Effect of surface oxidation on soft x-ray optical properties of ion beam sputter deposited amorphous AlN thin film

2021 ◽  
Vol 130 (19) ◽  
pp. 195302
Author(s):  
Kiranjot ◽  
Mohammed H. Modi
Keyword(s):  
Thin Film ◽  
Optical Properties ◽  
Ion Beam ◽  
Surface Oxidation ◽  
X Ray ◽  
Sputter Deposited ◽  
Effect Of Surface

NIST SRM 2708, Zinc Sulfide Thin Film on Polycarbonate for X-Ray Fluorescence Spectrometry

1992 ◽  
Vol 36 ◽  
pp. 273-278
Author(s):  
P.A. Pella ◽  
W.R. Kelly ◽  
K.E. Murphy ◽  
E.B. Steel ◽  
S.B. Schiller
Keyword(s):  
Thin Film ◽  
Zinc Sulfide ◽  
Ion Beam ◽  
Fluorescence Spectrometry ◽  
Similar Material ◽  
Filter Media ◽  
X Ray ◽  
Sputter Deposited ◽  
Beam Instrument

NIST SRM 2708 is a thin film of zinc sulfide approximately 0.02 μm thick that was sputter deposited on polycarbonate substrates using a NIST ion-beam instrument. It is intended for the standardization of x-ray fluorescence spectrometers, especially for analysis of air particulates or similar material collected on filter media.

Structural and Optical Properties of Al Co-Doped ZnCoO Thin Film

2014 ◽  
Vol 989-994 ◽  
pp. 656-659
Author(s):  
Ping Cao ◽  
Yue Bai
Keyword(s):  
Thin Film ◽  
Optical Properties ◽  
Sol Gel ◽  
X Ray Diffraction ◽  
Structural And Optical Properties ◽  
Al Doping ◽  
X Ray ◽  
Uv Emission ◽  
Uv Absorption Spectroscopy ◽  
Co Doped

Al co-doped ZnCoO thin film has been prepared by a sol-gel method. The structural and optical properties of the sample were investigated. X-ray diffraction and UV absorption spectroscopy analyses indicate that Al3+ and Co2+ substitute for Zn2+ without changing the wurtzite structure. With the Al doping, the visible emission increased and the UV emission decreased, which is attributed to the increase of O vacancies and Zn interstitials.

Influence of spin orbit splitting and satellite transitions on nickel soft X-ray optical properties near its L 2,3 absorption edge region

2020 ◽  
Vol 27 (6) ◽  
pp. 1633-1639
Author(s):  
Kiranjot ◽  
Mohammed H. Modi ◽  
Raj Kumar Gupta ◽  
Mangalika Sinha ◽  
Praveen Kumar Yadav
Keyword(s):  
Absorption Spectra ◽  
Ion Beam ◽  
Optical Spectra ◽  
Edge Region ◽  
Transition Elements ◽  
Orbit Splitting ◽  
Spin Orbital ◽  
X Ray ◽  
Sputter Deposited ◽  
Reflectivity Data

Transition elements exhibit strong correlations and configuration interactions between core and valence excited states, which give rise to different excitations inside materials. Nickel exhibits satellite features in its emission and absorption spectra. Effects of such transitions on the optical constants of nickel have not been reported earlier and the available database of Henke et al. does not represent such fine features. In this study, the optical behaviour of ion beam sputter deposited Ni thin film near the L 2,3-edge region is investigated using reflection spectroscopy techniques, and distinct signatures of various transitions are observed. The soft X-ray reflectivity measurements in the 500–1500 eV photon energy region are performed using the soft X-ray reflectivity beamline at the Indus-2 synchrotron radiation source. Kramers–Kronig analysis of the measured reflectivity data exhibit features corresponding to spin orbital splitting and satellite transitions in the real and imaginary part of the refractive index (refraction and absorption spectra). Details of fine features observed in the optical spectra are discussed. To the best of our knowledge, this is the first study reporting fine features in the measured optical spectra of Ni near its L 2,3-edge region.

Effect of annealing on the optical properties of the ion beam sputtered NiO thin film

2017 ◽  
Author(s):  
Romita Chouhan ◽  
Priyanka Baraskar ◽  
Tanveer A. Dar ◽  
Arpana Agrawal ◽  
Mukul Gupta ◽  
...  
Keyword(s):  
Thin Film ◽  
Optical Properties ◽  
Ion Beam ◽  
Nio Thin Film

scholarly journals Superconducting YBaCuO thin Films by Cu-Ion Implantation

1990 ◽  
Vol 201 ◽  
Author(s):  
Kevin M. Hubbard ◽  
Nicole Bordes ◽  
Michael Nastasi ◽  
Joseph R. Tesmer
Keyword(s):  
Thin Film ◽  
Electron Microscopy ◽  
Thin Films ◽  
Scanning Electron Microscopy ◽  
Ion Implantation ◽  
Normal State ◽  
Ion Beam ◽  
X Ray Diffraction ◽  
X Ray ◽  
Scanning Electron

