Secondary Grain Growth and Graphoepitaxy in thin Au films on Submicrometer-Period Gratings

1985 ◽  
Vol 47 ◽  
Author(s):  
Chee C. Wong ◽  
Henry I. Smith ◽  
C. V. Thompson
Keyword(s):  
Surface Energy ◽  
Grain Growth ◽  
Room Temperature ◽  
Surface Patterning ◽  
Wave Profile ◽  
Periodic Surface ◽  
Crystalline Films ◽  
Artificial Surface ◽  
Energy Anisotropy ◽  
Oriented Parallel

ABSTRACTSecondary grain growth in thin Au films on SiO2 substrates with periodic surface relief structures was studied as a model for the application of graphoepitaxy (the growth of orientated crystalline films through the use of artificial surface patterning). Secondary grain growth driven by sur-face energy anisotropy produces grains many times larger than the film thickness with uniform texture. In thin films of Au on SiO2, surface-energy- driven secondary grain growth was found to occur at room temperature as soon as the film becomes continuous, and was shown to be responsible for the {111} deposition texture. A square-wave-profile grating of 0.2 μm period, etched into the surface of the substrate, resulted in preferred growth of {111}-textured grains with <112> directions oriented parallel to the grating axis. It is proposed that surface energy minimization is responsible for this phenomenon.

Crystalline Films on Amorphous Substrates by Zone Melting and Surface-Energy-Driven Grain Growth in Conjunction with Patferning

1985 ◽  
Vol 53 ◽  
Author(s):  
Henry I. Smith ◽  
M. W. Geis ◽  
C. V. Thompson ◽  
C. K. Chen
Keyword(s):  
Low Temperature ◽  
Surface Energy ◽  
Grain Boundaries ◽  
Grain Growth ◽  
High Temperatures ◽  
Zone Melting ◽  
Si Substrates ◽  
Crystalline Films ◽  
Amorphous Substrates ◽  
Si Films

ABSTRACTTwo approaches to preparing oriented crystalline films on amorphous substrates are reviewed briefly: zone-melting recrystallization (ZMR) and surface-energy-driven grain growth (SEDGG). In both approaches patterning can be employed either to establish orientation or to control the location of defects. ZMR has been highly successful for the growth of Si films on oxidized Si substrates, but its applicability is limited by the high temperatures required. SEDGG has been investigated as a potentially universal, low temperature approach. It has been demonstrated in Si, Ge, and Au. Surface gratings favor the growth of grains with a specific in-plane orientation. In order for SEDGG to be of broad practical value, the mobility of semiconductor grain boundaries must be increased substantially. Mobility enhancement has been achieved via doping and ion bombardment.

scholarly journals In Situ Grain Growth of Nanograined Magnetite under Ion Irradiation at Room Temperature and 500 ℃

2021 ◽  
Vol 27 (S1) ◽  
pp. 2640-2643
Author(s):  
Chris McRobie ◽  
Ryan Schoell ◽  
Tiffany Kaspar ◽  
Daniel Schreiber ◽  
Djamel Kaoumi
Keyword(s):  
Grain Growth ◽  
Room Temperature ◽  
Ion Irradiation

scholarly journals Mean Field Analysis of Orientation Selective Grain Growth Driven By Interface-Energy Anisotropy

1994 ◽  
Vol 343 ◽  
Author(s):  
J. A. Floro ◽  
C. V. Thompson
Keyword(s):  
Grain Size ◽  
Size Distribution ◽  
Grain Growth ◽  
Texture Evolution ◽  
Mean Field ◽  
Orientation Distribution ◽  
Interface Energy ◽  
Abnormal Grain Growth ◽  
Field Analysis ◽  
Energy Anisotropy

ABSTRACTAbnormal grain growth is characterized by the lack of a steady state grain size distribution. In extreme cases the size distribution becomes transiently bimodal, with a few grains growing much larger than the average size. This is known as secondary grain growth. In polycrystalline thin films, the surface energy γs and film/substrate interfacial energy γi vary with grain orientation, providing an orientation-selective driving force that can lead to abnormal grain growth. We employ a mean field analysis that incorporates the effect of interface energy anisotropy to predict the evolution of the grain size/orientation distribution. While abnormal grain growth and texture evolution always result when interface energy anisotropy is present, whether secondary grain growth occurs will depend sensitively on the details of the orientation dependence of γi.

