Sharp n-type doping profiles in Si/SiGe heterostructures produced by atomic hydrogen etching

2006 ◽  
Vol 600 (11) ◽  
pp. 2288-2292 ◽  
Author(s):  
J. Zhang ◽  
S.G. Turner ◽  
S.Y. Chiam ◽  
R. Liu ◽  
E.S. Tok ◽  
...  
Keyword(s):  
Atomic Hydrogen ◽  
Hydrogen Etching ◽  
Doping Profiles

6H- AND 4H-SiC(0001) Si SURFACE RICHNESS DOSING BY HYDROGEN ETCHING: A WAY TO REDUCE THE FORMATION TEMPERATURE OF RECONSTRUCTIONS

2003 ◽  
Vol 10 (01) ◽  
pp. 55-63 ◽  
Author(s):  
M. DIANI ◽  
J. DIOURI ◽  
L. KUBLER ◽  
L. SIMON ◽  
D. AUBEL ◽  
...  
Keyword(s):  
High Temperature ◽  
Atomic Hydrogen ◽  
Room Temperature ◽  
Binary Systems ◽  
Temperature Treatment ◽  
Heating Time ◽  
High Temperature Treatment ◽  
Formation Temperature ◽  
Hydrogen Etching ◽  
Chemical Surface

In 6H- or 4H-SiC(0001) surface technology, a Si-rich 3 × 3 reconstruction is usually first prepared by heating at 800°C under Si flux, and two other most stable [Formula: see text] or [Formula: see text] reconstructions are obtained by further extensive annealing at higher temperatures ranging between 900 and 1250°C. The 3 × 3 Si excess is thus progressively depleted up to a graphitized C-rich surface. By crystallographic (LEED) and chemical surface characterizations (XPS and UPS), we show that all these reconstructions can be obtained at a unique, low formation temperature of 800°C if the Si richness is controlled before annealing. This control is achieved by exposing the 3 × 3 surface to atomic hydrogen at room temperature. This procedure allows one to etch or partially deplete the (3 × 3)-associated Si excess, and make it more comparable to the final Si coverages, required to form the less Si-rich [Formula: see text] or [Formula: see text] reconstructions. After annealing at 800°C, the latter reconstructions are no longer determined by the heating time or temperature but only by the initial Si coverage set by the H doses inducing the low temperature etching. The high temperature treatment, required to remove by sublimation a significant Si amount associated with the Si-rich 3 × 3 reconstruction, is thus avoided. Such a methodology could be applied to other binary systems in the formation of reconstructions that depends on surface richness.

An atomic hydrogen etching sensor for H2 plasma diagnostics

2021 ◽  
Vol 92 (6) ◽  
pp. 063518
Author(s):  
D. P. J. van Leuken ◽  
C. A. de Meijere ◽  
R. van der Horst ◽  
V. Y. Banine ◽  
E. A. Osorio ◽  
...  
Keyword(s):  
Plasma Diagnostics ◽  
Atomic Hydrogen ◽  
Hydrogen Etching

Atomic hydrogen for the formation of abrupt Sb doping profiles in MBE-grown Si

1998 ◽  
Vol 321 (1-2) ◽  
pp. 120-124 ◽  
Author(s):  
P.E Thompson ◽  
C Silvestre ◽  
M Twigg ◽  
G Jernigan ◽  
D.S Simons
Keyword(s):  
Atomic Hydrogen ◽  
Sb Doping ◽  
Doping Profiles

Kinetic study of atomic hydrogen etching of GaAs (100)

1995 ◽  
Vol 77 (5) ◽  
pp. 2155-2159 ◽  
Author(s):  
John W. Elzey ◽  
Paul F. A. Meharg ◽  
Elmer A. Ogryzlo
Keyword(s):  
Kinetic Study ◽  
Atomic Hydrogen ◽  
Hydrogen Etching

The Formation of Abrupt N+ Doping Profiles Using Atomic Hydrogen and Sb During Si MBE

1998 ◽  
Vol 533 ◽  
Author(s):  
P.E. Thompson ◽  
C. Silvestre ◽  
M. Twigg ◽  
G. Jernigan ◽  
D.S. Simons
Keyword(s):  
Atomic Hydrogen ◽  
Molecular Beam ◽  
Secondary Ion Mass Spectrometry ◽  
Molecular Beam Epitaxy Growth ◽  
Atomic Concentration ◽  
Hall Measurements ◽  
N Doping ◽  
Sb Doping ◽  
Doping Profiles ◽  
Secondary Ion

AbstractPreviously, atomic hydrogen has been shown to be effective in reducing the segregation of Sb on Si(100) during solid source molecular beam epitaxy growth. In this work we have investigated the electrical activation of the Sb. Using Hall measurements, spreading resistance profilometry, and secondary ion mass spectrometry, we have demonstrated that the co-deposition of atomic hydrogen during Sb doping of Si at 500°C produced well-defined doping spikes. Comparing the sheet carrier concentration obtained by Hall measurements to the Sb atomic concentration obtained by SIMS, the overall activation of the Sb was greater than 50%.

In situ ellipsometry study of atomic hydrogen etching of extreme ultraviolet induced carbon layers

2011 ◽  
Vol 258 (1) ◽  
pp. 7-12 ◽  
Author(s):  
Juequan Chen ◽  
Eric Louis ◽  
Rob Harmsen ◽  
Tim Tsarfati ◽  
Herbert Wormeester ◽  
...  
Keyword(s):  
Atomic Hydrogen ◽  
Extreme Ultraviolet ◽  
Hydrogen Etching

Inhibition of atomic hydrogen etching of Si(111) by boron doping

1991 ◽  
Vol 70 (6) ◽  
pp. 2954-2957 ◽  
Author(s):  
P. J. Chen ◽  
M. L. Colaianni ◽  
J. T. Yates
Keyword(s):  
Atomic Hydrogen ◽  
Boron Doping ◽  
Hydrogen Etching

Atomic hydrogen etching of silicon-incorporated diamond-like carbon films prepared by pulsed laser deposition

2009 ◽  
Vol 18 (5-8) ◽  
pp. 831-834 ◽  
Author(s):  
H. Nakazawa ◽  
H. Sugita ◽  
Y. Enta ◽  
M. Suemitsu ◽  
K. Yasui ◽  
...  
Keyword(s):  
Pulsed Laser Deposition ◽  
Atomic Hydrogen ◽  
Pulsed Laser ◽  
Carbon Films ◽  
Laser Deposition ◽  
Diamond Like Carbon ◽  
Hydrogen Etching
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