Epitaxial Growth of Silicon Using Photochemical Vapor Deposition at a Very Low Temperature of 200º Centigrade

1986 ◽  
Vol 71 ◽  
Author(s):  
M. Konagai ◽  
S. Nishida ◽  
A. Yamada ◽  
T. Shiimoto ◽  
S. Karasawa ◽  
...  
Keyword(s):  
Epitaxial Growth ◽  
Vapor Deposition ◽  
High Energy ◽  
Thin Layers ◽  
Epitaxial Layers ◽  
Si Substrates ◽  
Van Der Pauw ◽  
A New Technique ◽  
Photochemical Vapor Deposition ◽  
Secondary Ion

AbstractA new technique for silicon epitaxial growth has been developed using mercury—sensitized photochemical vapor deposition (photo—CVD). Epitaxial thin layers were grown on (100) Si substrates at 100–300ºC from a gas mixture of Si2H6+AiH2F2+H2 by irradiation of a low pressure mercury lamp (1849A, 2537A). Refiective high energy electron diffraction (RHEED) and Raman scattering measurements showed that the epitaxial layers had good crystallinities.The epitaxial layers were characterized by secondary ion mass spectroscopy (SIMS) and the van der Pauw Hall2 measurements. The undoped Si layer showed the electron mobility of 520cm2/Vs with a carrier concentration of 3.2xl04cm

Epitaxial growth of Ge films on GaAs (285–415 °C) by laser photochemical vapor deposition

1988 ◽  
Vol 52 (20) ◽  
pp. 1710-1712 ◽  
Author(s):  
V. Tavitian ◽  
C. J. Kiely ◽  
D. B. Geohegan ◽  
J. G. Eden
Keyword(s):  
Epitaxial Growth ◽  
Vapor Deposition ◽  
Photochemical Vapor Deposition

Low Temperature Silicon Epitaxial Growth by Plasma Enhanced Chemical Vapor Deposition From SiH4/He/H2

1991 ◽  
Vol 235 ◽  
Author(s):  
Yung-Jen Lin ◽  
Ming-Deng Shieh ◽  
Chiapying Lee ◽  
Tri-Rung Yew
Keyword(s):  
Electron Microscopy ◽  
Chemical Vapor Deposition ◽  
Epitaxial Growth ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Ex Situ ◽  
Epitaxial Layers ◽  
Cross Sectional ◽  
Transmission Electron

ABSTRACTSilicon epitaxial growth on silicon wafers were investigated by using plasma enhanced chemical vapor deposition from SiH4/He/H2. The epitaxial layers were growm at temperatures of 350°C or lower. The base pressure of the chamber was greater than 2 × 10−5 Torr. Prior to epitaxial growth, the wafer was in-situ cleaned by H2 baking for 30 min. The epi/substrate interface and epitaxial layers were observed by cross-sectional transmission electron microscopy (XTEM). Finally, the influence of the ex-situ and in-situ cleaning processes on the qualities of the interface and epitaxial layers was discussed in detail.

Variations in Magnetic Hyperfine fields for Thin Epitaxial Heterostructures Of (110)Fe ON (111)Ag

1989 ◽  
Vol 151 ◽  
Author(s):  
C. J. Gutierrez ◽  
S. H. Mayer ◽  
Z. Q. Qiu ◽  
H. Tang ◽  
J. C. Walker
Keyword(s):  
Electron Diffraction ◽  
Epitaxial Growth ◽  
Growth Process ◽  
High Energy ◽  
Thin Layers ◽  
High Energy Electron ◽  
Hyperfine Fields ◽  
Iron Films ◽  
Magnetic Heterostructures ◽  
Epitaxial Heterostructures

ABSTRACTWe have made a study of magnetic heterostructures involving the epitaxial growth of (110)Fe on (111)Ag. The flatness and continuity of the films was verified by Reflection High Energy Electron Diffraction during the growth process. A series of structures were made with very thin intervening silver layers with thicker iron layers. The doping of appropriate layers by enriched Fe57 made it possible to examine the magnetic structure of the iron films as a function of depth. Preliminary results indicate that thin layers of silver sandwiched between two very thin Fe layers are able to transmit conduction electron polarization, resulting in iron behavior which resembles that of bulk iron. Implications of these results for understanding the nature of the magnetization of iron will be addressed in the following.

