Leakage current of multiferroic (Bi0.6Tb0.3La0.1)FeO3 thin films grown at various oxygen pressures by pulsed laser deposition and annealing effect

2006 ◽  
Vol 99 (5) ◽  
pp. 054104 ◽  
Author(s):  
Can Wang ◽  
Mitsue Takahashi ◽  
Hidetoshi Fujino ◽  
Xia Zhao ◽  
Eiji Kume ◽  
...  
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Leakage Current ◽  
Pulsed Laser ◽  
Annealing Effect ◽  
Laser Deposition

Pulsed Laser Deposition of Bi4Ti3O12 Thin Films on Indium Tin Oxide Coated Glass

1994 ◽  
Vol 343 ◽  
Author(s):  
H-J. Cho ◽  
William Jo ◽  
T. W. Noh
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Leakage Current ◽  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Chemical Compositions ◽  
Coated Glass

ABSTRACTBi4Ti3O12 thin films have been grown on indium tin oxide coated glass by pulsed laser deposition. The films are rapidly thermal annealed at 650 °C in various kinds of ambients. X-ray diffraction and scanning electron microscopy are used to investigate crystallization and microstructures, respectively. Using Auger electron microscopy, chemical compositions and depth profiles are examined. Optical and current-voltage characteristics measurements of the films show that their transmittance and leakage current behaviors are strongly dependent upon the microstructures. O2 partial pressure in the rapid thermal annealing process is found to be an important parameter which determines crystallization, microstructures, and leakage current behaviors of the Bi4Ti3O12 thin films.

Ferroelectric, piezoelectric, and leakage current properties of (K0.48Na0.48Li0.04)(Nb0.775Ta0.225)O3 thin films grown by pulsed laser deposition

2011 ◽  
Vol 98 (2) ◽  
pp. 022902 ◽  
Author(s):  
D. Y. Wang ◽  
D. M. Lin ◽  
K. W. Kwok ◽  
N. Y. Chan ◽  
J. Y. Dai ◽  
...  
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Leakage Current ◽  
Pulsed Laser ◽  
Laser Deposition

Annealing Effect on the Properties of Cu(In0.7 Ga0.3 )Se2 Thin Films Grown by Femtosecond Pulsed Laser Deposition

2013 ◽  
Vol 96 (8) ◽  
pp. 2419-2423 ◽  
Author(s):  
Mu-Gong Tsai ◽  
Hsien-Tse Tung ◽  
In-Gann Chen ◽  
Chia-Chuan Chen ◽  
Yun-Fang Wu ◽  
...  
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Annealing Effect ◽  
Laser Deposition ◽  
Femtosecond Pulsed Laser

Pulsed laser deposition of PbMg1/3Nb2/3O3 thin films and PbMg1/3Nb2/3O3/PbTiO3 multilayers

2001 ◽  
Vol 11 (PR11) ◽  
pp. Pr11-65-Pr11-69
Author(s):  
N. Lemée ◽  
H. Bouyanfif ◽  
J. L. Dellis ◽  
M. El Marssi ◽  
M. G. Karkut ◽  
...  
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Laser Deposition

SrBi2Nb2O9 ferroelectric thin films deposited by pulsed laser deposition on textured and epitaxied platinum electrodes

2001 ◽  
Vol 11 (PR11) ◽  
pp. Pr11-133-Pr11-137
Author(s):  
J. R. Duclère ◽  
M. Guilloux-Viry ◽  
A. Perrin ◽  
A. Dauscher ◽  
S. Weber ◽  
...  
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Ferroelectric Thin Films ◽  
Laser Deposition ◽  
Platinum Electrodes

Microstructural and Electrical Characterization of Barium Strontium Titanatebased Solid Solution Thin Films Deposited on Ceramic Substrates by Pulsed Laser Deposition

2002 ◽  
Vol 720 ◽  
Author(s):  
Costas G. Fountzoulas ◽  
Daniel M. Potrepka ◽  
Steven C. Tidrow
Keyword(s):  
Thin Films ◽  
Dielectric Constant ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Electrical Characterization ◽  
Field Variable ◽  
Laser Deposition ◽  
X Ray Diffraction ◽  
Ceramic Substrates ◽  
Nominal Thickness

AbstractFerroelectrics are multicomponent materials with a wealth of interesting and useful properties, such as piezoelectricity. The dielectric constant of the BSTO ferroelectrics can be changed by applying an electric field. Variable dielectric constant results in a change in phase velocity in the device allowing it to be tuned in real time for a particular application. The microstructure of the film influences the electronic properties which in turn influences the performance of the film. Ba0.6Sr0.4Ti1-y(A 3+, B5+)yO3 thin films, of nominal thickness of 0.65 μm, were synthesized initially at substrate temperatures of 400°C, and subsequently annealed to 750°C, on LaAlO3 (100) substrates, previously coated with LaSrCoO conductive buffer layer, using the pulsed laser deposition technique. The microstructural and physical characteristics of the postannealed thin films have been studied using x-ray diffraction, scanning electron microscopy, and nano indentation and are reported. Results of capacitance measurements are used to obtain dielectric constant and tunability in the paraelectric (T>Tc) regime.

Preparation and characterization of CuSbSe2 thin films deposited by pulsed laser deposition

2021 ◽  
Vol 127 ◽  
pp. 105716
Author(s):  
Tianzhen Guo ◽  
Dan Wang ◽  
Yajun Yang ◽  
Xiaoyong Xiong ◽  
Kelin Li ◽  
...  
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Laser Deposition
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