scholarly journals Atomic and electronic structure of bismuth-bilayer-terminatedBi2Se3(0001) prepared by atomic hydrogen etching

2015 ◽  
Vol 91 (20) ◽  
Author(s):  
Roozbeh Shokri ◽  
Holger L. Meyerheim ◽  
Sumalay Roy ◽  
Katayoon Mohseni ◽  
A. Ernst ◽  
...  
Keyword(s):  
Electronic Structure ◽  
Atomic Hydrogen ◽  
Hydrogen Etching ◽  
Atomic And Electronic Structure

Room temperature observation of the correlation between atomic and electronic structure of graphene on Cu(110)

RSC Advances ◽  
2016 ◽  
Vol 6 (100) ◽  
pp. 98001-98009 ◽  
Author(s):  
Thais Chagas ◽  
Thiago H. R. Cunha ◽  
Matheus J. S. Matos ◽  
Diogo D. dos Reis ◽  
Karolline A. S. Araujo ◽  
...  
Keyword(s):  
Electronic Structure ◽  
Chemical Vapor Deposition ◽  
Scanning Tunneling Microscopy ◽  
Vapor Deposition ◽  
Room Temperature ◽  
Chemical Vapor ◽  
Scanning Tunneling ◽  
Tunneling Microscopy ◽  
Temperature Observation ◽  
Atomic And Electronic Structure

We have used atomically-resolved scanning tunneling microscopy and spectroscopy to study the interplay between the atomic and electronic structure of graphene formed on copper via chemical vapor deposition.

Atomic and electronic structure of amorphous Al–Zr alloy films

2011 ◽  
Vol 23 (26) ◽  
pp. 265503 ◽  
Author(s):  
J Vegelius ◽  
I L Soroka ◽  
P T Korelis ◽  
B Hjörvarsson ◽  
S M Butorin
Keyword(s):  
Electronic Structure ◽  
Alloy Films ◽  
Atomic And Electronic Structure ◽  
Zr Alloy

6H- AND 4H-SiC(0001) Si SURFACE RICHNESS DOSING BY HYDROGEN ETCHING: A WAY TO REDUCE THE FORMATION TEMPERATURE OF RECONSTRUCTIONS

2003 ◽  
Vol 10 (01) ◽  
pp. 55-63 ◽  
Author(s):  
M. DIANI ◽  
J. DIOURI ◽  
L. KUBLER ◽  
L. SIMON ◽  
D. AUBEL ◽  
...  
Keyword(s):  
High Temperature ◽  
Atomic Hydrogen ◽  
Room Temperature ◽  
Binary Systems ◽  
Temperature Treatment ◽  
Heating Time ◽  
High Temperature Treatment ◽  
Formation Temperature ◽  
Hydrogen Etching ◽  
Chemical Surface

In 6H- or 4H-SiC(0001) surface technology, a Si-rich 3 × 3 reconstruction is usually first prepared by heating at 800°C under Si flux, and two other most stable [Formula: see text] or [Formula: see text] reconstructions are obtained by further extensive annealing at higher temperatures ranging between 900 and 1250°C. The 3 × 3 Si excess is thus progressively depleted up to a graphitized C-rich surface. By crystallographic (LEED) and chemical surface characterizations (XPS and UPS), we show that all these reconstructions can be obtained at a unique, low formation temperature of 800°C if the Si richness is controlled before annealing. This control is achieved by exposing the 3 × 3 surface to atomic hydrogen at room temperature. This procedure allows one to etch or partially deplete the (3 × 3)-associated Si excess, and make it more comparable to the final Si coverages, required to form the less Si-rich [Formula: see text] or [Formula: see text] reconstructions. After annealing at 800°C, the latter reconstructions are no longer determined by the heating time or temperature but only by the initial Si coverage set by the H doses inducing the low temperature etching. The high temperature treatment, required to remove by sublimation a significant Si amount associated with the Si-rich 3 × 3 reconstruction, is thus avoided. Such a methodology could be applied to other binary systems in the formation of reconstructions that depends on surface richness.

scholarly journals Atomic and electronic structure of a Rashbap–njunction at the BiTeI surface

2014 ◽  
Vol 89 (8) ◽  
Author(s):  
C. Tournier-Colletta ◽  
G. Autès ◽  
B. Kierren ◽  
Ph. Bugnon ◽  
H. Berger ◽  
...  
Keyword(s):  
Electronic Structure ◽  
Atomic And Electronic Structure

An atomic hydrogen etching sensor for H2 plasma diagnostics

2021 ◽  
Vol 92 (6) ◽  
pp. 063518
Author(s):  
D. P. J. van Leuken ◽  
C. A. de Meijere ◽  
R. van der Horst ◽  
V. Y. Banine ◽  
E. A. Osorio ◽  
...  
Keyword(s):  
Plasma Diagnostics ◽  
Atomic Hydrogen ◽  
Hydrogen Etching
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