Determination of carrier recombination velocity at inclined grain boundaries in multicrystalline silicon through photoluminescence imaging and carrier simulation

2020 ◽  
Vol 128 (12) ◽  
pp. 125103 ◽  
Author(s):  
Kazuki Mitamura ◽  
Kentaro Kutsukake ◽  
Takuto Kojima ◽  
Noritaka Usami
Keyword(s):  
Grain Boundaries ◽  
Multicrystalline Silicon ◽  
Carrier Recombination ◽  
Recombination Velocity

The Electrical Behavior of Grain Boundaries in Silicon

1982 ◽  
Vol 14 ◽  
Author(s):  
C. H. Seager
Keyword(s):  
Grain Boundaries ◽  
Carrier Transport ◽  
Minority Carrier ◽  
Group Iv ◽  
Zero Bias ◽  
Barrier Heights ◽  
Group Iv Semiconductors ◽  
Carrier Recombination ◽  
Primitive State ◽  
Recombination Velocity

ABSTRACTDespite the fact that lattice imaging studies have shown that grain boundaries in group IV semiconductors often have structures which are complicated and inhomogeneous on the scale of tens-tohundreds of angstroms, simple theories assuming uniform double depletion layers have recently been shown to successfully predict many of the majority carrier transport properties of these defects. On the other hand our knowledge of the interaction of grain boundaries with minority carriers is in a considerably more primitive state. I will describe recent attempts to understand the effects of illumination on grain boundary potential barrier heights and the influence of these defects on the optically generated minority carrier population. Quantifying this latter interaction is particularly important in estimating the performance of polycrystalline solar cells. Simple but elegant scanned excitation measurements for measuring s, the minority carrier recombination velocity at grain boundaries, will be reviewed. I will discuss recent measurements of s as a function of temperature and illumination intensity and show how these data can be correlated with zero-bias impedance measurements.

Carrier Recombination Activities and Structural Properties of Small-Angle Boundaries in Multicrystalline Silicon

2007 ◽  
Vol 131-133 ◽  
pp. 9-14 ◽  
Author(s):  
J. Chen ◽  
Takashi Sekiguchi ◽  
S. Ito ◽  
De Ren Yang
Keyword(s):  
Electron Beam ◽  
Low Temperature ◽  
Grain Boundaries ◽  
Structural Properties ◽  
Tilt Angle ◽  
Small Angle ◽  
Multicrystalline Silicon ◽  
Induced Current ◽  
Carrier Recombination ◽  
Electron Beam Induced Current

The carrier recombination activities of small angle (SA) grain boundaries (GBs) in multicrystalline Si (mc-Si) were systematically investigated by electron-beam-induced current (EBIC). At 300 K, general SA-GBs with tilt angle from 0° to 10° showed weak EBIC contrast (0- 10%) with the maximum appeared at 2°. At low temperature (100 K), all the SA-GBs showed strong EBIC contrast despite the tilt angle. Possible explanations for the variation of the EBIC contrast were discussed in terms of boundary dislocations.

Determination of the lattice translation across {110} APBs in GaAs

1988 ◽  
Vol 46 ◽  
pp. 600-601
Author(s):  
D.R. Rasmussen ◽  
N.-H. Cho ◽  
C.B. Carter
Keyword(s):  
Grain Boundaries ◽  
Lower Energy ◽  
Antiphase Boundary ◽  
The Other ◽  
Boundary Structure ◽  
Interface Plane ◽  
Inversion Symmetry ◽  
High Angle ◽  
Equilibrium Distance

Domains in GaAs can exist which are related to one another by the inversion symmetry, i.e., the sites of gallium and arsenic in one domain are interchanged in the other domain. The boundary between these two different domains is known as an antiphase boundary [1], In the terminology used to describe grain boundaries, the grains on either side of this boundary can be regarded as being Σ=1-related. For the {110} interface plane, in particular, there are equal numbers of GaGa and As-As anti-site bonds across the interface. The equilibrium distance between two atoms of the same kind crossing the boundary is expected to be different from the length of normal GaAs bonds in the bulk. Therefore, the relative position of each grain on either side of an APB may be translated such that the boundary can have a lower energy situation. This translation does not affect the perfect Σ=1 coincidence site relationship. Such a lattice translation is expected for all high-angle grain boundaries as a way of relaxation of the boundary structure.

Light Effects on Grain Boundary Properties in Silicon

1981 ◽  
Vol 5 ◽  
Author(s):  
L. J. Cheng ◽  
C. M. Shyu
Keyword(s):  
Experimental Data ◽  
Grain Boundary ◽  
Minority Carrier ◽  
State Density ◽  
Boundary State ◽  
Carrier Recombination ◽  
Boundary Properties ◽  
Light Effects ◽  
Recombination Velocity ◽  
P Type

ABSTRACTWe have studied the photoconductivity of grain boundaries in p–type silicon. The result demonstrates the applicability of the technique for the measurement of minority carrier recombination velocity at the grain boundary. The experimental data are consistent with the thought that the recombination velocity increases with the boundary state density and light intensity.

IR and MW Absorption Techniques for Bulk and Surface Recombination Control in High-Quaiity Silicon

1995 ◽  
Vol 386 ◽  
Author(s):  
A. Kaniava ◽  
U. Menczigar ◽  
J. Vanhellemont ◽  
J. Poortmans ◽  
A. L. P. Rotondaro ◽  
...  
Keyword(s):  
Surface Recombination ◽  
Surface Recombination Velocity ◽  
Silicon Substrates ◽  
Injection Level ◽  
Effective Lifetime ◽  
Carrier Recombination ◽  
High Injection Level ◽  
High Injection ◽  
Wide Range ◽  
Recombination Velocity

ABSTRACTThe carrier recombination rate in high-quality FZ and Cz silicon substrates is studied by contactless infrared and microwave absorption techniques. Different surface treatments covering a wide range of surface recombination velocity have been used for the separation of bulk and surface recombination components and evaluating of the efficiency of passivation. Limitations of effective lifetime approach are analyzed specific for low and high injection level. Sensitivity limits of the techniques for iron contamination are discussed

Correlation of Fe-Rich Defect Centre and Minority Carrier Lifetime in p-Type Multicrystalline Silicon

2013 ◽  
Vol 440 ◽  
pp. 82-87 ◽  
Author(s):  
Mohammad Jahangir Alam ◽  
Mohammad Ziaur Rahman
Keyword(s):  
Carrier Lifetime ◽  
Minority Carrier ◽  
Minority Carrier Lifetime ◽  
Multicrystalline Silicon ◽  
Recombination Lifetime ◽  
Spatially Resolved ◽  
Carrier Recombination ◽  
Negative Role ◽  
P Type ◽  
The Impact

A comparative study has been made to analyze the impact of interstitial iron in minority carrier lifetime of multicrystalline silicon (mc-Si). It is shown that iron plays a negative role and is considered very detrimental for minority carrier recombination lifetime. The analytical results of this study are aligned with the spatially resolved imaging analysis of iron rich mc-Si.

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