Investigation of the recombination activity of misfit dislocations in Si/SiGe epilayers by cathodoluminescence imaging and the electron beam induced current technique

1993 ◽  
Vol 63 (15) ◽  
pp. 2085-2087 ◽  
Author(s):  
V. Higgs ◽  
M. Kittler
Keyword(s):  
Electron Beam ◽  
Misfit Dislocations ◽  
Induced Current ◽  
Recombination Activity ◽  
Current Technique ◽  
Electron Beam Induced Current ◽  
Cathodoluminescence Imaging

Modification of Recombination Activity of Dislocations in Si and SiGe by Contamination and Hydrogenation

1995 ◽  
Vol 378 ◽  
Author(s):  
M. Kittler ◽  
W. Seifert ◽  
V. Higgs
Keyword(s):  
Electron Beam ◽  
Low Temperature ◽  
Electrical Activity ◽  
Misfit Dislocations ◽  
Induced Current ◽  
Temperature Dependent ◽  
Recombination Activity ◽  
Dislocation Activity ◽  
Cu Contamination ◽  
Electron Beam Induced Current

AbstractTemperature-dependent (80 … 300 K) measurements of dislocation recombination activity by the electron-beam-induced-current (EBIC) technique are reported. Controlled Cu contamination (ppb to ppm range), chemomechanical polishing and hydrogenation treatments were applied to alter dislocation properties. Increasing Cu level is found not only to increase the electrical activity of misfit dislocations in SiGe/Si structures at 300 K, but also to change its dependence on temperature. At low contamination, shallow centres control dislocation activity while deep centres are characteristic at higher Cu levels. Heavy Cu contamination results in very strong recombination activity which is attributed to precipitates. Chemomechanical polishing has an effect which is analogous to medium Cu contamination. Hydrogenation was found to passivate recombination activity at 300 K, but did not show pronounced effects on activity at low temperature.

scholarly journals Combined SEM Electron-Beam-Induced Current and Cathodoluminescence Imaging and STEM Structural Analysis of GaN Light Emitting Diodes

2006 ◽  
Vol 12 (S02) ◽  
pp. 1514-1515 ◽  
Author(s):  
CM Parish ◽  
CL Progl ◽  
ME Salmon ◽  
PE Russell
Keyword(s):  
Electron Beam ◽  
Structural Analysis ◽  
Light Emitting Diodes ◽  
Induced Current ◽  
Light Emitting ◽  
Electron Beam Induced Current ◽  
Cathodoluminescence Imaging

Extended abstract of a paper presented at Microscopy and Microanalysis 2006 in Chicago, Illinois, USA, July 30 – August 3, 2005

scholarly journals Electron-Beam-Induced Current and Cathodoluminescence Study of Dislocations in SrTiO3

Crystals ◽  
2020 ◽  
Vol 10 (9) ◽  
pp. 736
Author(s):  
Wei Yi ◽  
Jun Chen ◽  
Takashi Sekiguchi
Keyword(s):  
Electron Beam ◽  
Resistive Switching ◽  
Oxygen Vacancies ◽  
Energy Levels ◽  
Induced Current ◽  
Temperature Dependent ◽  
Recombination Activity ◽  
Defect Energy ◽  
Electron Beam Induced Current ◽  
Cathodoluminescence Study

Electron-beam-induced current (EBIC) and cathodoluminescence (CL) have been applied to investigate the electrical and optical behaviors of dislocations in SrTiO3. The electrical recombination activity and defect energy levels of dislocations have been deduced from the temperature-dependent EBIC measurement. Dislocations contributed to resistive switching were clarified by bias-dependent EBIC. The distribution of oxygen vacancies around dislocations has been obtained by CL mapping. The correlation between switching, dislocation and oxygen vacancies was discussed.

Electron beam induced current technique using a scanning Auger microprobe

1984 ◽  
Vol 55 (7) ◽  
pp. 1129-1131 ◽  
Author(s):  
T. V. Rao ◽  
V. Dutta ◽  
O. S. Sastry ◽  
K. L. Chopra
Keyword(s):  
Electron Beam ◽  
Induced Current ◽  
Current Technique ◽  
Scanning Auger Microprobe ◽  
Electron Beam Induced Current
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