Morphology Optimization of Very Thick 4H-SiC Epitaxial Layers

2013 ◽  
Vol 740-742 ◽  
pp. 251-254
Author(s):  
Milan Yazdanfar ◽  
Pontus Stenberg ◽  
Ian D. Booker ◽  
Ivan.G Ivanov ◽  
Henrik Pedersen ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Epitaxial Growth ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Growth Conditions ◽  
Epitaxial Layers ◽  
Power Devices ◽  
Chemical Vapor Deposition Reactor ◽  
Thick Layers

Epitaxial growth of about 200 µm thick, low doped 4H-SiC layers grown on n-type 8° off-axis Si-face substrates at growth rates around 100 µm/h has been done in order to realize thick epitaxial layers with excellent morphology suitable for high power devices. The study was done in a hot wall chemical vapor deposition reactor without rotation. The growth of such thick layers required favorable pre-growth conditions and in-situ etch. The growth of 190 µm thick, low doped epitaxial layers with excellent morphology was possible when the C/Si ratio was below 0.9. A low C/Si ratio and a favorable in-situ etch are shown to be the key parameters to achieve 190 µm thick epitaxial layers with excellent morphology.

Low Temperature Silicon Epitaxial Growth by Plasma Enhanced Chemical Vapor Deposition from SiH4/He/H2

1991 ◽  
Vol 236 ◽  
Author(s):  
Yung-Jen Lin ◽  
Ming-Deng Shieh ◽  
Chiapying Lee ◽  
Tri-Rung Yew
Keyword(s):  
Electron Microscopy ◽  
Chemical Vapor Deposition ◽  
Epitaxial Growth ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Ex Situ ◽  
Epitaxial Layers ◽  
Cross Sectional ◽  
Transmission Electron

AbstractSilicon epitaxial growth on silicon wafers were investigated by using plasma enhanced chemical vapor deposition from SiH4/He/H2. The epitaxial layers were growm at temperatures of 350°C or lower. The base pressure of the chamber was greater than 2 × 10−5 Torr. Prior to epitaxial growth, the wafer was in-situ cleaned by H2 baking for 30 min. The epi/substrate interface and epitaxial layers were observed by cross-sectional transmission electron microscopy (XTEM). Finally, the influence of the ex-situ and in-situ cleaning processes on the qualities of the interface and epitaxial layers was discussed in detail.

Improvement of the crystallinity of GaN epitaxial layers grown on porous Si (100) layers by using a two-step method

2000 ◽  
Vol 15 (12) ◽  
pp. 2602-2605 ◽  
Author(s):  
T. W. Kang ◽  
S. H. Park ◽  
T. W. Kim
Keyword(s):  
Hall Effect ◽  
High Energy ◽  
Epitaxial Films ◽  
Epitaxial Layers ◽  
Porous Si ◽  
Step Method ◽  
High Quality ◽  
Si Substrates ◽  
Hall Effect Measurements ◽  
Step Growth

A new approach was used for combining GaN and porous Si with the goal of producing high-quality GaN epitaxial layers for optoelectronic integrated circuit devices based on Si substrates. Reflection high-energy electron diffraction (RHEED), x-ray diffraction (XRD), photoluminescence (PL), and Van der Pauw–Hall effect measurements were performed to investigate the structural, optical, and electrical properties of the GaN epitaxial films grown on porous Si(100) by plasma-assisted molecular-beam epitaxy with a two-step method. The RHEED patterns were streaky with clear Kikuchi lines, which was direct evidence for layer-by-layer two-dimensional growth of GaN epitaxial layers on porous Si layers. The XRD curves showed that the grown layers were GaN(0001) epitaxial films. The results of the XRD and the PL measurements showed that the crystallinities of the GaN epilayers grown on porous Si by using a two-step growth were remarkably improved because the porous Si layer reduced the strains in the GaN epilayers by sharing them with the Si substrates. Hall-effect measurements showed that the mobility of the GaN active layer was higher than that of the GaN initial layer. These results indicate that high-quality GaN epitaxial films grown on porous Si(100) by using two-step growth hold promise for potential applications in new kinds of optoelectronic monolithic and ultralarge integrated circuits.

Epitaxial growth of CdTe films on GaAs-buffered (001) Si substrates by metal organic chemical vapor deposition

2012 ◽  
Vol 87 ◽  
pp. 139-141 ◽  
Author(s):  
Kwang-Chon Kim ◽  
Seung Hyub Baek ◽  
Won Chel Choi ◽  
Hyun Jae Kim ◽  
Jin Dong Song ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Epitaxial Growth ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Organic Chemical ◽  
Si Substrates ◽  
Metal Organic ◽  
Cdte Films ◽  
Organic Chemical Vapor Deposition

NH3as a photosensitizer in the epitaxial growth of Ge on GaAs by laser photochemical vapor deposition

1989 ◽  
Vol 55 (1) ◽  
pp. 65-67 ◽  
Author(s):  
C. J. Kiely ◽  
V. Tavitian ◽  
C. Jones ◽  
J. G. Eden
Keyword(s):  
Epitaxial Growth ◽  
Vapor Deposition ◽  
Photochemical Vapor Deposition
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