Metastable Defects in a-SiOx:H and a-SiCx:H

1991 ◽  
Vol 219 ◽  
Author(s):  
X.-M. Deng ◽  
A. Hamed ◽  
H. Fritzsche ◽  
M. Q. Tran
Keyword(s):  
Amorphous Silicon ◽  
Charge Exchange ◽  
Hydrogenated Amorphous Silicon ◽  
Silicon Alloys ◽  
The Creation ◽  
Hydrogenated Amorphous ◽  
Anneal Temperature

ABSTRACTMetastable defects are created in hydrogenated amorphous silicon alloys presumably by the same mechanism as in a-Si:H. We find metastable defects created in a-SiCx:H and a-SiOx:H by hopping injection of photocarriers from adjacent a-Si:H layers. In a-SiCx:H the defects can be created only below T=150K, they anneal at TE=400K. In a-SiOx:H they are created at or below T=300K, they anneal at TE=480K. The anneal temperature is nearly independent of the creation temperature. The defects are detected by their charge exchange with adjacent a-Si:H layers whose conductance is thereby changed.

Impurities and Metastable Centers in Amorphous Silicon Solar Cells

1986 ◽  
Vol 70 ◽  
Author(s):  
D. E. Carlson
Keyword(s):  
Solar Cells ◽  
Amorphous Silicon ◽  
Hydrogenated Amorphous Silicon ◽  
Silicon Solar Cells ◽  
Internal Surfaces ◽  
Induced Motion ◽  
Recombination Centers ◽  
The Creation ◽  
Electronic Activity ◽  
Hydrogenated Amorphous

ABSTRACTAmorphous silicon solar cells are adversely affected by impurities through the creation of traps, recombination centers and metastable centers. The microstructure of discharged-produced, hydrogenated amorphous silicon (a-Si:H) appears to be strongly affected by the presence of impurities in the discharge atmosphere. A model is developed in which impurities create microvoids in a-Si:H, and traps, recombination centers and metastable centers are associated with the internal surfaces of the microvoids. In this model, hydrogen plays an important role in determining the electronic activity and diffusivity of impurities, and metastable centers are created by the trapping of holes near microvoids and the induced motion of hydrogen on the internal surfaces of the microvoids.

Hot plasma box glow discharge reactor for production of uniform films of hydrogenated amorphous silicon alloys

1991 ◽  
Vol 197 (1-2) ◽  
pp. 215-224 ◽  
Author(s):  
D.M. Bhusari ◽  
L. Kale ◽  
A. Kumbhar ◽  
S. Sabane ◽  
S.T. Kshirsagar
Keyword(s):  
Glow Discharge ◽  
Amorphous Silicon ◽  
Hydrogenated Amorphous Silicon ◽  
Silicon Alloys ◽  
Hot Plasma ◽  
Hydrogenated Amorphous

Hydrogenated Amorphous Silicon Alloys Prepared by CVD of Higher Silanes

1986 ◽  
Vol 70 ◽  
Author(s):  
Masud Akhtar ◽  
Herbert A. Weaklie
Keyword(s):  
Amorphous Silicon ◽  
Band Gap ◽  
Plasma Deposition ◽  
Hydrogenated Amorphous Silicon ◽  
Chemical Vapor ◽  
Wide Band ◽  
Dark Conductivity ◽  
Attractive Alternative ◽  
Silicon Alloys ◽  
Hydrogenated Amorphous

ABSTRACTHydrogenated amorphous silicon may be deposited at relatively low temperatures, where the density of defects may be expected to be low, by the chemical vapor deposition (CVD) of higher silanes. This method is an attractive alternative to plasma deposition techniques. We describe here the preparation of a-Si:H and related alloys incorporating carbon, germanium, and fluorine. a-Si:H films were deposited on heated substrates in the range 365°C-445°C by CVD of Si2H6 and Si3H8. The optical gap (Eg) ranged from 1.4 to 1.7 eV and the properties of films deposited from either Si2 H6 or Si3 H8 were quite similar. Wide band gap (Eg=2 eV) alloys of a-SiC:H doped with boron were prepared by CVD of disilane, methyl silane, and diborane. We also prepared variable band gap a-SiC:H alloys by substituting F2C= CFH for methylsilane, and these films were found to have approximately 1–2% fluorine incorporated. The dark conductivity of the boron doped a-SiC:H alloys dep~sited from either carbon source ranged from ix10-7 to 6x10-7 (ohm-cm)-1. We also prepared low band aap alloys of Si and Ge by CVD of trisilane and germane. The band gap of a film containing 20% Ge was 1.5 eV; however, the photoconductivity of the film was relatively low.

Substrate imposed stress-strain effect on photoluminescence in hydrogenated amorphous silicon alloys

1997 ◽  
Vol 71 (20) ◽  
pp. 3007-3009 ◽  
Author(s):  
Keunjoo Kim ◽  
M. S. Suh ◽  
H. W. Shim ◽  
C. J. Youn ◽  
E-K. Suh ◽  
...  
Keyword(s):  
Amorphous Silicon ◽  
Hydrogenated Amorphous Silicon ◽  
Strain Effect ◽  
Stress Strain ◽  
Silicon Alloys ◽  
Hydrogenated Amorphous
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