An atomic hydrogen etching sensor for H2 plasma diagnostics

2021 ◽  
Vol 92 (6) ◽  
pp. 063518
Author(s):  
D. P. J. van Leuken ◽  
C. A. de Meijere ◽  
R. van der Horst ◽  
V. Y. Banine ◽  
E. A. Osorio ◽  
...  
Keyword(s):  
Plasma Diagnostics ◽  
Atomic Hydrogen ◽  
Hydrogen Etching

6H- AND 4H-SiC(0001) Si SURFACE RICHNESS DOSING BY HYDROGEN ETCHING: A WAY TO REDUCE THE FORMATION TEMPERATURE OF RECONSTRUCTIONS

2003 ◽  
Vol 10 (01) ◽  
pp. 55-63 ◽  
Author(s):  
M. DIANI ◽  
J. DIOURI ◽  
L. KUBLER ◽  
L. SIMON ◽  
D. AUBEL ◽  
...  
Keyword(s):  
High Temperature ◽  
Atomic Hydrogen ◽  
Room Temperature ◽  
Binary Systems ◽  
Temperature Treatment ◽  
Heating Time ◽  
High Temperature Treatment ◽  
Formation Temperature ◽  
Hydrogen Etching ◽  
Chemical Surface

In 6H- or 4H-SiC(0001) surface technology, a Si-rich 3 × 3 reconstruction is usually first prepared by heating at 800°C under Si flux, and two other most stable [Formula: see text] or [Formula: see text] reconstructions are obtained by further extensive annealing at higher temperatures ranging between 900 and 1250°C. The 3 × 3 Si excess is thus progressively depleted up to a graphitized C-rich surface. By crystallographic (LEED) and chemical surface characterizations (XPS and UPS), we show that all these reconstructions can be obtained at a unique, low formation temperature of 800°C if the Si richness is controlled before annealing. This control is achieved by exposing the 3 × 3 surface to atomic hydrogen at room temperature. This procedure allows one to etch or partially deplete the (3 × 3)-associated Si excess, and make it more comparable to the final Si coverages, required to form the less Si-rich [Formula: see text] or [Formula: see text] reconstructions. After annealing at 800°C, the latter reconstructions are no longer determined by the heating time or temperature but only by the initial Si coverage set by the H doses inducing the low temperature etching. The high temperature treatment, required to remove by sublimation a significant Si amount associated with the Si-rich 3 × 3 reconstruction, is thus avoided. Such a methodology could be applied to other binary systems in the formation of reconstructions that depends on surface richness.

Kinetic study of atomic hydrogen etching of GaAs (100)

1995 ◽  
Vol 77 (5) ◽  
pp. 2155-2159 ◽  
Author(s):  
John W. Elzey ◽  
Paul F. A. Meharg ◽  
Elmer A. Ogryzlo
Keyword(s):  
Kinetic Study ◽  
Atomic Hydrogen ◽  
Hydrogen Etching

Sharp n-type doping profiles in Si/SiGe heterostructures produced by atomic hydrogen etching

2006 ◽  
Vol 600 (11) ◽  
pp. 2288-2292 ◽  
Author(s):  
J. Zhang ◽  
S.G. Turner ◽  
S.Y. Chiam ◽  
R. Liu ◽  
E.S. Tok ◽  
...  
Keyword(s):  
Atomic Hydrogen ◽  
Hydrogen Etching ◽  
Doping Profiles

In situ ellipsometry study of atomic hydrogen etching of extreme ultraviolet induced carbon layers

2011 ◽  
Vol 258 (1) ◽  
pp. 7-12 ◽  
Author(s):  
Juequan Chen ◽  
Eric Louis ◽  
Rob Harmsen ◽  
Tim Tsarfati ◽  
Herbert Wormeester ◽  
...  
Keyword(s):  
Atomic Hydrogen ◽  
Extreme Ultraviolet ◽  
Hydrogen Etching

Inhibition of atomic hydrogen etching of Si(111) by boron doping

1991 ◽  
Vol 70 (6) ◽  
pp. 2954-2957 ◽  
Author(s):  
P. J. Chen ◽  
M. L. Colaianni ◽  
J. T. Yates
Keyword(s):  
Atomic Hydrogen ◽  
Boron Doping ◽  
Hydrogen Etching

Atomic hydrogen etching of silicon-incorporated diamond-like carbon films prepared by pulsed laser deposition

2009 ◽  
Vol 18 (5-8) ◽  
pp. 831-834 ◽  
Author(s):  
H. Nakazawa ◽  
H. Sugita ◽  
Y. Enta ◽  
M. Suemitsu ◽  
K. Yasui ◽  
...  
Keyword(s):  
Pulsed Laser Deposition ◽  
Atomic Hydrogen ◽  
Pulsed Laser ◽  
Carbon Films ◽  
Laser Deposition ◽  
Diamond Like Carbon ◽  
Hydrogen Etching

scholarly journals Atomic and electronic structure of bismuth-bilayer-terminatedBi2Se3(0001) prepared by atomic hydrogen etching

2015 ◽  
Vol 91 (20) ◽  
Author(s):  
Roozbeh Shokri ◽  
Holger L. Meyerheim ◽  
Sumalay Roy ◽  
Katayoon Mohseni ◽  
A. Ernst ◽  
...  
Keyword(s):  
Electronic Structure ◽  
Atomic Hydrogen ◽  
Hydrogen Etching ◽  
Atomic And Electronic Structure

Preparation and Optical Properties of Ultrathin Silicon Films

1994 ◽  
Vol 358 ◽  
Author(s):  
R. W. Collins ◽  
Hien V. Nguyen ◽  
Ilsin An ◽  
Yiwei Lu ◽  
M. Wakagi
Keyword(s):  
Vapor Deposition ◽  
Atomic Hydrogen ◽  
Quantum Confinement ◽  
Cluster Size ◽  
Crystalline Silicon ◽  
Chemical Vapor ◽  
Mean Free Path ◽  
Hydrogen Etching ◽  
Electron Mean Free Path

ABSTRACTUltrathin crystalline silicon (c-Si) and amorphous silicon (a-Si:H) films have been prepared using plasma-enhanced chemical vapor deposition (PECVD) and atomic hydrogen etching methods. The complex dielectric functions (2 < hv < 4.5 eV) of films consisting of isolated clusters have been measured in situ and in real time using spectroscopic ellipsometry. For 12 Å c-Si cluster films, a sharp absorption onset is observed near 3 eV that blue-shifts with decreasing thickness, in consistency with the quantum confinement of electrons. A much broader absorption onset, observed for ∼13 Å a-Si:H cluster films near 2 eV, is attributed to an electron mean free path that is less than the cluster size, which limits the appearance of confinement effects.

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