Copper diffusion in amorphous thin films of 4% phosphorus‐silcate glass and hydrogenated silicon nitride

1992 ◽  
Vol 61 (18) ◽  
pp. 2178-2180 ◽  
Author(s):  
D. Gupta ◽  
K. Vieregge ◽  
K. V. Srikrishnan
Keyword(s):  
Thin Films ◽  
Silicon Nitride ◽  
Copper Diffusion ◽  
Hydrogenated Silicon ◽  
Amorphous Thin Films

Hydrogenated Silicon-Nitride Thin Films as Antireflection and Passivation Coatings for Multicrystalline Silicon Solar Cells

2007 ◽  
Vol 51 (5) ◽  
pp. 1659-1662 ◽  
Author(s):  
Kyunghae Kim ◽  
S. K. Dhungel ◽  
J. Yoo ◽  
Sungwook Jung ◽  
D. Mangalaraj ◽  
...  
Keyword(s):  
Thin Films ◽  
Solar Cells ◽  
Silicon Nitride ◽  
Multicrystalline Silicon ◽  
Silicon Solar Cells ◽  
Hydrogenated Silicon

Optically Induced Paramagnetism in Amorphous Hydrogenated Silicon Nitride Thin Films

1992 ◽  
Vol 242 ◽  
Author(s):  
W. L. Warren ◽  
J. Kanicki ◽  
F. C. Rong ◽  
W. R. Buchwald ◽  
M. Harmatz
Keyword(s):  
Thin Films ◽  
Silicon Nitride ◽  
Ultra Violet ◽  
Dangling Bond ◽  
Hydrogenated Silicon ◽  
Uv Illumination ◽  
Defect Centers ◽  
Amorphous Hydrogenated Silicon ◽  
The Creation ◽  
A Charge

ABSTRACTThe creation mechanisms of Si and N dangling bond defect centers in amorphous hydrogenated silicon nitride thin films by ultra-violet (UV) illumination are investigated. The creation efficiency and density of Si centers in the N-rich films are independent of illumination temperature, strongly suggesting that the creation mechanism of the spins is electronic in nature, i.e., a charge transfer mechanism. However, our results suggest that the creation of the Si dangling bond in the Si-rich films are different. Last, we find that the creation of the N dangling-bond in N-rich films can be fit to a stretched exponential time dependence, which is characteristic of dispersive charge transport.

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