Influence of Different Surface Passivation on Photoelectric Properties PbS QDs

The photoelectric characteristic of ITO/PbS quantum dots (QDs)/Al structure based single and hybrid iodine ions(I−) passivated PbS QDs have been investigated. The ITO/PbS QDs/Al structure with hybrid I− passivation have demonstrated a high light dark ratio of 565.5 at -2V. It is the result of removing more organic ligands on the surface of PbS QDs and introducing larger amount of I−. This work demonstrates that the hybrid I− passivated process has great potential in the performance improvement of PbS QDs based photovoltaic device.

Structural and Behavioural Analysis of As2Se3, TeO2, SiC, SiO2 and Si3N4 for Photonic Application

The materials significantly influence the structural, optical and photoelectrical characteristic. Materials such as Arsenic selenide, Tellurite Glass, Silicon carbide, Silicon dioxide and Silicon nitride are investigated through finite element method. The models are established to analyse the structural behaviour of polarization preserving fibre of proposed materials. Photoelectric characteristic determines guided properties of photon particles. Refractive index of the materials influences the properties of photonic crystal fibre. A Polarization Splitter based hexagonal structure is proposed, where inner ring of cladding is in elliptical shape air holes and outer rings are in circular air holes. It provides highly negative dispersion, low confinement loss and high nonlinear coefficient between 1µm to 2µm wide wavelength ranges. The dispersion result shows -2000 db/km-nm at 1.55µm wavelength. Polarization beam splitters photonic crystal fiber characteristics of proposed materials are analysed with same structural parameters.

Scalable Production of Graphene/Semiconducting Single-Wall Carbon Nanotube Film Schottky Broadband Photodiode Array with Enhanced Photoresponse

A general approach was developed to fabricate graphene/semiconducting single-wall carbon nanotube (graphene/s-SWCNT) film Schottky junctions on a large scale. The graphene/s-SWCNT film photodiodes array based on the vertically stacked Schottky junction were fabricated. The all-carbon cross-shaped structure consisted of multielement graphene/s-SWCNT Schottky photodiodes and presented a rich collection of electronics and photonics. The as-fabricated carbon-based photodiode presented an ultra-broadband photodetection characteristic with a high responsivity of 1.75 A/W at near-infrared wavelengths and a fast response rise time of 15 μs. The as-fabricated device clearly showed gate-tunable and wavelength-dependent photoelectric characteristic. Moreover, the corresponding photocurrent excitation spectrum was also demonstrated. In particular, the Si compatible and high throughput fabrication process for the devices made it conducive for large-area multielement optoelectronics devices.