Epitaxial growth of silicon by photochemical vapor deposition at a very low temperature of 200 °C
Keyword(s):
1989 ◽
Vol 28
(Part 2, No. 12)
◽
pp. L2284-L2287
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Keyword(s):
1987 ◽
Vol 26
(Part 2, No. 6)
◽
pp. L951-L953
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1994 ◽
Vol 141
(12)
◽
pp. 3584-3587
◽
Keyword(s):
1987 ◽
Vol 26
(Part 2, No. 7)
◽
pp. L1189-L1192
◽
Keyword(s):
1994 ◽
Vol 33
(Part 1, No.1A)
◽
pp. 240-246
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