Measurements of Enhanced Oxygen Diffusion in Silicon During Thermal Donor Formation: New Evidence for Possible Mechanisms

1989 ◽  
Vol 163 ◽  
Author(s):  
A.R. Brown ◽  
R. Murray ◽  
R.C. Newman ◽  
J.H. Tucker
Keyword(s):  
Oxygen Diffusion ◽  
Diffusion Rate ◽  
Oxygen Loss ◽  
Enhanced Diffusion ◽  
Czochralski Silicon ◽  
Thermal Donor ◽  
Annealed Material ◽  
Primary Mechanism ◽  
Donor Formation ◽  
New Evidence

AbstractCzochralski silicon has been heated in a H-plasma at temperatures in the range 300-450°C, and compared with furnace annealed material. Plasma treatments produce enhanced rates of oxygen diffusion jumps, loss of oxygen from solution and formation of thermal donor centres. The available evidence indicates that atomic hydrogen catalyses the enhancements via the oxygen diffusion rate. Donor concentrations greater than 1017cm-3 have been observed in samples heated in a plasma at 350°C. Doubts have been raised about dimer formation being the primary mechanism for oxygen loss in furnace anneals at 350°C, but invoking enhanced diffusion leads to a conflict with stress dichroism data.

Oxygen loss during thermal donor formation in Czochralski silicon: New insights into oxygen diffusion mechanisms

1995 ◽  
Vol 77 (4) ◽  
pp. 1427-1442 ◽  
Author(s):  
S. A. McQuaid ◽  
M. J. Binns ◽  
C. A. Londos ◽  
J. H. Tucker ◽  
A. R. Brown ◽  
...  
Keyword(s):  
Oxygen Diffusion ◽  
Oxygen Loss ◽  
Czochralski Silicon ◽  
Thermal Donor ◽  
Donor Formation ◽  
Diffusion Mechanisms

The Kinetics of Oxygen Loss and Thermal Donor Formation in Silicon at Temperatures between 350°C and 500°C

1993 ◽  
Vol 143-147 ◽  
pp. 963-968 ◽  
Author(s):  
S.A. McQuaid ◽  
Charalamos A. Londos ◽  
M.J. Binns ◽  
R.C. Newman ◽  
J.H. Tucker
Keyword(s):  
Oxygen Loss ◽  
Thermal Donor ◽  
Donor Formation ◽  
Kinetics Of

Low-Temperature Doping of P-Type Czochralski Silicon due to Hydrogen Plasma Enhanced Thermal Donor Formation

1997 ◽  
Vol 57-58 ◽  
pp. 189-196 ◽  
Author(s):  
Alexander G. Ulyashin ◽  
Yu.A. Bumay ◽  
Reinhart Job ◽  
G. Grabosch ◽  
D. Borchert ◽  
...  
Keyword(s):  
Low Temperature ◽  
Hydrogen Plasma ◽  
Czochralski Silicon ◽  
Thermal Donor ◽  
Donor Formation ◽  
P Type

Kinetic Model of Thermal Donor Evolution

1997 ◽  
Vol 469 ◽  
Author(s):  
K. F. Kelton ◽  
R. Falster
Keyword(s):  
Interstitial Oxygen ◽  
Oxygen Loss ◽  
Free Oxygen ◽  
Czochralski Silicon ◽  
Thermal Donor ◽  
Cluster Evolution ◽  
Oxygen Precipitation ◽  
High Diffusion Rate ◽  
Normal Diffusion ◽  
Small Clusters

ABSTRACTKinetic aspects of thermal donor (TD) formation in Czochralski silicon are shown to be consistent with the evolution of small oxygen clusters, as described within the classical theory of nucleation. Predictions for TD generation and interstitial oxygen loss are presented. Favorable agreement with experimental data requires that the rate constants describing cluster evolution be increased over those expected for a oliffusion-limited flux based on a normal diffusion coefficient for oxygen in silicon. This may signal an anomalously high diffusion rate for temperatures less than 500°C, as has been suggested by others. However, it may instead signal an enhanced concentration of free oxygen near clusters smaller than the critical size for nucleation. This is expected when the interfacial attachment rates become comparable with the rates at which oxygen atoms arrive in the vicinity of the sub-critical clusters. The link between thermal donor generation and oxygen precipitation processes demonstrated here provides a consistent framework for better understanding and controlling oxygen precipitation in silicon. Further, the kinetic TD generation and oxygen loss data provide a new window into the dynamical processes for small clusters, which underlie all nucleation phenomena.

Thermal donor formation in electron‐irradiated Czochralski silicon

1986 ◽  
Vol 49 (21) ◽  
pp. 1435-1437 ◽  
Author(s):  
Johan Svensson ◽  
Bengt G. Svensson ◽  
J. Lennart Lindström
Keyword(s):  
Czochralski Silicon ◽  
Thermal Donor ◽  
Donor Formation

Oxygen-Related Thermal Donor Formation in Dopant-Rich Compensated Czochralski Silicon

2014 ◽  
Vol 61 (5) ◽  
pp. 1241-1245 ◽  
Author(s):  
Florent Tanay ◽  
Sebastien Dubois ◽  
Jordi Veirman ◽  
Nicolas Enjalbert ◽  
Julie Stendera ◽  
...  
Keyword(s):  
Czochralski Silicon ◽  
Thermal Donor ◽  
Donor Formation

Oxygen Gettering and Thermal Donor Formation at Post-Implantation Annealing of Hydrogen Implanted Czochralski Silicon

1997 ◽  
Vol 469 ◽  
Author(s):  
A. G. Ulyashin ◽  
Yu. A. Bumay ◽  
W. R. Fahrner ◽  
A. I. Ivanovo ◽  
R. Job ◽  
...  
Keyword(s):  
Secondary Ion Mass Spectrometry ◽  
Hydrogen Ions ◽  
Enhanced Diffusion ◽  
Thermal Donor ◽  
Float Zone ◽  
Donor Formation ◽  
Effect Of Oxygen ◽  
P Type ◽  
Secondary Ion ◽  
Post Implantation

ABSTRACTThe effect of oxygen gettering by buried defect layers at post-implantation annealing of hydrogen implanted Czochralski (Cz) grown silicon has been investigated. Hydrogen ions were implanted with an energy of 180 keV and doses of 2.7.1016cm−2 into p-type Cz and for comparison into p-type float zone (Fz) Si. The samples were annealed at temperatures between 400 °C and 1200 °C in a forming gas ambient and examined by secondary ion mass spectrometry (SIMS) in order to measure the hydrogen and oxygen concentration profiles. Spreading resistance probe (SRP) measurements were used to obtain depth resolved profiles of the resistivity. The observed changes of the resistivity after post-implantation annealing of hydrogen implanted Cz and Fz Si can be explained by hydrogen enhanced thermal donor formation processes (oxygen or hydrogen related) and charges at the SiOx precipitates. The effective oxygen gettering in hydrogen implanted Cz silicon is attributed to hydrogen enhanced diffusion of oxygen to buried defect layers.

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