Steep nonlinearity of the the forward-biased current–voltage characteristic of a system with a double-barrier resonant-tunneling structure built into a Schottky barrier

2000 ◽  
Vol 26 (11) ◽  
pp. 849-852
Author(s):  
A. N. Korol’ ◽  
O. V. Tretyak ◽  
D. I. Sheka
Keyword(s):  
Schottky Barrier ◽  
Resonant Tunneling ◽  
Voltage Characteristic ◽  
Current Voltage Characteristic ◽  
Double Barrier ◽  
Current Voltage ◽  
Double Barrier Resonant Tunneling ◽  
Resonant Tunneling Structure

Modeling of current-voltage characteristic of the intergranular barrier in metal oxide varistor ceramics

2014 ◽  
Vol 10 (3) ◽  
pp. 362-378 ◽  
Author(s):  
Alexander S. Tonkoshkur ◽  
Alexander V. Ivanchenko
Keyword(s):  
Schottky Barrier ◽  
Potential Barrier ◽  
Voltage Characteristic ◽  
Arbitrary Form ◽  
Current Voltage Characteristic ◽  
Double Barrier ◽  
Content Type ◽  
Current Voltage ◽  
Current Voltage Characteristics ◽  
Metal Oxide Varistor

Purpose – The purpose of this paper is to develop a generalized model of the nonlinear conductivity of varistor ceramic suitable for solving problems of prediction and control of ceramic nonlinearity, stability of varistor properties. Design/methodology/approach – The modeling of current-voltage characteristic of the intergranular barrier in metal oxide varistor ceramics is based on the development of the algorithm. It includes all the known mechanisms of electrotransfer in a wide range of voltages and currents of the current-voltage characteristics, and also takes into account the deviation of the barrier form the Schottky barrier. Findings – The models of double Schottky barrier and double barrier of arbitrary form, as well as the algorithms for calculating the current-voltage characteristics of a single intergranular potential barrier and a separate “microvaristor” with the use of the most well-established understanding of the main mechanisms of electrical are developed. The results of current-voltage characteristics modeling correspond to the existing understanding of the nonlinear electrical conductivity varistor ceramics are based on zinc oxide. The model of double barrier of arbitrary form takes into account the deviation of the barrier form the Schottky barrier which is important in predicting the deformation of the current-voltage characteristics of the varistor products in the process of degradation. Originality/value – The relation between the form of the current-voltage characteristic and the distribution profile of the donor concentration in the surface regions of the semiconductor crystallites constituting the intergranular potential barrier is established. The accumulation of donors in the space charge region leads to the increase in the current on the prebreakdown region of the current-voltage characteristic and the reduction of voltage corresponding to the breakdown region beginning of the current-voltage characteristic. The significant role of the interlayer in the formation of current-voltage characteristic of the intergranular potential barrier is shown.

Magnetic-field-induced modulation of intersubband scattering in a double-barrier resonant-tunneling structure

1996 ◽  
Vol 53 (20) ◽  
pp. 13651-13655 ◽  
Author(s):  
P. D. Buckle ◽  
J. W. Cockburn ◽  
M. S. Skolnick ◽  
R. Grey ◽  
G. Hill ◽  
...  
Keyword(s):  
Magnetic Field ◽  
Resonant Tunneling ◽  
Double Barrier ◽  
Double Barrier Resonant Tunneling ◽  
Resonant Tunneling Structure

scholarly journals Cross‐barrier recombination in a GaAs/AlGaAs double‐barrier resonant tunneling structure

1996 ◽  
Vol 79 (11) ◽  
pp. 8844-8846 ◽  
Author(s):  
J. W. Cockburn ◽  
P. D. Buckle ◽  
M. S. Skolnick ◽  
M. J. Birkett ◽  
R. Teissier ◽  
...  
Keyword(s):  
Resonant Tunneling ◽  
Double Barrier ◽  
Double Barrier Resonant Tunneling ◽  
Resonant Tunneling Structure

scholarly journals The Effect of Bilayer Graphene Nanoribbon Geometry on Schottky-Barrier Diode Performance

2013 ◽  
Vol 2013 ◽  
pp. 1-8 ◽  
Author(s):  
Meisam Rahmani ◽  
Razali Ismail ◽  
Mohammad Taghi Ahmadi ◽  
Mohammad Javad Kiani ◽  
Mehdi Saeidmanesh ◽  
...  
Keyword(s):  
Schottky Barrier ◽  
Bilayer Graphene ◽  
Graphene Nanoribbon ◽  
Voltage Characteristic ◽  
Schottky Barrier Diode ◽  
Current Voltage Characteristic ◽  
Turn On ◽  
Forward Current ◽  
Current Voltage ◽  
Bilayer Graphene Nanoribbon

Bilayer graphene nanoribbon is a promising material with outstanding physical and electrical properties that offers a wide range of opportunities for advanced applications in future nanoelectronics. In this study, the application of bilayer graphene nanoribbon in schottky-barrier diode is explored due to its different stacking arrangements. In other words, bilayer graphene nanoribbon schottky-barrier diode is proposed as a result of contact between a semiconductor (AB stacking) and metal (AA stacking) layers. To this end, an analytical model joint with numerical solution of carrier concentration for bilayer graphene nanoribbon in the degenerate and nondegenerate regimes is presented. Moreover, to determine the proposed diode performance, the carrier concentration model is adopted to derive the current-voltage characteristic of the device. The simulated results indicate a strong bilayer graphene nanoribbon geometry and temperature dependence of current-voltage characteristic showing that the forward current of the diode rises by increasing of width. In addition, the lower value of turn-on voltage appears as the more temperature increases. Finally, comparative study indicates that the proposed diode has a better performance compared to the silicon schottky diode, graphene nanoribbon homo-junction contact, and graphene-silicon schottky diode in terms of electrical parameters such as turn-on voltage and forward current.

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