scholarly journals Offcut-related step-flow and growth rate enhancement during (100) β-Ga2O3 homoepitaxy by metal-exchange catalyzed molecular beam epitaxy (MEXCAT-MBE)

2020 ◽  
Vol 117 (22) ◽  
pp. 222105
Author(s):  
Piero Mazzolini ◽  
Andreas Falkenstein ◽  
Zbigniew Galazka ◽  
Manfred Martin ◽  
Oliver Bierwagen
Keyword(s):  
Growth Rate ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Metal Exchange ◽  
Rate Enhancement ◽  
Step Flow

Laser-Assisted Growth of ZnSe by Metalorganic Molecular Beam Epitaxy

1992 ◽  
Vol 263 ◽  
Author(s):  
C. A. Coronado ◽  
E. Ho ◽  
L. A. Kolodziejski ◽  
C. A. Huber
Keyword(s):  
Growth Rate ◽  
Molecular Beam Epitaxy ◽  
Gas Flow ◽  
Molecular Beam ◽  
Laser Wavelength ◽  
Selective Area Epitaxy ◽  
Rate Enhancement ◽  
Gas Flow Ratio ◽  
Metalorganic Molecular Beam Epitaxy ◽  
Ion Laser

ABSTRACTBy employing metalorganic molecular beam epitaxy (MOMBE), the heteroepitaxy of ZnSe on GaAs has been achieved using diethylselenium and diethylzinc. Significant (10x ∼ 15x) growth rate enhancement has been observed when radiation from an argon ion laser is incident to the surface; photons with energies greater than the bandgap at the growth temperature contribute to the enhancement. Photo-thermal effects are ruled out due to the low power densities used (∼200 mW/cm2). Growth rate enhancementis found to be a function of substrate temperature, VI/II gas flow ratio, laser wavelength and intensity. To further understand the effect of the laser on ZnSe growth, solid sources of Zn and Se are used in conjunction with metalorganic gas sources. The effect of laser illumination is found to depend on the combination of precursors employed: both growth rate enhancement and growth rate suppression are observed. Laser-assisted growth has application for achieving. selective area epitaxy and for tuning the surface stoichiometry.

Insituobservation of growth rate enhancement during gas source molecular beam epitaxy of Si1−xGexalloys on Si(100) surfaces

1992 ◽  
Vol 61 (21) ◽  
pp. 2548-2550 ◽  
Author(s):  
S. M. Mokler ◽  
N. Ohtani ◽  
M. H. Xie ◽  
J. Zhang ◽  
B. A. Joyce
Keyword(s):  
Growth Rate ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Rate Enhancement ◽  
Gas Source

scholarly journals Step-Flow Growth of InN on N-Polarity GaN Template by Molecular Beam Epitaxy with a Growth Rate of 1.3μm/h

2003 ◽  
Vol 0 (1) ◽  
pp. 377-381 ◽  
Author(s):  
K. Xu ◽  
W. Terashima ◽  
T. Hata ◽  
N. Hashimoto ◽  
Y. Ishitani ◽  
...  
Keyword(s):  
Growth Rate ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Step Flow ◽  
Step Flow Growth

scholarly journals Step-flow growth of graphene-boron nitride lateral heterostructures by molecular beam epitaxy

2D Materials ◽  
2020 ◽  
Vol 7 (3) ◽  
pp. 035014 ◽  
Author(s):  
James Thomas ◽  
Jonathan Bradford ◽  
Tin S Cheng ◽  
Alex Summerfield ◽  
James Wrigley ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Boron Nitride ◽  
Molecular Beam ◽  
Step Flow ◽  
Step Flow Growth

Step-flow growth of GaN(0001) on 4H-SiC(0001) by plasma-assisted molecular beam epitaxy

2016 ◽  
Vol 213 (9) ◽  
pp. 2498-2502 ◽  
Author(s):  
Tobias Tingberg ◽  
Anders Larsson ◽  
Tommy Ive
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Step Flow ◽  
Step Flow Growth
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