Mapping of crystal defects and the minority carrier diffusion length in 6H–SiC using a novel electron beam induced current technique
2014 ◽
Vol 53
(7)
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pp. 078004
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1998 ◽
Vol 63-64
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pp. 139-146
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1995 ◽
Vol 10
(5)
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pp. 627-633
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