Morphology of Porous n‐Type Silicon Obtained by Photoelectrochemical Etching: I . Correlations with Material and Etching Parameters

1994 ◽  
Vol 141 (4) ◽  
pp. 958-967 ◽  
Author(s):  
Claude Lévy‐Clément ◽  
Abdelghani Lagoubi ◽  
Micha Tomkiewicz
Keyword(s):  
Photoelectrochemical Etching ◽  
Type Silicon ◽  
Etching Parameters

Morphology of porous n-type silicon obtained by photoelectrochemical etching II

1993 ◽  
Vol 57 (1-6) ◽  
pp. 67-71 ◽  
Author(s):  
Ana Albu-Yaron ◽  
Stéphane Bastide ◽  
Jean Luc Maurice ◽  
Claude Lévy-Clément
Keyword(s):  
Photoelectrochemical Etching ◽  
Type Silicon

A Long Bar Type Silicon Resonator with a High Quality Factor

2014 ◽  
Vol 134 (2) ◽  
pp. 26-31 ◽  
Author(s):  
Nguyen Van Toan ◽  
Masaya Toda ◽  
Yusuke Kawai ◽  
Takahito Ono
Keyword(s):  
Quality Factor ◽  
High Quality Factor ◽  
High Quality ◽  
Type Silicon ◽  
Silicon Resonator

Three-Dimensional Wiring Fabricating Process of Cantilever-type Silicon Probe for Semiconductor Testing

2015 ◽  
Vol 135 (8) ◽  
pp. 349-354
Author(s):  
Takanori Aono ◽  
Masatoshi Kanamaru ◽  
Ryuji Kohno ◽  
Atsushi Hosogane
Keyword(s):  
Three Dimensional ◽  
Type Silicon

Contacting Diffusion with FIB for Backside Circuit Edit—Procedures and Material Analysis

2005 ◽  
Author(s):  
U. Kerst ◽  
P. Sadewater ◽  
R. Schlangen ◽  
C. Boit ◽  
R. Leihkauf ◽  
...  
Keyword(s):  
Numerical Simulation ◽  
Electrical Properties ◽  
Process Parameters ◽  
Thermal Effects ◽  
Silicon Surface ◽  
Ohmic Contacts ◽  
Ion Beam ◽  
Schottky Barriers ◽  
Material Analysis ◽  
Type Silicon

Abstract The feasibility of low-ohmic FIB contacts to silicon with a localized silicidation was presented at ISTFA 2004 [1]. We have systematically explored options in contacting diffusions with FIB metal depositions directly. A demonstration of a 200nm x 200nm contact on source/drain diffusion level is given. The remaining article focuses on the properties of FIB deposited contacts on differently doped n-type Silicon. After the ion beam assisted platinum deposition a silicide was formed using a forming current in two configurations. The electrical properties of the contacts are compared to furnace anneal standards. Parameters of Schottky-barriers and thermal effects of the formation current are studied with numerical simulation. TEM images and material analysis of the low ohmic contacts show a Pt-silicide formed on a silicon surface with no visible defects. The findings indicate which process parameters need a more detailed investigation in order to establish values for a practical process.

Study of muonium behavior in n-type silicon for generation of ultra cold muonium in vacuum

2021 ◽  
pp. 412997
Author(s):  
A.D. Pant ◽  
K. Ishida ◽  
N. Kawamura ◽  
S. Matoba ◽  
A. Koda ◽  
...  
Keyword(s):  
Type Silicon

scholarly journals Determination of piezo-resistive coefficient π44 in p-type silicon by comparing simulation and measurement of pressure sensors

AIP Advances ◽  
2021 ◽  
Vol 11 (8) ◽  
pp. 085005
Author(s):  
Kevin Lauer ◽  
Geert Brokmann ◽  
Mario Bähr ◽  
Thomas Ortlepp
Keyword(s):  
Pressure Sensors ◽  
Type Silicon ◽  
P Type
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