A quantitative model for the bipolar amplification effect: A new method to determine semiconductor/oxide interface state densities

2021 ◽  
Vol 130 (13) ◽  
pp. 134501
Author(s):  
James P. Ashton ◽  
Stephen J. Moxim ◽  
Ashton D. Purcell ◽  
Patrick M. Lenahan ◽  
Jason T. Ryan
Keyword(s):  
Interface State ◽  
Quantitative Model ◽  
New Method ◽  
Oxide Interface ◽  
Amplification Effect ◽  
State Densities ◽  
Bipolar Amplification

Observation of high interface state densities at the silicon/oxide interface for low doped polysilicon/oxide/silicon capacitor structures

1998 ◽  
Vol 38 (2) ◽  
pp. 233-237 ◽  
Author(s):  
C Leveugle ◽  
P.K Hurley ◽  
A Mathewson ◽  
S Moran ◽  
E Sheehan ◽  
...  
Keyword(s):  
Silicon Oxide ◽  
Interface State ◽  
Oxide Interface ◽  
State Densities

Detection of Interfaces States Correlated with Layer-by-Layer Oxidation on Si(100)

1999 ◽  
Vol 592 ◽  
Author(s):  
T. Hattori ◽  
H. Nohira ◽  
Y Teramoto ◽  
N. Watanabe
Keyword(s):  
Surface Roughness ◽  
Oxide Film ◽  
Film Thickness ◽  
Interface State ◽  
State Density ◽  
Layer By Layer ◽  
Oxide Film Thickness ◽  
Maximum Value ◽  
State Densities ◽  
Atomically Flat

ABSTRACTThe interface state densities near the midgap were measured with the progress of oxidation of atomically flat Si(100) surface. It was found that the interface state distribution in Si bandgap changes periodically with the progress of oxidation. Namely, the interface-state density near the midgap of Si exhibits drastic decrease at oxide film thickness where the surface roughness of oxide film takes its minimum value, while that does not exhibit decrease at the oxide film thickness where the surface roughness takes its maximum value. In order to minimize interface state densities the oxide film thickness should be precisely controlled to within an accuracy of 0.02 nm.

Low interface state densities at Al2O3/GaN interfaces formed on vicinal polar and non-polar surfaces

2020 ◽  
Vol 117 (10) ◽  
pp. 102102 ◽  
Author(s):  
Yuto Ando ◽  
Kentaro Nagamatsu ◽  
Manato Deki ◽  
Noriyuki Taoka ◽  
Atsushi Tanaka ◽  
...  
Keyword(s):  
Interface State ◽  
Polar Surfaces ◽  
State Densities

scholarly journals Full Energy Spectra of Interface State Densities for n ‐ and p ‐type MoS 2 Field‐Effect Transistors

2019 ◽  
Vol 29 (49) ◽  
pp. 1904465 ◽  
Author(s):  
Nan Fang ◽  
Satoshi Toyoda ◽  
Takashi Taniguchi ◽  
Kenji Watanabe ◽  
Kosuke Nagashio
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Interface State ◽  
Energy Spectra ◽  
Full Energy ◽  
State Densities ◽  
P Type

Investigation of Si/4H-SiC Hetero-Junction Growth and Electrical Properties

2009 ◽  
Vol 615-617 ◽  
pp. 443-446 ◽  
Author(s):  
Owen J. Guy ◽  
Amador Pérez-Tomás ◽  
Michael R. Jennings ◽  
Michal Lodzinski ◽  
A. Castaing ◽  
...  
Keyword(s):  
Molecular Beam ◽  
Vapour Deposition ◽  
Chemical Vapour ◽  
Physical Nature ◽  
Interface State ◽  
Electron Beam Evaporation ◽  
Layer Transfer ◽  
Mos Devices ◽  
State Densities ◽  
Scanning Electron

This paper describes the growth and characterisation of Si/SiC heterojunction structures. Heterojunction structures are of interest for low on-resistance diodes and as potential solutions to fabricating SiC MOS devices with lower interface state densities. The formation of the Si/SiC heterojunction using Chemical Vapour Deposition (CVD), Molecular Beam Epitaxy (MBE), Electron Beam Evaporation under UHV conditions (EBE-UHV) and Layer Transfer (LT) are reported. The physical nature of Si/SiC structures has been investigated using scanning electron microscopy (SEM). Results of electrical characterisation of the Si/SiC heterojunctions, are also reported. Finally, thermal oxidation of a Si / SiC heterojunction structures has been performed. The C(V) characteristics of the resulting oxides are compared to conventional thermal oxides on SiC.

