Optical and physicochemical properties of hydrogenated silicon nitride thin films: Effect of the thermal annealing

2017 ◽  
Vol 50 (1) ◽  
pp. 5-12 ◽  
Author(s):  
M. Boulesbaa
2007 ◽  
Vol 51 (5) ◽  
pp. 1659-1662 ◽  
Author(s):  
Kyunghae Kim ◽  
S. K. Dhungel ◽  
J. Yoo ◽  
Sungwook Jung ◽  
D. Mangalaraj ◽  
...  

1992 ◽  
Vol 242 ◽  
Author(s):  
W. L. Warren ◽  
J. Kanicki ◽  
F. C. Rong ◽  
W. R. Buchwald ◽  
M. Harmatz

ABSTRACTThe creation mechanisms of Si and N dangling bond defect centers in amorphous hydrogenated silicon nitride thin films by ultra-violet (UV) illumination are investigated. The creation efficiency and density of Si centers in the N-rich films are independent of illumination temperature, strongly suggesting that the creation mechanism of the spins is electronic in nature, i.e., a charge transfer mechanism. However, our results suggest that the creation of the Si dangling bond in the Si-rich films are different. Last, we find that the creation of the N dangling-bond in N-rich films can be fit to a stretched exponential time dependence, which is characteristic of dispersive charge transport.


2017 ◽  
Vol 642 ◽  
pp. 276-280 ◽  
Author(s):  
Joana Loureiro ◽  
Tiago Mateus ◽  
Sergej Filonovich ◽  
Marisa Ferreira ◽  
Joana Figueira ◽  
...  

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