Temperature-dependent leakage current behavior of epitaxial Bi0.5Na0.5TiO3-based thin films made by pulsed laser deposition

2011 ◽  
Vol 110 (10) ◽  
pp. 103710 ◽  
Author(s):  
M. M. Hejazi ◽  
A. Safari
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Leakage Current ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Temperature Dependent ◽  
Current Behavior

scholarly journals Temperature dependent self-compensation in Al- and Ga-doped Mg0.05 Zn0.95O thin films grown by pulsed laser deposition

2016 ◽  
Vol 120 (20) ◽  
pp. 205703 ◽  
Author(s):  
Abdurashid Mavlonov ◽  
Steffen Richter ◽  
Holger von Wenckstern ◽  
Rüdiger Schmidt-Grund ◽  
Michael Lorenz ◽  
...  
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Temperature Dependent

Pulsed Laser Deposition of Bi4Ti3O12 Thin Films on Indium Tin Oxide Coated Glass

1994 ◽  
Vol 343 ◽  
Author(s):  
H-J. Cho ◽  
William Jo ◽  
T. W. Noh
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Leakage Current ◽  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Chemical Compositions ◽  
Coated Glass

ABSTRACTBi4Ti3O12 thin films have been grown on indium tin oxide coated glass by pulsed laser deposition. The films are rapidly thermal annealed at 650 °C in various kinds of ambients. X-ray diffraction and scanning electron microscopy are used to investigate crystallization and microstructures, respectively. Using Auger electron microscopy, chemical compositions and depth profiles are examined. Optical and current-voltage characteristics measurements of the films show that their transmittance and leakage current behaviors are strongly dependent upon the microstructures. O2 partial pressure in the rapid thermal annealing process is found to be an important parameter which determines crystallization, microstructures, and leakage current behaviors of the Bi4Ti3O12 thin films.

Ferroelectric, piezoelectric, and leakage current properties of (K0.48Na0.48Li0.04)(Nb0.775Ta0.225)O3 thin films grown by pulsed laser deposition

2011 ◽  
Vol 98 (2) ◽  
pp. 022902 ◽  
Author(s):  
D. Y. Wang ◽  
D. M. Lin ◽  
K. W. Kwok ◽  
N. Y. Chan ◽  
J. Y. Dai ◽  
...  
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Leakage Current ◽  
Pulsed Laser ◽  
Laser Deposition

Temperature dependent leakage current behavior of pulsed laser ablated SrBi2Ta2O9 thin films

2009 ◽  
Vol 105 (4) ◽  
pp. 044103 ◽  
Author(s):  
A. Roy ◽  
S. Maity ◽  
A. Dhar ◽  
D. Bhattacharya ◽  
S. K. Ray
Keyword(s):  
Thin Films ◽  
Leakage Current ◽  
Pulsed Laser ◽  
Temperature Dependent ◽  
Current Behavior

Structural and Leakage Current Behavior of Bi4Ti3O12 Thin Films on La0–5Sr0–5jCoO3 Bottom Electrodes Grown by Pulsed Laser Deposition

1994 ◽  
Vol 361 ◽  
Author(s):  
William Jo ◽  
K.H. Kim ◽  
T.W. Noh ◽  
S.D. Kwon ◽  
B.D. Choe ◽  
...  
Keyword(s):  
Thin Films ◽  
Leakage Current ◽  
Bottom Electrode ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
X Ray Diffraction ◽  
Cross Sectional ◽  
Crystalline Orientation ◽  
X Ray ◽  
Current Behavior

ABSTRACTUsing La0.5Sro.5CoO3 bottom electrode layers, Bi4Ti3O12 thin films were grown on LaAlO3(001), Al2O3(0001), and Si(001) substrates. Crystalline orientation of the Bi4Ti3O12 thin films was examined by x-ray diffraction techniques. The cross-sectional microstructures of Bi4Ti3O12/La0.5Sr0.5CoO3 heterostructures are investigated. It is found that the crystalline orientation and the microstructure affect leakage current behavior of the Bi4Ti3O12 layers.

scholarly journals Temperature dependent photoreflectance study of Cu2SnS3 thin films produced by pulsed laser deposition

2017 ◽  
Vol 110 (26) ◽  
pp. 261105 ◽  
Author(s):  
T. Raadik ◽  
M. Grossberg ◽  
J. Krustok ◽  
M. Kauk-Kuusik ◽  
A. Crovetto ◽  
...  
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Temperature Dependent
Sign in / Sign up

Export Citation Format

Share Document