Interface control and leakage current conduction mechanism in HfO2 film prepared by pulsed laser deposition

2008 ◽  
Vol 93 (20) ◽  
pp. 202904 ◽  
Author(s):  
Hao Wang ◽  
Y. Wang ◽  
J. Zhang ◽  
C. Ye ◽  
H. B. Wang ◽  
...  
1994 ◽  
Vol 343 ◽  
Author(s):  
H-J. Cho ◽  
William Jo ◽  
T. W. Noh

ABSTRACTBi4Ti3O12 thin films have been grown on indium tin oxide coated glass by pulsed laser deposition. The films are rapidly thermal annealed at 650 °C in various kinds of ambients. X-ray diffraction and scanning electron microscopy are used to investigate crystallization and microstructures, respectively. Using Auger electron microscopy, chemical compositions and depth profiles are examined. Optical and current-voltage characteristics measurements of the films show that their transmittance and leakage current behaviors are strongly dependent upon the microstructures. O2 partial pressure in the rapid thermal annealing process is found to be an important parameter which determines crystallization, microstructures, and leakage current behaviors of the Bi4Ti3O12 thin films.


Micromachines ◽  
2021 ◽  
Vol 12 (10) ◽  
pp. 1224
Author(s):  
Yukiko Obata ◽  
Igor A. Karateev ◽  
Ivan Pavlov ◽  
Alexander L. Vasiliev ◽  
Silvia Haindl

Anti-PbO-type FeSe shows an advantageous dependence of its superconducting properties with mechanical strain, which could be utilized as future sensor functionality. Although superconducting FeSe thin films can be grown by various methods, ultrathin films needed in potential sensor applications were only achieved on a few occasions. In pulsed laser deposition, the main challenges can be attributed to such factors as controlling film stoichiometry (i.e., volatile elements during the growth), nucleation, and bonding to the substrate (i.e., film/substrate interface control) and preventing the deterioration of superconducting properties (i.e., by surface oxidization). In the present study, we address various technical issues in thin film growth of FeSe by pulsed laser deposition, which pose constraints in engineering and reduce the application potential for FeSe thin films in sensor devices. The results indicate the need for sophisticated engineering protocols that include interface control and surface protection from chemical deterioration. This work provides important actual limitations for pulsed laser deposition (PLD) of FeSe thin films with the thicknesses below 30 nm.


2011 ◽  
Vol 98 (2) ◽  
pp. 022902 ◽  
Author(s):  
D. Y. Wang ◽  
D. M. Lin ◽  
K. W. Kwok ◽  
N. Y. Chan ◽  
J. Y. Dai ◽  
...  

2012 ◽  
Vol 134 (1) ◽  
pp. 133-138 ◽  
Author(s):  
S. W. Kim ◽  
H. I. Choi ◽  
M. H. Lee ◽  
D. Do ◽  
S. S. Kim ◽  
...  

2020 ◽  
Author(s):  
P. S. Padhi ◽  
R. S. Ajimsha ◽  
S. K. Chetia ◽  
Amit K. Das ◽  
Vikas K. Sahu ◽  
...  

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