Reduced leakage current in Al2O3/TiO2/Al2O3 dielectric stacks grown by pulsed laser deposition

2020 ◽  
Author(s):  
P. S. Padhi ◽  
R. S. Ajimsha ◽  
S. K. Chetia ◽  
Amit K. Das ◽  
Vikas K. Sahu ◽  
...  
Keyword(s):  
Pulsed Laser Deposition ◽  
Leakage Current ◽  
Pulsed Laser ◽  
Laser Deposition

Pulsed Laser Deposition of Bi4Ti3O12 Thin Films on Indium Tin Oxide Coated Glass

1994 ◽  
Vol 343 ◽  
Author(s):  
H-J. Cho ◽  
William Jo ◽  
T. W. Noh
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Leakage Current ◽  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Chemical Compositions ◽  
Coated Glass

ABSTRACTBi4Ti3O12 thin films have been grown on indium tin oxide coated glass by pulsed laser deposition. The films are rapidly thermal annealed at 650 °C in various kinds of ambients. X-ray diffraction and scanning electron microscopy are used to investigate crystallization and microstructures, respectively. Using Auger electron microscopy, chemical compositions and depth profiles are examined. Optical and current-voltage characteristics measurements of the films show that their transmittance and leakage current behaviors are strongly dependent upon the microstructures. O2 partial pressure in the rapid thermal annealing process is found to be an important parameter which determines crystallization, microstructures, and leakage current behaviors of the Bi4Ti3O12 thin films.

Ferroelectric, piezoelectric, and leakage current properties of (K0.48Na0.48Li0.04)(Nb0.775Ta0.225)O3 thin films grown by pulsed laser deposition

2011 ◽  
Vol 98 (2) ◽  
pp. 022902 ◽  
Author(s):  
D. Y. Wang ◽  
D. M. Lin ◽  
K. W. Kwok ◽  
N. Y. Chan ◽  
J. Y. Dai ◽  
...  
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Leakage Current ◽  
Pulsed Laser ◽  
Laser Deposition

Leakage Current Behaviors of SrTiO3/BiFeO3 Multi-Layers Fabricated by Pulsed Laser Deposition

2012 ◽  
Vol 134 (1) ◽  
pp. 133-138 ◽  
Author(s):  
S. W. Kim ◽  
H. I. Choi ◽  
M. H. Lee ◽  
D. Do ◽  
S. S. Kim ◽  
...  
Keyword(s):  
Pulsed Laser Deposition ◽  
Leakage Current ◽  
Pulsed Laser ◽  
Laser Deposition

Growth and Electrical Properties of Fe doped (Ba,Sr)TiO3 Thin Films Deposited by Pulsed Laser Deposition

2001 ◽  
Vol 688 ◽  
Author(s):  
Yoshiyuki Yonezawa ◽  
Megumi Kato ◽  
Yoshinori Konishi ◽  
Shizuyasu Yoshida ◽  
Nobuhiro Okuda ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Pulsed Laser Deposition ◽  
Leakage Current ◽  
Pulsed Laser ◽  
Dielectric Constants ◽  
Laser Deposition ◽  
Fe Doping ◽  
Low Oxygen ◽  
Impurity Effects ◽  
Post Annealing

AbstractImpurity effects were investigated in (Ba,Sr)TiO3 (BST) systems in order to suppress leakage currents under relatively low oxygen pressure conditions by Pulsed Laser Deposition (PLD). We tried to dope transition metals, such as Mo, Mn, Cr, W and Fe into the BST target and used the targets to fabricate the films. By measuring electrical properties, we found Fe-doping had a significant effect on suppressing leakage current. Subsequently, we changed the amount of Fe doping from 0.1mol% to 6%. As a result, with post annealing, the sample with Fe:4% showed the lowest leakage current among those analyzed. Even without post annealing, the sample with Fe:6% showed the lowest leakage current. As for the dielectric constants, they decreased as the doping increased. At most, a 30% reduction was observed, compared with non-doped BST. XANES (X-ray Absorption Near Edge Structures) results indicated that the valency of the Fe ion was 3+ and located at the B-site of BST.

Structural and physical properties of Ba0.6Sr0.4TiO3 film prepared by pulsed laser deposition in a mixture of argon and oxygen

2015 ◽  
Vol 29 (15) ◽  
pp. 1550079 ◽  
Author(s):  
J. Z. Lou ◽  
X. Y. Fang ◽  
S. J. Wang ◽  
X. H. Dai ◽  
C. J. Jia ◽  
...  
Keyword(s):  
Physical Properties ◽  
Pulsed Laser Deposition ◽  
Leakage Current ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Pure Oxygen ◽  
Force Microscopy ◽  
Bst Films ◽  
Leakage Current Mechanism ◽  
Conductive Mechanism

In order to investigate the effect of argon introduction on the structural and physical properties of Ba 0.6 Sr 0.4 TiO 3 (BST) films, epitaxial BST films have been grown by pulsed laser deposition (PLD) on (001) oriented Nb - SrTiO 3 (STON) substrates in the ambient gas of pure oxygen and the mixture of argon and oxygen, respectively. The atomic force microscopy (AFM) reveals that the sample deposited in the mixture of argon and oxygen has a bigger grain size than that deposited in pure oxygen. The dielectric properties of two BST films have been investigated using the Pt /BST/STON parallel plate capacitors. The tunability and the figure of merit (FOM) of the BST film deposited in the mixture gas are about 41% and 7.07 at a DC bias voltage of 8 V at room temperature, which are better than 32% and 4.51, for BST film deposited in pure oxygen. On account of the introduction of argon, the leakage current density of the BST film deposited in the mixture gas has fallen by almost five times, and the leakage current mechanism is both in accordance with ohmic conductive mechanism.

Ferroelectric and Leakage Current Properties of a BiFeO$_{3}$-BaTiO$_{3}$ Solid Solution Prepared by Using Pulsed Laser Deposition

2015 ◽  
Vol 65 (6) ◽  
pp. 550-554
Author(s):  
M. H. LEE ◽  
D. J. KIM ◽  
J. S. PARK ◽  
M.-H. KIM ◽  
T. K. SONG* ◽  
...  
Keyword(s):  
Solid Solution ◽  
Pulsed Laser Deposition ◽  
Leakage Current ◽  
Pulsed Laser ◽  
Laser Deposition

Leakage current of multiferroic (Bi0.6Tb0.3La0.1)FeO3 thin films grown at various oxygen pressures by pulsed laser deposition and annealing effect

2006 ◽  
Vol 99 (5) ◽  
pp. 054104 ◽  
Author(s):  
Can Wang ◽  
Mitsue Takahashi ◽  
Hidetoshi Fujino ◽  
Xia Zhao ◽  
Eiji Kume ◽  
...  
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Leakage Current ◽  
Pulsed Laser ◽  
Annealing Effect ◽  
Laser Deposition
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