AbstractWe have investigated the fabrication of thin-film superconductors by Cu-ion implantation into initially Cu-deficient Y(BaF2)Cu thin films. The precursor films were co-evaporated on SrTiO3 substrates, and subsequently implanted to various doses with 400 keV 63Cu2+. Implantations were preformed at both LN2 temperature and at 380°C. The films were post-annealed in oxygen, and characterized as a function of dose by four-point probe analysis, X-ray diffraction, ion-beam backscattering and channeling, and scanning electron microscopy. It was found that a significant improvement in film quality could be achieved by heating the films to 380°C during the implantation. The best films became fully superconducting at 60–70 K, and exhibited good metallic R vs. T. behavior in the normal state.

Effect of Thickness Affecting Optical Properties of Ge Thin Film Preparing by Ultra Vacuum Ion Beam Sputtering

2010 ◽  
Vol 57 (5B) ◽  
pp. 1197-1199 ◽  
Author(s):  
Yen-Hsun Su ◽  
Sheng-Lung Tu ◽  
Ho-Tung Lin ◽  
Chun-Chieh Huang
Keyword(s):  
Thin Film ◽  
Optical Properties ◽  
Ion Beam ◽  
Ion Beam Sputtering ◽  
Beam Sputtering

Optical Properties and X-ray Absorption Fine Structure Analysis of ZnS:Cu,Cl Thin-Film Phosphors

2010 ◽  
Vol 49 (8) ◽  
pp. 082602 ◽  
Author(s):  
Kunio Ichino ◽  
Haruki Kato ◽  
Yuichiro Sakai ◽  
Koutoku Ohmi ◽  
Tetsuo Honma ◽  
...  
Keyword(s):  
Thin Film ◽  
Optical Properties ◽  
Fine Structure ◽  
Structure Analysis ◽  
X Ray ◽  
Absorption Fine ◽  
Fine Structure Analysis ◽  
X Ray Absorption

Principal Residual Strains as A function of Depth for Sputter Deposited Mo Thin Films

1994 ◽  
Vol 356 ◽  
Author(s):  
S. G. Malhotra ◽  
Z. U. Rek ◽  
L. J. Parfitt ◽  
S. M. Yalisove ◽  
J. C. Bilello
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Grazing Incidence ◽  
X Ray ◽  
X Ray Scattering ◽  
Out Of Plane ◽  
Residual Strains ◽  
Sputter Deposited ◽  
Film Substrate ◽  
Principal Strains

AbstractTraditionally, the magnitude of the stress in a thin film is obtained by measuring the curvature of the film-substrate couple; however, these techniques all measure the average stress throughout the film thickness. On a microscopic level, the details of the strain distribution as a function of depth through the thickness of the film can have important consequences in governing film quality and ultimate morphology. A new method for determining the magnitude of principal strains (strain eigenvalues) as a function of x-ray penetration depth using grazing incidence x-ray scattering for a polycrystalline thin film will be described. Results are reported for two Mo metallizations ˜ 500 Å and ˜1000 Å thick sputtered onto Si {100} substrates. The magnitude of the principal strains at several penetration depths was accomplished by an analysis of the diffraction peak shifts of at least six independent {hkl} scattering vectors from the Mo thin films. An out-of-plane strain gradient was identified in both Mo films and the strain eigenvalues were found to be anisotropic in nature. This new methodology should work with a variety of thin films and hence would provide quantitative insight into the evolution of thin film microstructure.

In situ fixed angle X-ray reflectivity study of sputter-deposited amorphous LaNiO3 thin film on Si substrate

1998 ◽  
Vol 248 (1-4) ◽  
pp. 109-114 ◽  
Author(s):  
Chih-Hao Lee ◽  
Hsin-Yi Lee ◽  
K.S. Liang ◽  
Tai-Bor Wu
Keyword(s):  
Thin Film ◽  
Si Substrate ◽  
Fixed Angle ◽  
X Ray ◽  
Sputter Deposited

Optical properties of dense thin‐film Si and Ge prepared by ion‐beam sputtering

1985 ◽  
Vol 58 (2) ◽  
pp. 954-957 ◽  
Author(s):  
R. W. Collins ◽  
H. Windischmann ◽  
J. M. Cavese ◽  
J. Gonzalez‐Hernandez
Keyword(s):  
Thin Film ◽  
Optical Properties ◽  
Ion Beam ◽  
Ion Beam Sputtering ◽  
Beam Sputtering
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