scholarly journals Experimental photoacoustic observation of the photogenerated excess carrier influence on the thermoelastic response of n-type silicon

2020 ◽  
Vol 128 (9) ◽  
pp. 095103
Author(s):  
D. K. Markushev ◽  
D. D. Markushev ◽  
S. M. Aleksić ◽  
D. S. Pantić ◽  
S. P. Galović ◽  
...  
Keyword(s):  
Excess Carrier ◽  
Type Silicon ◽  
Thermoelastic Response

scholarly journals The surface recombination velocity and bulk lifetime influences on photogenerated excess carrier density and temperature distributions in n-type silicon

2018 ◽  
Vol 31 (2) ◽  
pp. 313-328 ◽  
Author(s):  
Dragana Markushev ◽  
Dragan Markushev ◽  
Slobodanka Galovic ◽  
Sanja Aleksic ◽  
Dragan Pantic ◽  
...  
Keyword(s):  
Carrier Density ◽  
Surface Recombination ◽  
Surface Recombination Velocity ◽  
Excess Carrier ◽  
Experimental Scheme ◽  
Type Silicon ◽  
Temperature Distributions ◽  
Recombination Processes ◽  
Sensitive Function ◽  
Recombination Velocity

The temperature distributions in the n-type silicon circular plate, excited by a frequency-modulated light source from one side, are investigated theoretically in the frequency domain. The influence of the photogenerated excess carrier density on the temperature distributions is considered with respect to the sample thickness, surface quality and carrier lifetime. The presence of the thermalization and non-radiative recombination processes are taken into account. The existence of the fast and slow heat sources in the sample is recognized. It is shown that the temperature distribution on sample surfaces is a sensitive function of an excess carrier density under a bulk and surface recombination. The most favorable values of surface velocities ratio and bulk lifetime are established, assigned for a simpler and more effective analysis of the carrier influence in semiconductors. The photothermal and photoacoustic transmission detection configuration is proposed as a most suitable experimental scheme for the investigation of the excess carrier influence on the silicon surface temperatures.

scholarly journals Influence of net doping, excess carrier density and annealing on the boron oxygen related defect density in compensated n-type silicon

2011 ◽  
Vol 110 (6) ◽  
pp. 063708 ◽  
Author(s):  
F. E. Rougieux ◽  
B. Lim ◽  
J. Schmidt ◽  
M. Forster ◽  
D. Macdonald ◽  
...  
Keyword(s):  
Carrier Density ◽  
Defect Density ◽  
Excess Carrier ◽  
Type Silicon ◽  
Oxygen Related Defect ◽  
Related Defect

A Long Bar Type Silicon Resonator with a High Quality Factor

2014 ◽  
Vol 134 (2) ◽  
pp. 26-31 ◽  
Author(s):  
Nguyen Van Toan ◽  
Masaya Toda ◽  
Yusuke Kawai ◽  
Takahito Ono
Keyword(s):  
Quality Factor ◽  
High Quality Factor ◽  
High Quality ◽  
Type Silicon ◽  
Silicon Resonator

Three-Dimensional Wiring Fabricating Process of Cantilever-type Silicon Probe for Semiconductor Testing

2015 ◽  
Vol 135 (8) ◽  
pp. 349-354
Author(s):  
Takanori Aono ◽  
Masatoshi Kanamaru ◽  
Ryuji Kohno ◽  
Atsushi Hosogane
Keyword(s):  
Three Dimensional ◽  
Type Silicon

Contacting Diffusion with FIB for Backside Circuit Edit—Procedures and Material Analysis

2005 ◽  
Author(s):  
U. Kerst ◽  
P. Sadewater ◽  
R. Schlangen ◽  
C. Boit ◽  
R. Leihkauf ◽  
...  
Keyword(s):  
Numerical Simulation ◽  
Electrical Properties ◽  
Process Parameters ◽  
Thermal Effects ◽  
Silicon Surface ◽  
Ohmic Contacts ◽  
Ion Beam ◽  
Schottky Barriers ◽  
Material Analysis ◽  
Type Silicon

Abstract The feasibility of low-ohmic FIB contacts to silicon with a localized silicidation was presented at ISTFA 2004 [1]. We have systematically explored options in contacting diffusions with FIB metal depositions directly. A demonstration of a 200nm x 200nm contact on source/drain diffusion level is given. The remaining article focuses on the properties of FIB deposited contacts on differently doped n-type Silicon. After the ion beam assisted platinum deposition a silicide was formed using a forming current in two configurations. The electrical properties of the contacts are compared to furnace anneal standards. Parameters of Schottky-barriers and thermal effects of the formation current are studied with numerical simulation. TEM images and material analysis of the low ohmic contacts show a Pt-silicide formed on a silicon surface with no visible defects. The findings indicate which process parameters need a more detailed investigation in order to establish values for a practical process.

Study of muonium behavior in n-type silicon for generation of ultra cold muonium in vacuum

2021 ◽  
pp. 412997
Author(s):  
A.D. Pant ◽  
K. Ishida ◽  
N. Kawamura ◽  
S. Matoba ◽  
A. Koda ◽  
...  
Keyword(s):  
Type Silicon

scholarly journals Determination of piezo-resistive coefficient π44 in p-type silicon by comparing simulation and measurement of pressure sensors

AIP Advances ◽  
2021 ◽  
Vol 11 (8) ◽  
pp. 085005
Author(s):  
Kevin Lauer ◽  
Geert Brokmann ◽  
Mario Bähr ◽  
Thomas Ortlepp
Keyword(s):  
Pressure Sensors ◽  
Type Silicon ◽  
P Type
Sign in / Sign up

Export Citation Format

Share Document