Impact of O2flow rate on the growth rate of ZnO(0001) and ZnO(0001‾) on GaN by plasma-assisted molecular beam epitaxy

2016 ◽  
Vol 253 (8) ◽  
pp. 1523-1528 ◽  
Author(s):  
David Adolph ◽  
Tommy Ive
Keyword(s):  
Growth Rate ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam

Growth rate effects on the size, composition and optical properties of InAs/GaAs quantum dots grown by molecular beam epitaxy

2001 ◽  
Vol 227-228 ◽  
pp. 1000-1004 ◽  
Author(s):  
P.B Joyce ◽  
T.J Krzyzewski ◽  
G.R Bell ◽  
T.S Jones ◽  
S Malik ◽  
...  
Keyword(s):  
Growth Rate ◽  
Quantum Dots ◽  
Optical Properties ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Size Composition ◽  
Rate Effects

Oxidation of Strained Si-Ge Layers Grown by MBE

1987 ◽  
Vol 102 ◽  
Author(s):  
G.L. Patton ◽  
S.S. Iyer ◽  
S.L. Delage ◽  
E. Ganin ◽  
R.C. Mcintosh
Keyword(s):  
Growth Rate ◽  
Molecular Beam Epitaxy ◽  
Epitaxial Layer ◽  
Molecular Beam ◽  
Fast Growth ◽  
Strained Si ◽  
Substrate Interface ◽  
Growth Regime ◽  
Oxide Substrate ◽  
Strained Sige

ABSTRACTThe oxidation of strained SiGe alloy layers grown by Molecular Beam Epitaxy (MBE) was studied. An initial fast growth regime was identified for 800°C steam oxidations, where the growth rate is 2.5 times that of silicon. The oxides formed on SiGe were found to be essentially Ge-free: Ge present in the material is rejected by the oxide, resulting in the formation of a Ge-rich epitaxial layer at the oxide/substrate interface.

Influence of phosphine flow rate on Si growth rate in gas source molecular beam epitaxy

2000 ◽  
Vol 220 (4) ◽  
pp. 461-465 ◽  
Author(s):  
F. Gao ◽  
D.D. Huang ◽  
J.P. Li ◽  
Y.X. Lin ◽  
M.Y. Kong ◽  
...  
Keyword(s):  
Growth Rate ◽  
Molecular Beam Epitaxy ◽  
Flow Rate ◽  
Molecular Beam ◽  
Gas Source
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