Light‐induced defects in hydrogenated amorphous silicon alloys

1988 ◽  
Vol 52 (8) ◽  
pp. 643-644 ◽  
Author(s):  
Andrew Skumanich ◽  
Nabil M. Amer
Keyword(s):  
Amorphous Silicon ◽  
Hydrogenated Amorphous Silicon ◽  
Silicon Alloys ◽  
Induced Defects ◽  
Hydrogenated Amorphous

Hot plasma box glow discharge reactor for production of uniform films of hydrogenated amorphous silicon alloys

1991 ◽  
Vol 197 (1-2) ◽  
pp. 215-224 ◽  
Author(s):  
D.M. Bhusari ◽  
L. Kale ◽  
A. Kumbhar ◽  
S. Sabane ◽  
S.T. Kshirsagar
Keyword(s):  
Glow Discharge ◽  
Amorphous Silicon ◽  
Hydrogenated Amorphous Silicon ◽  
Silicon Alloys ◽  
Hot Plasma ◽  
Hydrogenated Amorphous

Role of the hydrogen in the light-induced defects in undoped hydrogenated amorphous silicon

1991 ◽  
pp. 265-268
Author(s):  
H. Labidi ◽  
K. Zellama ◽  
P. Germain ◽  
M. Astier ◽  
D. Lortigues ◽  
...  
Keyword(s):  
Amorphous Silicon ◽  
Hydrogenated Amorphous Silicon ◽  
Induced Defects ◽  
Hydrogenated Amorphous

Kinetics of Growth and Recovery of Light-Induced Defects Under High-Intensity Illumination

1992 ◽  
Vol 258 ◽  
Author(s):  
Masao Isomura ◽  
Sigurd Wagner
Keyword(s):  
Light Intensity ◽  
Amorphous Silicon ◽  
High Intensity ◽  
Hydrogenated Amorphous Silicon ◽  
Increased Sensitivity ◽  
Induced Defects ◽  
Hydrogenated Amorphous ◽  
Kinetics Of ◽  
Diffusion Of Hydrogen

ABSTRACTWe report a study of the rates of generation and of annealing of the light-induced defects in hydrogenated amorphous silicon (a-Si:H). The rates of generation are found to be sensitive to temperature when the light intensity is high. This increased sensitivity to temperature at high rates suggests that a temperature-activated process such as hydrogen motion controls the rates of generation more when they are high. The rate of annealing at 130°C is strongly accelerated by illumination, and depends strongly on the light intensity. This may be explained by the diffusion of hydrogen, accelerated by excess carriers.

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