Insituobservation of growth rate enhancement during gas source molecular beam epitaxy of Si1−xGexalloys on Si(100) surfaces

1992 ◽  
Vol 61 (21) ◽  
pp. 2548-2550 ◽  
Author(s):  
S. M. Mokler ◽  
N. Ohtani ◽  
M. H. Xie ◽  
J. Zhang ◽  
B. A. Joyce
Keyword(s):  
Growth Rate ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Rate Enhancement ◽  
Gas Source

Influence of phosphine flow rate on Si growth rate in gas source molecular beam epitaxy

2000 ◽  
Vol 220 (4) ◽  
pp. 461-465 ◽  
Author(s):  
F. Gao ◽  
D.D. Huang ◽  
J.P. Li ◽  
Y.X. Lin ◽  
M.Y. Kong ◽  
...  
Keyword(s):  
Growth Rate ◽  
Molecular Beam Epitaxy ◽  
Flow Rate ◽  
Molecular Beam ◽  
Gas Source

scholarly journals Offcut-related step-flow and growth rate enhancement during (100) β-Ga2O3 homoepitaxy by metal-exchange catalyzed molecular beam epitaxy (MEXCAT-MBE)

2020 ◽  
Vol 117 (22) ◽  
pp. 222105
Author(s):  
Piero Mazzolini ◽  
Andreas Falkenstein ◽  
Zbigniew Galazka ◽  
Manfred Martin ◽  
Oliver Bierwagen
Keyword(s):  
Growth Rate ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Metal Exchange ◽  
Rate Enhancement ◽  
Step Flow

GaN epilayers grown at high growth rate using gas source molecular beam epitaxy method

1998 ◽  
Vol 191 (1-2) ◽  
pp. 31-33 ◽  
Author(s):  
Xiaobing Li ◽  
Dianzhao Sun ◽  
Jianping Zhang ◽  
Meiying Kong
Keyword(s):  
Growth Rate ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
High Growth ◽  
High Growth Rate ◽  
Gas Source ◽  
Molecular Beam Epitaxy Method

Laser-Assisted Growth of ZnSe by Metalorganic Molecular Beam Epitaxy

1992 ◽  
Vol 263 ◽  
Author(s):  
C. A. Coronado ◽  
E. Ho ◽  
L. A. Kolodziejski ◽  
C. A. Huber
Keyword(s):  
Growth Rate ◽  
Molecular Beam Epitaxy ◽  
Gas Flow ◽  
Molecular Beam ◽  
Laser Wavelength ◽  
Selective Area Epitaxy ◽  
Rate Enhancement ◽  
Gas Flow Ratio ◽  
Metalorganic Molecular Beam Epitaxy ◽  
Ion Laser

ABSTRACTBy employing metalorganic molecular beam epitaxy (MOMBE), the heteroepitaxy of ZnSe on GaAs has been achieved using diethylselenium and diethylzinc. Significant (10x ∼ 15x) growth rate enhancement has been observed when radiation from an argon ion laser is incident to the surface; photons with energies greater than the bandgap at the growth temperature contribute to the enhancement. Photo-thermal effects are ruled out due to the low power densities used (∼200 mW/cm2). Growth rate enhancementis found to be a function of substrate temperature, VI/II gas flow ratio, laser wavelength and intensity. To further understand the effect of the laser on ZnSe growth, solid sources of Zn and Se are used in conjunction with metalorganic gas sources. The effect of laser illumination is found to depend on the combination of precursors employed: both growth rate enhancement and growth rate suppression are observed. Laser-assisted growth has application for achieving. selective area epitaxy and for tuning the surface stoichiometry.

N- and P-Type Doping of ZnSe Using Gas Source Molecular Beam Epitaxy

1994 ◽  
Vol 340 ◽  
Author(s):  
P. A. Fisher ◽  
E. Ho ◽  
J. L. House ◽  
G. S. Petrich ◽  
L. A. Kolodziejski ◽  
...  
Keyword(s):  
Growth Rate ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Secondary Ion Mass Spectrometry ◽  
Nitrogen Plasma ◽  
Gas Source ◽  
Excitonic Transition ◽  
N Incorporation ◽  
P Type ◽  
Donor Species

ABSTRACTHigh quality ZnSe:Cl has been grown on GaAs by gas source molecular beam epitaxy (GSMBE); elemental Zn and H2Se are used as source materials, with ZnCl2 as a dopant source for donors. Atomic Cl concentrations ([Cl]) approaching 1020 cm−3 have been incorporated into the lattice as indicated by secondary ion mass spectrometry (SIMS). At incorporation levels greater than 1020 cm−3, an appreciable decrease in the growth rate has been observed. The sharp transition to a negligible growth rate is attributed to the occurrence of a surface chemical reaction originating from Cl and H which are present in the GSMBE environment. For [Cl] as high as 4 x 1018 cm−3, the films exhibited high crystalline quality, as indicated by photoluminescence originating from a single intense donor-bound excitonic transition. Hydrogenation of semiconductors can potentially result in the electrical passivation of incorporated acceptor and donor species. In the case of ZnSe:Cl, H was present in the ZnSe layers, but did not appear to adversely affect the electrical properties of the n-type films. In contrast, for the growth of ZnSe:N, where a nitrogen plasma cell was employed as a source of nitrogen, the H concentration (as determined by SIMS) was observed to track the N concentration. The ZnSe:N films were highly resistive for various amounts of N incorporation, which suggests that H incorporation is an issue of primary importance in the p-type doping of ZnSe grown by GSMBE.

Transient growth rate change during gas source molecular beam epitaxy of Si1−xGexalloys

1993 ◽  
Vol 62 (17) ◽  
pp. 2042-2044 ◽  
Author(s):  
N. Ohtani ◽  
S. M. Mokler ◽  
M. H. Xie ◽  
J. Zhang ◽  
B. A. Joyce
Keyword(s):  
Growth Rate ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Rate Change ◽  
Transient Growth ◽  
Gas Source
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