Surface‐energy‐driven secondary grain growth in thin Au films

1986 ◽  
Vol 48 (5) ◽  
pp. 335-337 ◽  
Author(s):  
Chee C. Wong ◽  
Henry I. Smith ◽  
C. V. Thompson
Keyword(s):  
Surface Energy ◽  
Grain Growth

Effects of Surface Energy on the Microstructures of Thin Sb Films

1990 ◽  
Vol 202 ◽  
Author(s):  
L. H. Chou ◽  
M. C. Kuo
Keyword(s):  
Electron Microscopy ◽  
Surface Energy ◽  
Grain Growth ◽  
Grain Orientation ◽  
Thermal Evaporation ◽  
X Ray Diffraction ◽  
X Ray ◽  
Glass Substrates ◽  
Transmission Electron ◽  
Diffraction Peaks

ABSTRACTThin Sb films have been prepared on glass substrates by rapid thermal evaporation. Films with thicknesses varied from 260 Å to 1300Å were used for the study. X-ray diffraction data showed that for films deposited at room substrate temperature, an almost random grain orientation was observed for films of 1300 Å thick and a tendency for preferred grain orientation was observed as films got thinner. For films of 260 Å thick, only two x-ray diffraction peaks--(003) and (006) were observed. After thermal annealing, secondary grains grew to show preferred orientation in all the films. This phenomenon was explained by surface-energy-driven secondary grain growth. This paper reports the effects of annealing time and film thickness on the secondary grain growth and the evolution of thin Sb film microstmctures. Transmission electron microscopy (TEM) and x-ray diffraction were used to characterize the films.

Graphoepitaxy of Ge on SiO2by solid‐state surface‐energy‐driven grain growth

1984 ◽  
Vol 45 (6) ◽  
pp. 631-633 ◽  
Author(s):  
T. Yonehara ◽  
Henry I. Smith ◽  
C. V. Thompson ◽  
J. E. Palmer
Keyword(s):  
Solid State ◽  
Surface Energy ◽  
Grain Growth

Surface Segregation of Sulfur and Its Effect on Surface-Energy-Induced Selective Grain Growth in Magnetostrictive Fe-Ga-B Alloy

2008 ◽  
Author(s):  
Suok-Min Na ◽  
Alison B. Flatau
Keyword(s):  
Surface Energy ◽  
Grain Growth ◽  
Photoelectron Spectroscopy ◽  
Electron Spectroscopy ◽  
Surface Segregation ◽  
Iron Sulfide ◽  
Rolling Direction ◽  
X Ray ◽  
Sulfur Atmosphere ◽  
Xrd Patterns

The surface-energy-induced selective grain growth with a specific plane can be governed in polycrystalline Fe-Ga-B alloys doped with sulfur. The segregated sulfur during texture annealing played an important role in controlling the surface energy to induce the selective growth of {100} or {110} grains, corresponding to maximum magnetostrictive performance, along <001> orientation with respect to rolling direction. The results show that sulfur diffuses (adsorbs) from bulk interior (sulfur atmosphere) then segregates on the surface. The amount of segregated sulfur increases with an increase of annealing time at the temperature of 1200°C. Auger electron spectroscopy (AES) and X-ray photoelectron spectroscopy (XPS) data on the surface as well as selective development of {100}<001> and {110}<001> preferred textures are presented in this work. The XPS fitted peaks of S 2p3/2 at binding energy of 161.2 and 163.2 eV for annealed Fe-Ga-B doped with sulfur represent the presence of stoichiometric FeS and FeSn (polysulfide), respectively. For all of the sulfur-free Fe-Ga-B sheets annealed in the ampoule with sulfur element, XPS indicated contributions centered at approximately 161.7 (S 2p) that has been assigned to iron sulfide as well. The presence of FeS was clearly confirmed by XRD patterns and XPS fitted peak positions at 161.5 eV (S 2p3/2) and 710.2 eV (Fe 2p3/2). The segregation of sulfur and boron during annealing were also confirmed by AES depth profile results, which exhibited peak concentrations of 10 at.%S and 20 at.%B at the surface, respectively. The peak magnetostriction of 201 ppm was obtained at annealed (Fe81.3Ga18.7)99B1 alloy with near {100}<001> orientation under sulfur atmosphere containing the amounts of 6.4 mg S. On the other hand, the texture of sulfur-free Fe-Ga-B alloy was close to {110}<001> after annealing at 1200°C for 6h under flowing argon, corresponding to the magnetostriction of 160 ppm.

scholarly journals Surface Energy Driven Cubic-to-Hexagonal Grain Growth of Ge2Sb2Te5 Thin Film

2017 ◽  
Vol 7 (1) ◽  
Author(s):  
Yonghui Zheng ◽  
Yan Cheng ◽  
Rong Huang ◽  
Ruijuan Qi ◽  
Feng Rao ◽  
...  
Keyword(s):  
Thin Film ◽  
Surface Energy ◽  
Grain Growth

Secondary Grain Growth and Graphoepitaxy in thin Au films on Submicrometer-Period Gratings

1985 ◽  
Vol 47 ◽  
Author(s):  
Chee C. Wong ◽  
Henry I. Smith ◽  
C. V. Thompson
Keyword(s):  
Surface Energy ◽  
Grain Growth ◽  
Room Temperature ◽  
Surface Patterning ◽  
Wave Profile ◽  
Periodic Surface ◽  
Crystalline Films ◽  
Artificial Surface ◽  
Energy Anisotropy ◽  
Oriented Parallel

