Step-flow growth of GaN(0001) on 4H-SiC(0001) by plasma-assisted molecular beam epitaxy

2016 ◽  
Vol 213 (9) ◽  
pp. 2498-2502 ◽  
Author(s):  
Tobias Tingberg ◽  
Anders Larsson ◽  
Tommy Ive
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Step Flow ◽  
Step Flow Growth

scholarly journals Step-flow growth of graphene-boron nitride lateral heterostructures by molecular beam epitaxy

2D Materials ◽  
2020 ◽  
Vol 7 (3) ◽  
pp. 035014 ◽  
Author(s):  
James Thomas ◽  
Jonathan Bradford ◽  
Tin S Cheng ◽  
Alex Summerfield ◽  
James Wrigley ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Boron Nitride ◽  
Molecular Beam ◽  
Step Flow ◽  
Step Flow Growth

Step-Flow Growth of In-Polar InN by Molecular Beam Epitaxy

2006 ◽  
Vol 45 (No. 28) ◽  
pp. L730-L733 ◽  
Author(s):  
Xinqiang Wang ◽  
Song-Bek Che ◽  
Yoshihiro Ishitani ◽  
Akihiko Yoshikawa
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Step Flow ◽  
Step Flow Growth

Development of Anisotropic GaAs (001) Surface Morphology During Molecular Beam Epitaxial Growth

1993 ◽  
Vol 317 ◽  
Author(s):  
Allan J. Pidduck ◽  
G.W. Smith ◽  
A.M. Keir ◽  
C.R. Whitehouse
Keyword(s):  
Molecular Beam Epitaxy ◽  
Surface Morphology ◽  
Molecular Beam ◽  
Step Flow ◽  
Molecular Beam Epitaxial ◽  
Amplitude Increase ◽  
Roughness Amplitude ◽  
Step Density ◽  
Molecular Beam Epitaxial Growth ◽  
Step Flow Growth

ABSTRACTWe have studied the development of a microscopically ridged [110] Morphology during (001) GaAs Molecular beam epitaxy, as a function of layer thickness and growth temperature. The ridge slopes are consistent with the [110] separation required to incorporate a majority of adatoms by step-flow growth. Thus step-flow can be a dominant growth mode even on nominally on-axis (singular) substrates. With increasing epilayer thickness, the ridge slopes, and surface step density, remain approximately constant, while the ridge spacings, and therefore roughness amplitude, increase steadily.

scholarly journals The dynamical transition to step-flow growth during molecular-beam epitaxy of GaAs(00l)

1993 ◽  
Vol 298 (2-3) ◽  
pp. 392-398 ◽  
Author(s):  
M.D. Johnson ◽  
J. Sudijono ◽  
A.W. Hunt ◽  
B.G. Orr
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Dynamical Transition ◽  
Step Flow ◽  
Step Flow Growth

scholarly journals Anisotropic Step-Flow Growth and Island Growth of GaN(0001) by Molecular Beam Epitaxy

1999 ◽  
Vol 82 (13) ◽  
pp. 2749-2752 ◽  
Author(s):  
M. H. Xie ◽  
S. M. Seutter ◽  
W. K. Zhu ◽  
L. X. Zheng ◽  
Huasheng Wu ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Island Growth ◽  
Step Flow ◽  
Step Flow Growth

Effects of hydrogen in AlAs growth by atomic hydrogenassisted molecular beam epitaxy

1999 ◽  
Vol 570 ◽  
Author(s):  
Kee-Youn Jang ◽  
Yoshitaka Okada ◽  
Mitsuo Kawabe
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
High Energy ◽  
Growth Mode ◽  
Flow Mode ◽  
High Energy Electron ◽  
Step Flow ◽  
Gaas Substrates ◽  
Lower Temperature ◽  
Step Flow Growth

ABSTRACTThe transition temperature Tc for the AlAs growth to change from/to a nucleation mode and step-flow mode have been studied on vicinal GaAs substrates (A-surface and B-surface) in molecular beam epitaxy (MBE) and atomic hydrogen-assisted MBE (H-MBE) using reflection high-energy electron diffraction (RHEED). The lowering of Tc was clearly observed in H-MBE compared to conventional MBE. For growth of AlAs on vicinal GaAs substrate in H-MBE, atomic H is thought to promote not only the re-evaporation of Al adatoms on the terrace, but also the incorporation of Al at the step edges, thereby facilitating a step-flow growth mode at a lower temperature than in MBE. The differences in the fundamental growth mode between on A-surface and B-surface have also been studies based on the differences in the atomic structure between the two substrates.

A kinetic model for step flow growth in molecular beam epitaxy

2006 ◽  
Vol 600 (17) ◽  
pp. 3436-3445 ◽  
Author(s):  
Lev Balykov ◽  
Axel Voigt
Keyword(s):  
Molecular Beam Epitaxy ◽  
Kinetic Model ◽  
Molecular Beam ◽  
Step Flow ◽  
Step Flow Growth

scholarly journals Step-Flow Growth of InN on N-Polarity GaN Template by Molecular Beam Epitaxy with a Growth Rate of 1.3μm/h

2003 ◽  
Vol 0 (1) ◽  
pp. 377-381 ◽  
Author(s):  
K. Xu ◽  
W. Terashima ◽  
T. Hata ◽  
N. Hashimoto ◽  
Y. Ishitani ◽  
...  
Keyword(s):  
Growth Rate ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Step Flow ◽  
Step Flow Growth

The Dynamical Transition to Step-Flow Growth During Homoepitaxy of GaAs (001)

1993 ◽  
Vol 312 ◽  
Author(s):  
B. G. Orr ◽  
J. Sudijono ◽  
M. D. Johnson
Keyword(s):  
Scanning Tunneling Microscope ◽  
Molecular Beam ◽  
Scanning Tunneling ◽  
Oscillatory Regime ◽  
Step Flow ◽  
Microscope Images ◽  
Step Density ◽  
Step Flow Growth ◽  
Direct Correspondence ◽  
Density Results

AbstractThe evolution of surface morphology of molecular-beam-epitaxy-grown GaAs (001) has been studied by scanning tunneling microscope. Images show that in the early stages of deposition the morphology oscillates between one -with twodimensional nucleation and coalescing islands, i.e. flat terraces. After the initial oscillatory regime, the system evolves to a dynamical steady state. This state is characterized by a constant step density. As such, the growth mode can be called a generalized step flow. Comparison with RHEED shows that there is a direct correspondence between the surface step density and the RHEED specular intensity. An increase in step density results in a decrease in specular intensity. Additionally, further deposition beyond 120 monolayers (up to 1450 monolayers) display a slowly increasing surface roughness.

Sign in / Sign up

Export Citation Format

Share Document