Current–voltage characteristics of GaAs/AlAs double‐barrier resonant tunneling diodes with a Si‐planar‐doped barrier

1996 ◽  
Vol 79 (3) ◽  
pp. 1801-1806 ◽  
Author(s):  
Hiroyuki Fukuyama ◽  
Takao Waho ◽  
Takashi Mizutani
1992 ◽  
Vol 45 (24) ◽  
pp. 14407-14410 ◽  
Author(s):  
M. Tewordt ◽  
L. Marti´n-Moreno ◽  
J. T. Nicholls ◽  
M. Pepper ◽  
M. J. Kelly ◽  
...  

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