Local electrical properties of n-AlInAs/i-GaInAs electron channel structures characterized by theprobe-electron-beam-induced current technique

Kentaro Watanabe; Takeshi Nokuo; Jun Chen; Takashi Sekiguchi

doi:10.1093/jmicro/dft050

Local electrical properties of n-AlInAs/i-GaInAs electron channel structures characterized by theprobe-electron-beam-induced current technique

Microscopy ◽

10.1093/jmicro/dft050 ◽

2013 ◽

Vol 63 (2) ◽

pp. 161-166 ◽

Cited By ~ 3

Author(s):

Kentaro Watanabe ◽

Takeshi Nokuo ◽

Jun Chen ◽

Takashi Sekiguchi

Keyword(s):

Electron Beam ◽

Electrical Properties ◽

Induced Current ◽

Electron Channel ◽

Current Technique ◽

Electron Beam Induced Current ◽

Channel Structures

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Difference of the electrical properties of screw and 60° dislocations in silicon as detected with temperature‐dependent electron beam induced current technique

Applied Physics Letters ◽

10.1063/1.107801 ◽

1992 ◽

Vol 61 (7) ◽

pp. 792-794 ◽

Cited By ~ 12

Author(s):

Susumu Kusanagi ◽

Takashi Sekiguchi ◽

Koji Sumino

Keyword(s):

Electron Beam ◽

Electrical Properties ◽

Induced Current ◽

Temperature Dependent ◽

Current Technique ◽

Electron Beam Induced Current

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Extracting diffusion length using the single contact electron beam induced current technique

Solid-State Electronics ◽

10.1016/s0038-1101(00)00113-1 ◽

2000 ◽

Vol 44 (9) ◽

pp. 1585-1590 ◽

Cited By ~ 3

Author(s):

Vincent K.S Ong ◽

Dethau Wu

Keyword(s):

Electron Beam ◽

Diffusion Length ◽

Induced Current ◽

Current Technique ◽

Electron Beam Induced Current ◽

Single Contact

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Analysis of local electrical properties of grain boundaries in Si by electron-beam-induced-current techniques

Journal of Physics Condensed Matter ◽

10.1088/0953-8984/14/48/364 ◽

2002 ◽

Vol 14 (48) ◽

pp. 13161-13168 ◽

Cited By ~ 6

Author(s):

S Pandelov ◽

W Seifert ◽

M Kittler ◽

J Reif

Keyword(s):

Electron Beam ◽

Electrical Properties ◽

Grain Boundaries ◽

Induced Current ◽

Electron Beam Induced Current

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Denuded zone and diffusion length investigation by electron beam induced current technique in intrinsically gettered Czochralski silicon

Journal of Applied Physics ◽

10.1063/1.369271 ◽

1999 ◽

Vol 85 (3) ◽

pp. 1395-1400

Author(s):

S. Spiga ◽

A. Castaldini ◽

A. Cavallini ◽

M. L. Polignano ◽

F. Cazzaniga

Keyword(s):

Electron Beam ◽

Diffusion Length ◽

Induced Current ◽

Czochralski Silicon ◽

Current Technique ◽

Electron Beam Induced Current ◽

And Diffusion

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Investigation of the recombination activity of misfit dislocations in Si/SiGe epilayers by cathodoluminescence imaging and the electron beam induced current technique

Applied Physics Letters ◽

10.1063/1.110600 ◽

1993 ◽

Vol 63 (15) ◽

pp. 2085-2087 ◽

Cited By ~ 25

Author(s):

V. Higgs ◽

M. Kittler

Keyword(s):

Electron Beam ◽

Misfit Dislocations ◽

Induced Current ◽

Recombination Activity ◽

Current Technique ◽

Electron Beam Induced Current ◽

Cathodoluminescence Imaging

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Correlation between morphological defects, electron beam-induced current imaging, and the electrical properties of 4H–SiC Schottky diodes

Journal of Applied Physics ◽

10.1063/1.1829784 ◽

2005 ◽

Vol 97 (1) ◽

pp. 013540 ◽

Cited By ~ 39

Author(s):

Y. Wang ◽

G. N. Ali ◽

M. K. Mikhov ◽

V. Vaidyanathan ◽

B. J. Skromme ◽

...

Keyword(s):

Electron Beam ◽

Electrical Properties ◽

Schottky Diodes ◽

Induced Current ◽

Morphological Defects ◽

Electron Beam Induced Current

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Electron beam induced current technique using a scanning Auger microprobe

Review of Scientific Instruments ◽

10.1063/1.1137905 ◽

1984 ◽

Vol 55 (7) ◽

pp. 1129-1131 ◽

Cited By ~ 1

Author(s):

T. V. Rao ◽

V. Dutta ◽

O. S. Sastry ◽

K. L. Chopra

Keyword(s):

Electron Beam ◽

Induced Current ◽

Current Technique ◽

Scanning Auger Microprobe ◽

Electron Beam Induced Current

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Mapping of crystal defects and the minority carrier diffusion length in 6H–SiC using a novel electron beam induced current technique

Journal of Applied Physics ◽

10.1063/1.368578 ◽

1998 ◽

Vol 84 (7) ◽

pp. 3986-3992 ◽

Cited By ~ 12

Author(s):

M. Tabib-Azar ◽

S. M. Hubbard ◽

C. M. Schnabel ◽

S. Bailey

Keyword(s):

Electron Beam ◽

Minority Carrier ◽

Diffusion Length ◽

Crystal Defects ◽

Induced Current ◽

Minority Carrier Diffusion Length ◽

Carrier Diffusion ◽

Current Technique ◽

Electron Beam Induced Current

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Investigation of grain boundaries in BaSi2 epitaxial films on Si(1 1 1) substrates using transmission electron microscopy and electron-beam-induced current technique

Journal of Crystal Growth ◽

10.1016/j.jcrysgro.2012.03.044 ◽

2012 ◽

Vol 348 (1) ◽

pp. 75-79 ◽

Cited By ~ 102

Author(s):

Masakazu Baba ◽

Katsuaki Toh ◽

Kaoru Toko ◽

Noriyuki Saito ◽

Noriko Yoshizawa ◽

...

Keyword(s):

Electron Microscopy ◽

Transmission Electron Microscopy ◽

Electron Beam ◽

Grain Boundaries ◽

Epitaxial Films ◽

Induced Current ◽

Current Technique ◽

Transmission Electron ◽

Electron Beam Induced Current

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Advanced semiconductor diagnosis by multidimensional electron-beam-induced current technique

Scanning ◽

10.1002/sca.20116 ◽

2008 ◽

Vol 30 (4) ◽

pp. 347-353 ◽

Cited By ~ 3

Author(s):

J. Chen ◽

X. Yuan ◽

T. Sekiguchi

Keyword(s):

Electron Beam ◽

Induced Current ◽

Current Technique ◽

Electron Beam Induced Current

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