ◽  
Low Field ◽  
Density Of Localized States

AbstractWe describe a new technique to determine the bulk density of localized states in the energy gap of amorphous silicon alloys from the temperature dependence of the low field conductance of n-i-n diodes. This new technique allows us to determine the bulk density of states in the centre of a device, and is very straightforward, involving fewer assumptions than other established techniques. Varying the intrinsic layer thickness allows us to measure the,density of states within approximately 400 meV of midgap.We measured the temperature dependence of the low field conductance of an amorphous silicon alloy n-i-n diode with an intrinsic layer thjckness of 0.45 microns and deduced the density of localised states to be 3xlO16cm−3 eV−1 at approximately 0.5 eV below the bottom of the conduction band. We have also considered the high bias region (the space charge limited current regime) and proposed an interpolation formula which describes the current-voltage characteristics of these structures at all biases and agrees well with our computer simulation based on the solution of the complete system of transport equations.

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