Epitaxial growth of Ge films on GaAs (285–415 °C) by laser photochemical vapor deposition

1988 ◽  
Vol 52 (20) ◽  
pp. 1710-1712 ◽  
Author(s):  
V. Tavitian ◽  
C. J. Kiely ◽  
D. B. Geohegan ◽  
J. G. Eden
Keyword(s):  
Epitaxial Growth ◽  
Vapor Deposition ◽  
Photochemical Vapor Deposition

NH3as a photosensitizer in the epitaxial growth of Ge on GaAs by laser photochemical vapor deposition

1989 ◽  
Vol 55 (1) ◽  
pp. 65-67 ◽  
Author(s):  
C. J. Kiely ◽  
V. Tavitian ◽  
C. Jones ◽  
J. G. Eden
Keyword(s):  
Epitaxial Growth ◽  
Vapor Deposition ◽  
Photochemical Vapor Deposition

Epitaxial growth of silicon by photochemical vapor deposition at a very low temperature of 200 °C

1986 ◽  
Vol 49 (2) ◽  
pp. 79-81 ◽  
Author(s):  
Shoji Nishida ◽  
Tsunenori Shiimoto ◽  
Akira Yamada ◽  
Shiro Karasawa ◽  
Makoto Konagai ◽  
...  
Keyword(s):  
Low Temperature ◽  
Epitaxial Growth ◽  
Vapor Deposition ◽  
Photochemical Vapor Deposition ◽  
Very Low Temperature

Epitaxial Growth of Silicon Using Photochemical Vapor Deposition at a Very Low Temperature of 200º Centigrade

1986 ◽  
Vol 71 ◽  
Author(s):  
M. Konagai ◽  
S. Nishida ◽  
A. Yamada ◽  
T. Shiimoto ◽  
S. Karasawa ◽  
...  
Keyword(s):  
Epitaxial Growth ◽  
Vapor Deposition ◽  
High Energy ◽  
Thin Layers ◽  
Epitaxial Layers ◽  
Si Substrates ◽  
Van Der Pauw ◽  
A New Technique ◽  
Photochemical Vapor Deposition ◽  
Secondary Ion

AbstractA new technique for silicon epitaxial growth has been developed using mercury—sensitized photochemical vapor deposition (photo—CVD). Epitaxial thin layers were grown on (100) Si substrates at 100–300ºC from a gas mixture of Si2H6+AiH2F2+H2 by irradiation of a low pressure mercury lamp (1849A, 2537A). Refiective high energy electron diffraction (RHEED) and Raman scattering measurements showed that the epitaxial layers had good crystallinities.The epitaxial layers were characterized by secondary ion mass spectroscopy (SIMS) and the van der Pauw Hall2 measurements. The undoped Si layer showed the electron mobility of 520cm2/Vs with a carrier concentration of 3.2xl04cm

Low-Temperature Silicon Epitaxial Growth by Photochemical Vapor Deposition Using Vacuum Ultraviolet Light

1987 ◽  
Vol 26 (Part 2, No. 7) ◽  
pp. L1189-L1192 ◽  
Author(s):  
Narishi Gonohe ◽  
Saburo Shimizu ◽  
Kouichi Tamagawa ◽  
Toshio Hayashi ◽  
Hiroyuki Yamakawa
Keyword(s):  
Low Temperature ◽  
Epitaxial Growth ◽  
Ultraviolet Light ◽  
Vapor Deposition ◽  
Vacuum Ultraviolet ◽  
Photochemical Vapor Deposition

Preparation and properties of microcrystalline silicon films using photochemical vapor deposition

1983 ◽  
Vol 59-60 ◽  
pp. 715-718 ◽  
Author(s):  
Tadashi Saitoh ◽  
Toshikazu Shimada ◽  
Masataka Migitaka ◽  
Yasuo Tarui
Keyword(s):  
Vapor Deposition ◽  
Silicon Films ◽  
Microcrystalline Silicon ◽  
Photochemical Vapor Deposition

Photochemical vapor deposition of titaniumdiboride

1990 ◽  
Vol 46 (1-4) ◽  
pp. 215-219 ◽  
Author(s):  
J. Elders ◽  
D. Bebelaar ◽  
J.D.W. van Voorst
Keyword(s):  
Vapor Deposition ◽  
Photochemical Vapor Deposition
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