scholarly journals Radiation Tolerance in Nano-Structured Crystalline Fe(Cr)/Amorphous SiOC Composite

Crystals ◽  
2019 ◽  
Vol 9 (3) ◽  
pp. 147
Author(s):  
Qing Su ◽  
Tianyao Wang ◽  
Lin Shao ◽  
Michael Nastasi
Keyword(s):  
Amorphous Silicon ◽  
Grain Growth ◽  
Irradiation Dose ◽  
Room Temperature ◽  
Silicon Oxycarbide ◽  
Radiation Response ◽  
Radiation Tolerance ◽  
Width Direction ◽  
Cr Film ◽  
Radiation Tolerant

The management of irradiation defects is one of key challenges for structural materials in current and future reactor systems. To develop radiation tolerant alloys for service in extreme irradiation environments, the Fe self-ion radiation response of nanocomposites composed of amorphous silicon oxycarbide (SiOC) and crystalline Fe(Cr) were examined at 10, 20, and 50 displacements per atom damage levels. Grain growth in width direction was observed to increase with increasing irradiation dose in both Fe(Cr) films and Fe(Cr) layers in the nanocomposite after irradiation at room temperature. However, compared to the Fe(Cr) film, the Fe(Cr) layers in the nanocomposite exhibited ~50% less grain growth at the same damage levels, suggesting that interfaces in the nanocomposite were defect sinks. Moreover, the addition of Cr to α-Fe was shown to suppress its grain growth under irradiation for both the composite and non-composite case, consistent with earlier molecular dynamic (MD) modeling studies.

The effect of an electric field on the surface energy anisotropy in alkali metal alloys

2001 ◽  
Vol 27 (10) ◽  
pp. 886-888
Author(s):  
V. Z. Kanchukoev ◽  
A. Z. Kashezhev ◽  
A. Kh. Mambetov ◽  
V. A. Sozaev
Keyword(s):  
Surface Energy ◽  
Alkali Metal ◽  
Electric Field ◽  
Metal Alloys ◽  
Surface Energy Anisotropy ◽  
Energy Anisotropy

Characterization of the order-annealing response of nanostructured iron-palladium based ferromagnetic thin-films

2001 ◽  
Vol 703 ◽  
Author(s):  
Huiping Xu ◽  
Adam T. Wise ◽  
Timothy J. Klemmer ◽  
Jörg M. K. Wiezorek
Keyword(s):  
Thin Films ◽  
Grain Growth ◽  
Room Temperature ◽  
Si Substrate ◽  
Ferromagnetic Thin Films ◽  
Precipitation Reactions ◽  
Post Deposition ◽  
Xrd And Tem ◽  
Iron Palladium

ABSTRACTA combination of XRD and TEM techniques have been used to characterize the response of room temperature magnetron sputtered Fe-Pd thin films on Si-susbtrates to post-deposition order-annealing at temperatures between 400-500°C. Deposition produced the disordered Fe-Pd phase with (111)-twinned grains approximately 18nm in size. Ordering occurred for annealing at 450°C and 500°C after 1.8ks, accompanied by grain growth (40-70nm). The ordered FePd grains contained (111)-twins rather than {101}-twins typical of bulk ordered FePd. The metallic overlayers and underlayers selected here produced detrimental dissolution (Pt into Fe-Pd phases) and precipitation reactions between Pd and the Si substrate.

