Interface state densities for metal‐nitride‐oxide‐silicon devices

1990 ◽  
Vol 68 (8) ◽  
pp. 4172-4177 ◽  
Author(s):  
Dan Xu ◽  
Vik J. Kapoor
Keyword(s):  
Interface State ◽  
Metal Nitride ◽  
Silicon Devices ◽  
State Densities ◽  
Nitride Oxide

Comment on ‘Metal-nitride–oxide–silicon avalanche-injection memory’

1973 ◽  
Vol 9 (11) ◽  
pp. 252-253 ◽  
Author(s):  
P.J.T. Mellor ◽  
P.J. Dunn
Keyword(s):  
Metal Nitride ◽  
Nitride Oxide

Detection of Interfaces States Correlated with Layer-by-Layer Oxidation on Si(100)

1999 ◽  
Vol 592 ◽  
Author(s):  
T. Hattori ◽  
H. Nohira ◽  
Y Teramoto ◽  
N. Watanabe
Keyword(s):  
Surface Roughness ◽  
Oxide Film ◽  
Film Thickness ◽  
Interface State ◽  
State Density ◽  
Layer By Layer ◽  
Oxide Film Thickness ◽  
Maximum Value ◽  
State Densities ◽  
Atomically Flat

ABSTRACTThe interface state densities near the midgap were measured with the progress of oxidation of atomically flat Si(100) surface. It was found that the interface state distribution in Si bandgap changes periodically with the progress of oxidation. Namely, the interface-state density near the midgap of Si exhibits drastic decrease at oxide film thickness where the surface roughness of oxide film takes its minimum value, while that does not exhibit decrease at the oxide film thickness where the surface roughness takes its maximum value. In order to minimize interface state densities the oxide film thickness should be precisely controlled to within an accuracy of 0.02 nm.

A quantitative model for the bipolar amplification effect: A new method to determine semiconductor/oxide interface state densities

2021 ◽  
Vol 130 (13) ◽  
pp. 134501
Author(s):  
James P. Ashton ◽  
Stephen J. Moxim ◽  
Ashton D. Purcell ◽  
Patrick M. Lenahan ◽  
Jason T. Ryan
Keyword(s):  
Interface State ◽  
Quantitative Model ◽  
New Method ◽  
Oxide Interface ◽  
Amplification Effect ◽  
State Densities ◽  
Bipolar Amplification

Low interface state densities at Al2O3/GaN interfaces formed on vicinal polar and non-polar surfaces

2020 ◽  
Vol 117 (10) ◽  
pp. 102102 ◽  
Author(s):  
Yuto Ando ◽  
Kentaro Nagamatsu ◽  
Manato Deki ◽  
Noriyuki Taoka ◽  
Atsushi Tanaka ◽  
...  
Keyword(s):  
Interface State ◽  
Polar Surfaces ◽  
State Densities

scholarly journals Full Energy Spectra of Interface State Densities for n ‐ and p ‐type MoS 2 Field‐Effect Transistors

2019 ◽  
Vol 29 (49) ◽  
pp. 1904465 ◽  
Author(s):  
Nan Fang ◽  
Satoshi Toyoda ◽  
Takashi Taniguchi ◽  
Kenji Watanabe ◽  
Kosuke Nagashio
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Interface State ◽  
Energy Spectra ◽  
Full Energy ◽  
State Densities ◽  
P Type
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