ABSTRACTSecondary grain growth in thin Au films on SiO2 substrates with periodic surface relief structures was studied as a model for the application of graphoepitaxy (the growth of orientated crystalline films through the use of artificial surface patterning). Secondary grain growth driven by sur-face energy anisotropy produces grains many times larger than the film thickness with uniform texture. In thin films of Au on SiO2, surface-energy- driven secondary grain growth was found to occur at room temperature as soon as the film becomes continuous, and was shown to be responsible for the {111} deposition texture. A square-wave-profile grating of 0.2 μm period, etched into the surface of the substrate, resulted in preferred growth of {111}-textured grains with <112> directions oriented parallel to the grating axis. It is proposed that surface energy minimization is responsible for this phenomenon.

Competition between strain and interface energy during epitaxial grain growth in Ag films on Ni(001)

1994 ◽  
Vol 9 (9) ◽  
pp. 2411-2424 ◽  
Author(s):  
J.A. Floro ◽  
C.V. Thompson ◽  
R. Carel ◽  
P.D. Bristowe
Keyword(s):  
Surface Energy ◽  
Grain Growth ◽  
Interfacial Energy ◽  
Elastic Anisotropy ◽  
Interface Energy ◽  
Orientation Dependence ◽  
Embedded Atom ◽  
Strain Energy Minimization ◽  
Film Substrate ◽  
Epitaxial Grain Growth

Epitaxial Grain Growth (EGG) is an orientation-selective process that can occur in polycrystalline thin films on single crystal substrates. EGG is driven by minimization of crystallographically anisotropic free energies. One common driving force for EGG is the reduction of the film/substrate interfacial energy. We have carried out experiments on polycrystalline Ag films on Ni(001) substrates. The orientation dependence of the Ag/Ni interfacial energy has been previously calculated using the embedded atom method. Under some conditions, EGG experiments lead to the (111) orientations calculated to be interface- and surface-energy-minimizing. However, when Ag films are deposited on Ni(001) at low temperature, EGG experiments consistently find that (111) oriented grains are consumed by grains with (001) orientations predicted to have much higher interface and surface energy. The large elastic anisotropy of Ag can account for this discrepancy. Strain energy minimization favors growth of (001) grains and can supersede minimization of interfacial energy if sufficient strain is present and if the film is initially unable to relieve the strain by plastic deformation.

Control of Grain Boundary Microstructures in Sputtered Gold Thin Films by Surface Energy-Driven Grain Growth

2012 ◽  
Vol 706-709 ◽  
pp. 2880-2885 ◽  
Author(s):  
Shigeaki Kobayashi ◽  
Ryouta Fukasawa ◽  
Tadao Watanabe
Keyword(s):  
Thin Films ◽  
Surface Energy ◽  
Grain Boundary ◽  
Grain Growth ◽  
High Performance ◽  
Coincidence Site Lattice ◽  
Grain Boundary Engineering ◽  
High Fraction ◽  
Percolation Phenomena ◽  
Gold Thin Films

The evolution of grain boundary microstructures in gold thin films during annealing was investigated in order to find a clue to the development of high performance thin films by grain boundary engineering. The {111} oriented grains with the lowest surface energy were preferentially grown by surface energy-driven grain growth during annealing. The sharp {111} texture was developed by annealing at the temperature more than 873K. The remarkably high fraction of low-Σ coincidence site lattice (CSL) boundaries occurred when the area fraction of {111} texture increased to more than 95%. In particular, the fraction of some low-Σ CSL boundaries (Σ1,Σ3,Σ7) for the most sharply {111} textured specimen was found to be one order higher than those predicted for a random polycrystal. The utility of grain boundary engineering is discussed for controlling the performance degradation caused by the percolation phenomena of grain boundary diffusion in gold thin films.

The Effects of Dopants on Surface-Energy-Driven Secondary Grain Growth in Ultrathin Si Films

1985 ◽  
Vol 54 ◽  
Author(s):  
H.-J. Kim ◽  
C. V. Thompson
Keyword(s):  
Surface Energy ◽  
Grain Growth ◽  
Ultrathin Films ◽  
Abnormal Grain Growth ◽  
Growth Enhancement ◽  
Grain Boundary Mobility ◽  
Additional Doping ◽  
Heavily Doped ◽  
Si Films ◽  
P Type

ABSTRACTSecondary or abnormal grain growth has been observed in ultrathin films of silicon (<120nm) that were heavily doped with phosphorous or arsenic. This grain growth leads to grains which are much larger than the film thickness (>50x) and which have uniform (111) texture. This abnormal grain growth is believed to be driven, in part, by surface energy minimization and hence is termed surface-energy-driven secondary grain growth.It was found that n-type dopants, phosphorous and arsenic, markedly enhance the rate of secondary grain growth as seen through a lowering of the temperature required for significant growth. On the other hand, boron (a p-type dopant) appears to neither markedly increase nor decrease the rate of grain growth. Enhancement caused by phosphorous or arsenic is thought to stem from increases in the mobility of the grain boundaries. Enhancement of grain boundary mobility was found to be compensated (reduced or eliminated) by additional doping with boron.

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