Microstructure Evolution of a Fine Grain Al-50wt%Si Alloy Fabricated by High Energy Milling

2011 ◽  
Vol 479 ◽  
pp. 54-61 ◽  
Author(s):  
Fei Wang ◽  
Ya Ping Wang
Keyword(s):  
Grain Growth ◽  
Microstructure Evolution ◽  
Room Temperature ◽  
Milling Time ◽  
High Energy ◽  
X Ray Diffraction ◽  
Scanning Calorimetry ◽  
Laser Method ◽  
X Ray ◽  
Fine Grain

Microstructure evolution of high energy milled Al-50wt%Si alloy during heat treatment at different temperature was studied. Scanning electron microscope (SEM) and X-ray diffraction (XRD) results show that the size of the alloy powders decreased with increasing milling time. The observable coarsening of Si particles was not seen below 730°C in the high energy milled alloy, whereas, for the alloy prepared by mixed Al and Si powders, the grain growth occurred at 660°C. The activation energy for the grain growth of Si particles in the high energy milled alloy was determined as about 244 kJ/mol by the differential scanning calorimetry (DSC) data analysis. The size of Si particles in the hot pressed Al-50wt%Si alloy prepared by high energy milled powders was 5-30 m at 700°C, which was significantly reduced compared to that of the original Si powders. Thermal diffusivity of the hot pressed Al-50wt%Si alloy was 55 mm2/s at room temperature which was obtained by laser method.

The Study of Surface Energy, Electrical Properties and Platelet Adhesion Behavior of a-C/a-CN Films Synthesized by PIII-D

2007 ◽  
Vol 330-332 ◽  
pp. 573-576
Author(s):  
Feng Wen ◽  
Nan Huang ◽  
Hong Sun ◽  
An Sha Zhao ◽  
Jin Wang ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Surface Energy ◽  
Room Temperature ◽  
Platelet Adhesion ◽  
Laser Source ◽  
Adhesion Behavior ◽  
Hall Effects ◽  
Type Semiconductor ◽  
Plasma Immersion Ion Implantation ◽  
Deposited Films

Amorphous carbon (a-C) and carbon nitrogen (a-CN) films were synthesized using plasma immersion ion implantation and deposition (PIII-D) under different N2 flow at room temperature (R.T.). Lifshitz-van der Waals/acid-base approach (LW-AB) was introduced in order to study films’ surface energy deeply. The results showed that the capability of the surface of the film on receive electron changed with N2 flow, which effected platelet adhesion of film strongly. Hall effects tests were employed to characterize the electrical properties of the films. The results showed that the as-deposited films exhibited n-type semiconductor characteristic, and carrier concentration of the films decreased with N2 flow increasing. Raman spectra with 514nm laser-source were employed to analyze the structural of the films.

In situ transmission electron microscope measurements of solid Al-solid Pb and solid Al-liquid Pb surface-energy anisotropy in rapidly solidified Al-5% Pb (by mass)

1987 ◽  
Vol 414 (1847) ◽  
pp. 499-507 ◽  
Keyword(s):  
Electron Microscope ◽  
Melting Point ◽  
Surface Energy ◽  
Transmission Electron Microscope ◽  
Room Temperature ◽  
Transmission Electron ◽  
Increasing Temperature ◽  
Rapidly Solidified ◽  
Al Matrix

Alloys of Al-5% Pb and Al-5% Pb-0.5% Si (by mass) have been manufactured by rapid solidification and then examined by transmission electron microscopy. The rapidly solidified alloy microstructures consist of 5-60 nm Pb particles embedded in an Al matrix. The Pb particles have a cube-cube orientation relation with the Al matrix, and are cub-octahedral in shape, bounded by {100} Al, Pb and {111} Al, Pb facets. The equilibrium Pb particle shape and therefore the anisotropy of solid Al-solid Pb and solid Al-liquid Pb surface energies have been monitored by in situ heating in the transmission electron microscope over the temperature range between room temperature and 550°C. The ani­sotropy of solid Al-solid Pb surface energy is constant between room temperature and the Pb melting point, with a {100} Al, Pb surface energy about 14% greater than the {111} Al, Pb surface energy, in good agreement with geometric near-neighbour bond energy calculations. The {100} AI, Pb facet disappears when the Pb particles melt, and the anisotropy of solid Al-liquid Pb surface energy decreases gradually with increasing temperature above the Pb melting point, until the Pb particles become spherical at about 550°C.

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