Evidence of Channel Mobility Anisotropy on 4H-SiC MOSFETs with Low Interface Trap Density

2019 ◽  
Vol 963 ◽  
pp. 473-478 ◽  
Author(s):  
Maria Cabello ◽  
Victor Soler ◽  
Daniel Haasmann ◽  
Josep Montserrat ◽  
Jose Rebollo ◽  
...  
Keyword(s):  
Electric Fields ◽  
Phonon Scattering ◽  
High Mobility ◽  
Interface State ◽  
Channel Mobility ◽  
Optical Phonon Scattering ◽  
Anisotropy Effect ◽  
State Densities ◽  
High Electric Fields ◽  
Small Anisotropy

In this work, we have evaluated 4° off-axis Si face 4H-SiC MOSFETs channel performance along both the [11-20] (perpendicular to steps) and [1-100] (parallel to steps) orientations, to evidence possible anisotropy on Si-face due to roughness scattering effect. Improved gate oxide treatments, allowing low interface state densities and therefore high mobility values, have been used on both NO and N2O annealed gate oxides. With these high channel mobility samples, a small anisotropy effect (up to 10%) can be observed at high electric fields. The anisotropy can be seen both at room and high temperatures. However, the optical phonon scattering is the dominant effect under these biasing conditions.

Improvements on Electrical Properties of Ultra-Thin Silicon Oxides Grown by Microwave Afterglow Oxygen Plasma

1994 ◽  
Vol 347 ◽  
Author(s):  
P. C. Chen ◽  
J. Y. Lin ◽  
H. L. Hwang
Keyword(s):  
Microwave Plasma ◽  
Interface State ◽  
State Density ◽  
Interface State Density ◽  
Breakdown Field ◽  
Silicon Oxides ◽  
Oxide Breakdown ◽  
Thin Silicon ◽  
State Densities ◽  
Plasma Annealing

ABSTRACTFundamental characteristics such as the oxide breakdown fields, oxide charges and interface state density of various ultra-thin silicon oxides (≤ 8 nm) grown by microwave plasma afterglow oxidation at low temperatures (400 °C and 600 °C) were investigated. The effective Oxide charge density of 600 °C as-grown oxide was as low as 6×1010 cm-2. The breakdown fields of the oxides were further enhanced and the interface state densities were reduced by employing fluorination (HF soaked) and low temperature N2O plasma annealing. The breakdown field of the thin oxide grown at 600 °C with 15 min N2O plasma annealing was 12 MV/cm. The reduction of interface state density was about 35% for 600 °C fluorinated oxide. When integrated with poly-gate process, the interface state density was as low as 5×1010 cm-2eV-1.

Reduced interface state densities for remote microwave plasma silicon nitride

1992 ◽  
Vol 70 (10-11) ◽  
pp. 795-798 ◽  
Author(s):  
D. Landheer ◽  
J. A. Bardwell ◽  
I. Sproule ◽  
J. Scott-Thomas ◽  
W. Kwok ◽  
...  
Keyword(s):  
Microwave Plasma ◽  
Field Effect Transistors ◽  
Chemical Vapour ◽  
Depth Profiling ◽  
Interface State ◽  
State Density ◽  
Fixed Charge ◽  
Silicon Substrates ◽  
Plasma Chemical Vapour Deposition ◽  
State Densities

The interface state density and fixed charge density of films of a-Si3N4:H deposited on silicon substrates by remote microwave plasma chemical vapour deposition have been studied as a function of deposition and annealing temperature. Interface state densities (Dit as low as 9 × 1010 cm−2 eV−1 have been obtained for films deposited at 215 °C and annealed for 15 min at 500 °C. The films exhibited positive fixed charge levels (QN/q)> 1013 cm−2, increasing slightly with deposition temperature and decreasing slightly with annealing at temperatures from 500 to 700 °C. Fourier transform infrared spectroscopy and Auger depth profiling were used to study the impurities in the films and at the interface. Metal–insulator–silicon field effect transistors made with these films showed room temperature effective channel hole mobilities of 37 cm2 V−1 s−1.

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