Inhibition of atomic hydrogen etching of Si(111) by boron doping

1991 ◽  
Vol 70 (6) ◽  
pp. 2954-2957 ◽  
Author(s):  
P. J. Chen ◽  
M. L. Colaianni ◽  
J. T. Yates
Keyword(s):  
Atomic Hydrogen ◽  
Boron Doping ◽  
Hydrogen Etching

6H- AND 4H-SiC(0001) Si SURFACE RICHNESS DOSING BY HYDROGEN ETCHING: A WAY TO REDUCE THE FORMATION TEMPERATURE OF RECONSTRUCTIONS

2003 ◽  
Vol 10 (01) ◽  
pp. 55-63 ◽  
Author(s):  
M. DIANI ◽  
J. DIOURI ◽  
L. KUBLER ◽  
L. SIMON ◽  
D. AUBEL ◽  
...  
Keyword(s):  
High Temperature ◽  
Atomic Hydrogen ◽  
Room Temperature ◽  
Binary Systems ◽  
Temperature Treatment ◽  
Heating Time ◽  
High Temperature Treatment ◽  
Formation Temperature ◽  
Hydrogen Etching ◽  
Chemical Surface

In 6H- or 4H-SiC(0001) surface technology, a Si-rich 3 × 3 reconstruction is usually first prepared by heating at 800°C under Si flux, and two other most stable [Formula: see text] or [Formula: see text] reconstructions are obtained by further extensive annealing at higher temperatures ranging between 900 and 1250°C. The 3 × 3 Si excess is thus progressively depleted up to a graphitized C-rich surface. By crystallographic (LEED) and chemical surface characterizations (XPS and UPS), we show that all these reconstructions can be obtained at a unique, low formation temperature of 800°C if the Si richness is controlled before annealing. This control is achieved by exposing the 3 × 3 surface to atomic hydrogen at room temperature. This procedure allows one to etch or partially deplete the (3 × 3)-associated Si excess, and make it more comparable to the final Si coverages, required to form the less Si-rich [Formula: see text] or [Formula: see text] reconstructions. After annealing at 800°C, the latter reconstructions are no longer determined by the heating time or temperature but only by the initial Si coverage set by the H doses inducing the low temperature etching. The high temperature treatment, required to remove by sublimation a significant Si amount associated with the Si-rich 3 × 3 reconstruction, is thus avoided. Such a methodology could be applied to other binary systems in the formation of reconstructions that depends on surface richness.

An atomic hydrogen etching sensor for H2 plasma diagnostics

2021 ◽  
Vol 92 (6) ◽  
pp. 063518
Author(s):  
D. P. J. van Leuken ◽  
C. A. de Meijere ◽  
R. van der Horst ◽  
V. Y. Banine ◽  
E. A. Osorio ◽  
...  
Keyword(s):  
Plasma Diagnostics ◽  
Atomic Hydrogen ◽  
Hydrogen Etching

Kinetic study of atomic hydrogen etching of GaAs (100)

1995 ◽  
Vol 77 (5) ◽  
pp. 2155-2159 ◽  
Author(s):  
John W. Elzey ◽  
Paul F. A. Meharg ◽  
Elmer A. Ogryzlo
Keyword(s):  
Kinetic Study ◽  
Atomic Hydrogen ◽  
Hydrogen Etching

Sharp n-type doping profiles in Si/SiGe heterostructures produced by atomic hydrogen etching

2006 ◽  
Vol 600 (11) ◽  
pp. 2288-2292 ◽  
Author(s):  
J. Zhang ◽  
S.G. Turner ◽  
S.Y. Chiam ◽  
R. Liu ◽  
E.S. Tok ◽  
...  
Keyword(s):  
Atomic Hydrogen ◽  
Hydrogen Etching ◽  
Doping Profiles

In situ ellipsometry study of atomic hydrogen etching of extreme ultraviolet induced carbon layers

2011 ◽  
Vol 258 (1) ◽  
pp. 7-12 ◽  
Author(s):  
Juequan Chen ◽  
Eric Louis ◽  
Rob Harmsen ◽  
Tim Tsarfati ◽  
Herbert Wormeester ◽  
...  
Keyword(s):  
Atomic Hydrogen ◽  
Extreme Ultraviolet ◽  
Hydrogen Etching

Counteracting Effects of Boron and Hydrogen on Ductility In Ni3Al

1994 ◽  
Vol 364 ◽  
Author(s):  
T. K. Chaki
Keyword(s):  
Hydrogen Embrittlement ◽  
Grain Boundaries ◽  
Atomic Hydrogen ◽  
Boron Doping ◽  
Minute Amount ◽  
Dislocation Activity ◽  
Environmental Embrittlement ◽  
Crack Tips ◽  
Directional Bonding ◽  
Cathodic Charging

AbstractA minute amount of boron doping in polycrystalline Ni3Al can suppress embrit-tlement due to environmental moisture. However, B is ineffective in suppressing hydrogen embrittlement due to cathodic charging. A mechanism is proposed to explain this seemingly contradictory dichotomy. Grain boundaries in B-free Ni3Al contain crack-like microcavities, to the tips of which atomic hydrogen, generated by the reaction of moisture with Al, can diffuse and cause embrittlement. In B-doped Ni3Al interstitial B atoms interact with Ni atoms and reduce the strength of directional bonding between Ni and Al atoms, such that the atoms can relax easily to close up the microcavities, thereby reducing environmental embrittlement. In the presence of a large amount of hydrogen, introduced by cathodic charging, microcracks can be nucleated in B-doped Ni3Al by hydrogen-enhanced dislocation activity, and then hydrogen embrittlement can proceed by enhanced plasticity at the crack tips.

Atomic hydrogen etching of silicon-incorporated diamond-like carbon films prepared by pulsed laser deposition

2009 ◽  
Vol 18 (5-8) ◽  
pp. 831-834 ◽  
Author(s):  
H. Nakazawa ◽  
H. Sugita ◽  
Y. Enta ◽  
M. Suemitsu ◽  
K. Yasui ◽  
...  
Keyword(s):  
Pulsed Laser Deposition ◽  
Atomic Hydrogen ◽  
Pulsed Laser ◽  
Carbon Films ◽  
Laser Deposition ◽  
Diamond Like Carbon ◽  
Hydrogen Etching

scholarly journals Atomic and electronic structure of bismuth-bilayer-terminatedBi2Se3(0001) prepared by atomic hydrogen etching

2015 ◽  
Vol 91 (20) ◽  
Author(s):  
Roozbeh Shokri ◽  
Holger L. Meyerheim ◽  
Sumalay Roy ◽  
Katayoon Mohseni ◽  
A. Ernst ◽  
...  
Keyword(s):  
Electronic Structure ◽  
Atomic Hydrogen ◽  
Hydrogen Etching ◽  
Atomic And Electronic Structure
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