Effect of circuit oscillations on the dc current‐voltage characteristics of double barrier resonant tunneling structures

Jeff F. Young; B. M. Wood; H. C. Liu; M. Buchanan; D. Landheer; A. J. SpringThorpe; P. Mandeville

doi:10.1063/1.99127

Effect of circuit oscillations on the dc current‐voltage characteristics of double barrier resonant tunneling structures

Applied Physics Letters ◽

10.1063/1.99127 ◽

1988 ◽

Vol 52 (17) ◽

pp. 1398-1400 ◽

Cited By ~ 58

Author(s):

Jeff F. Young ◽

B. M. Wood ◽

H. C. Liu ◽

M. Buchanan ◽

D. Landheer ◽

...

Keyword(s):

Resonant Tunneling ◽

Double Barrier ◽

Current Voltage ◽

Current Voltage Characteristics ◽

Dc Current ◽

Double Barrier Resonant Tunneling

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Erratum: Effect of circuit oscillations on the dc current‐voltage characteristics of double‐barrier resonant tunneling structures [Appl. Phys. Lett. 52, 1398 (1988)]

Applied Physics Letters ◽

10.1063/1.100421 ◽

1988 ◽

Vol 53 (8) ◽

pp. 719-719

Author(s):

Jeff F. Young ◽

B. M. Wood ◽

H. C. Liu ◽

M. Buchanan ◽

D. Landheer ◽

...

Keyword(s):

Resonant Tunneling ◽

Double Barrier ◽

Current Voltage ◽

Current Voltage Characteristics ◽

Dc Current ◽

Double Barrier Resonant Tunneling

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Current-voltage characteristics of zinc-blende (cubic) Al0.3Ga0.7N/GaN double barrier resonant tunneling diodes

Applied Physics Letters ◽

10.1063/1.3488819 ◽

2010 ◽

Vol 97 (11) ◽

pp. 112102 ◽

Cited By ~ 23

Author(s):

N. Zainal ◽

S. V. Novikov ◽

C. J. Mellor ◽

C. T. Foxon ◽

A. J. Kent

Keyword(s):

Resonant Tunneling ◽

Resonant Tunneling Diodes ◽

Double Barrier ◽

Tunneling Diodes ◽

Zinc Blende ◽

Current Voltage ◽

Current Voltage Characteristics ◽

Double Barrier Resonant Tunneling

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Phase-Breaking Effect Appearing in the Current–Voltage Characteristics of Double-Barrier Resonant Tunneling Diodes –Theoretical Fitting Over Four Orders of Magnitude–

Japanese Journal of Applied Physics ◽

10.1143/jjap.40.3018 ◽

2001 ◽

Vol 40 (Part 1, No. 4B) ◽

pp. 3018-3022 ◽

Cited By ~ 4

Author(s):

Masanori Nagase ◽

Kazuhito Furuya ◽

Nobuya Machida

Keyword(s):

Resonant Tunneling ◽

Resonant Tunneling Diodes ◽

Double Barrier ◽

Breaking Effect ◽

Tunneling Diodes ◽

Current Voltage ◽

Current Voltage Characteristics ◽

Double Barrier Resonant Tunneling

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Current–voltage characteristics of GaAs/AlAs double‐barrier resonant tunneling diodes with a Si‐planar‐doped barrier

Journal of Applied Physics ◽

10.1063/1.360972 ◽

1996 ◽

Vol 79 (3) ◽

pp. 1801-1806 ◽

Cited By ~ 7

Author(s):

Hiroyuki Fukuyama ◽

Takao Waho ◽

Takashi Mizutani

Keyword(s):

Resonant Tunneling ◽

Resonant Tunneling Diodes ◽

Double Barrier ◽

Tunneling Diodes ◽

Current Voltage ◽

Current Voltage Characteristics ◽

Double Barrier Resonant Tunneling

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Current–voltage characteristics in double-barrier resonant tunneling diodes with embedded GaAs quantum rings

