Annealing behavior of light‐induced defects in hydrogenated amorphous silicon alloys

1984 ◽  
Vol 45 (1) ◽  
pp. 50-51 ◽  
Author(s):  
S. Guha ◽  
C. ‐Y. Huang ◽  
S. J. Hudgens
1998 ◽  
Vol 507 ◽  
Author(s):  
Baojie Yan ◽  
Shenlin Chen ◽  
P. C. Taylor

ABSTRACTThe creation and annealing kinetics of light-induced defects in a-SiSx:H are studied by ESR and LESR measurements. The dispersion of defect creation after prolonged illumination with white light is greater for a-SiSx:H than that for undoped a-Si:H. In addition, the saturated value of the dark spin density is slightly lower for a-SiSx:H than that for a-Si:H. The annealing behavior can be fitted with a Gaussian distribution of annealing activation energies as is the case for undoped a-Si:H. The incorporation of sulfur decreases the peak energy and increases the width of the distribution of activation energies. Light-soaking does not change the low temperature LESR spectrum and LESR spin density.


1991 ◽  
Vol 197 (1-2) ◽  
pp. 215-224 ◽  
Author(s):  
D.M. Bhusari ◽  
L. Kale ◽  
A. Kumbhar ◽  
S. Sabane ◽  
S.T. Kshirsagar

1991 ◽  
pp. 265-268
Author(s):  
H. Labidi ◽  
K. Zellama ◽  
P. Germain ◽  
M. Astier ◽  
D. Lortigues ◽  
...  

Sign in / Sign up

Export Citation Format

Share Document