scholarly journals Quantifying carrier recombination at grain boundaries in multicrystalline silicon wafers through photoluminescence imaging

2014 ◽  
Vol 116 (24) ◽  
pp. 244905 ◽  
Author(s):  
H. C. Sio ◽  
T. Trupke ◽  
D. Macdonald
Keyword(s):  
Grain Boundaries ◽  
Silicon Wafers ◽  
Multicrystalline Silicon ◽  
Carrier Recombination

scholarly journals Photoluminescence Analysis of Oxygen Precipitation around Small-Angle Grain Boundaries in Multicrystalline Silicon Wafers

2014 ◽  
Vol 125 (4) ◽  
pp. 1010-1012 ◽  
Author(s):  
G. Kato ◽  
M. Tajima ◽  
F. Okayama ◽  
S. Tokumaru ◽  
R. Sato ◽  
...  
Keyword(s):  
Grain Boundaries ◽  
Small Angle ◽  
Silicon Wafers ◽  
Multicrystalline Silicon ◽  
Oxygen Precipitation

Carrier Recombination Activities and Structural Properties of Small-Angle Boundaries in Multicrystalline Silicon

2007 ◽  
Vol 131-133 ◽  
pp. 9-14 ◽  
Author(s):  
J. Chen ◽  
Takashi Sekiguchi ◽  
S. Ito ◽  
De Ren Yang
Keyword(s):  
Electron Beam ◽  
Low Temperature ◽  
Grain Boundaries ◽  
Structural Properties ◽  
Tilt Angle ◽  
Small Angle ◽  
Multicrystalline Silicon ◽  
Induced Current ◽  
Carrier Recombination ◽  
Electron Beam Induced Current

The carrier recombination activities of small angle (SA) grain boundaries (GBs) in multicrystalline Si (mc-Si) were systematically investigated by electron-beam-induced current (EBIC). At 300 K, general SA-GBs with tilt angle from 0° to 10° showed weak EBIC contrast (0- 10%) with the maximum appeared at 2°. At low temperature (100 K), all the SA-GBs showed strong EBIC contrast despite the tilt angle. Possible explanations for the variation of the EBIC contrast were discussed in terms of boundary dislocations.

scholarly journals Delineation of Crystalline Extended Defects on Multicrystalline Silicon Wafers

2007 ◽  
Vol 2007 ◽  
pp. 1-4 ◽  
Author(s):  
Mohamed Fathi
Keyword(s):  
Grain Boundaries ◽  
Process Parameters ◽  
Silicon Wafers ◽  
Etching Process ◽  
Multicrystalline Silicon ◽  
Extended Defects ◽  
Dislocation Densities ◽  
Increased Sensitivity ◽  
Small Grains ◽  
Crystalline Defect

We have selected Secco and Yang etch solutions for the crystalline defect delineation on multicrystalline silicon (mc-Si) wafers. Following experimentations and optimization of Yang and Secco etching process parameters, we have successfully revealed crystalline extended defects on mc-Si surfaces. A specific delineation process with successive application of Yang and Secco agent on the same sample has proved the increased sensitivity of Secco etch to crystalline extended defects in mc-Si materials. The exploration of delineated mc-Si surfaces indicated that strong dislocation densities are localized mainly close to the grain boundaries and on the level of small grains in size (below 1 mm). Locally, we have observed the formation of several parallel dislocation lines, perpendicular to the grain boundaries. The overlapping of several dislocations lines has revealed particular forms for etched pits of dislocations.

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