Physica E Low-dimensional Systems and Nanostructures ◽

10.1016/j.physe.2005.12.170 ◽

2006 ◽

Vol 32 (1-2) ◽

pp. 550-553 ◽

Cited By ~ 4

Author(s):

T. Noda ◽

N. Koguchi

Keyword(s):

Resonant Tunneling ◽

Resonant Tunneling Diodes ◽

Double Barrier ◽

Quantum Rings ◽

Tunneling Diodes ◽

Current Voltage ◽

Current Voltage Characteristics ◽

Double Barrier Resonant Tunneling

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The Effect Of Elastic Scattering Centers On The Current Voltage Characteristics Of Double Barrier Resonant Tunneling Diodes

10.1117/12.947284 ◽

1988 ◽

Author(s):

E. Wolak ◽

K. L. Lear ◽

P. M. Pitner ◽

B. G. Park ◽

E. S. Hellman ◽

...

Keyword(s):

Elastic Scattering ◽

Resonant Tunneling ◽

Resonant Tunneling Diodes ◽

Double Barrier ◽

Tunneling Diodes ◽

Current Voltage ◽

Scattering Centers ◽

Current Voltage Characteristics ◽

Double Barrier Resonant Tunneling

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Bias circuit instabilities and their effect on the d.c. current-voltage characteristics of double-barrier resonant tunneling diodes

Solid-State Electronics ◽

10.1016/0038-1101(91)90081-9 ◽

1991 ◽

Vol 34 (2) ◽

pp. 149-156 ◽

Cited By ~ 21

Author(s):

C. Kidner ◽

I. Mehdi ◽

J.R. East ◽

G.I. Haddad

Keyword(s):

Resonant Tunneling ◽

Resonant Tunneling Diodes ◽

Double Barrier ◽

Tunneling Diodes ◽

Current Voltage ◽

Current Voltage Characteristics ◽

Double Barrier Resonant Tunneling

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Phase Coherence and Temperature Dependence of Current–Voltage Characteristics at Low-Current and Low-Voltage Region of Double-Barrier Resonant-Tunneling Diode

Japanese Journal of Applied Physics ◽

10.1143/jjap.41.4469 ◽

2002 ◽

Vol 41 (Part 1, No. 7A) ◽

pp. 4469-4473

Author(s):

Nobuya Machida ◽

Hiroyuki Nagatsuka ◽

Masanori Nagase ◽

Kazuhito Furuya

Keyword(s):

Temperature Dependence ◽

Resonant Tunneling ◽

Low Voltage ◽

Phase Coherence ◽

Double Barrier ◽

Tunneling Diode ◽

Current Voltage ◽

Current Voltage Characteristics ◽

Double Barrier Resonant Tunneling ◽

Voltage Region

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Steep nonlinearity of the the forward-biased current–voltage characteristic of a system with a double-barrier resonant-tunneling structure built into a Schottky barrier

Low Temperature Physics ◽

10.1063/1.1330601 ◽

2000 ◽

Vol 26 (11) ◽

pp. 849-852

Author(s):

A. N. Korol’ ◽

O. V. Tretyak ◽

D. I. Sheka

Keyword(s):

Schottky Barrier ◽

Resonant Tunneling ◽

Voltage Characteristic ◽

Current Voltage Characteristic ◽

Double Barrier ◽

Current Voltage ◽

Double Barrier Resonant Tunneling ◽

Resonant Tunneling Structure

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dc current‐voltage characteristics of a double‐quantum‐well field‐effect resonant tunneling transistor

Applied Physics Letters ◽

10.1063/1.107052 ◽

1992 ◽

Vol 60 (18) ◽

pp. 2273-2275 ◽

Cited By ~ 3

Author(s):

J. G. Chen ◽

C. H. Yang ◽

R. A. Wilson ◽

C. E. C. Wood

Keyword(s):

Quantum Well ◽

Field Effect ◽

Resonant Tunneling ◽

Double Quantum ◽

Double Quantum Well ◽

Current Voltage ◽

Well Field ◽

Current Voltage Characteristics ◽

Dc Current

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