Annealing behavior of light‐induced defects in boron‐doped hydrogenated amorphous silicon alloys

1985 ◽  
Vol 57 (12) ◽  
pp. 5539-5541 ◽  
Author(s):  
W. den Boer ◽  
S. Guha
Keyword(s):  
Amorphous Silicon ◽  
Hydrogenated Amorphous Silicon ◽  
Silicon Alloys ◽  
Annealing Behavior ◽  
Boron Doped ◽  
Induced Defects ◽  
Hydrogenated Amorphous

Kinetics of Light-Induced Deffect Formation and Annealing in Hydrogenated Amorphous Silicon Alloyed with Sulfur

1998 ◽  
Vol 507 ◽  
Author(s):  
Baojie Yan ◽  
Shenlin Chen ◽  
P. C. Taylor
Keyword(s):  
Low Temperature ◽  
Amorphous Silicon ◽  
Spin Density ◽  
Hydrogenated Amorphous Silicon ◽  
Activation Energies ◽  
Annealing Behavior ◽  
Peak Energy ◽  
Induced Defects ◽  
Hydrogenated Amorphous ◽  
Kinetics Of

ABSTRACTThe creation and annealing kinetics of light-induced defects in a-SiSx:H are studied by ESR and LESR measurements. The dispersion of defect creation after prolonged illumination with white light is greater for a-SiSx:H than that for undoped a-Si:H. In addition, the saturated value of the dark spin density is slightly lower for a-SiSx:H than that for a-Si:H. The annealing behavior can be fitted with a Gaussian distribution of annealing activation energies as is the case for undoped a-Si:H. The incorporation of sulfur decreases the peak energy and increases the width of the distribution of activation energies. Light-soaking does not change the low temperature LESR spectrum and LESR spin density.

Negative light‐modulation effect of boron‐doped hydrogenated amorphous silicon

1991 ◽  
Vol 59 (4) ◽  
pp. 390-392 ◽  
Author(s):  
Yoshinobu Maeda ◽  
Shigeichi Yamamoto ◽  
Masatoshi Migitaka
Keyword(s):  
Amorphous Silicon ◽  
Hydrogenated Amorphous Silicon ◽  
Light Modulation ◽  
Modulation Effect ◽  
Boron Doped ◽  
Hydrogenated Amorphous
Sign in / Sign up

Export Citation Format

Share Document