Mapping of crystal defects and the minority carrier diffusion length in 6H–SiC using a novel electron beam induced current technique

1998 ◽  
Vol 84 (7) ◽  
pp. 3986-3992 ◽  
Author(s):  
M. Tabib-Azar ◽  
S. M. Hubbard ◽  
C. M. Schnabel ◽  
S. Bailey
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